Using AFM Related Techniques for the Nanoscale Electrical Characterization of Irradiated Ultrathin Gate Oxides
We used different atomic force microscopy (AFM) related techniques to analyze the electrical properties of ultrathin gate oxides irradiated with heavy ions, gathering information on the size, position, electrical properties, and number of conductive spots generated by the impinging particles. In par...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2007-12, Vol.54 (6), p.1891-1897 |
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| container_title | IEEE transactions on nuclear science |
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| creator | Porti, M. Gerardin, S. Nafria, M. Aymerich, X. Cester, A. Paccagnella, A. |
| description | We used different atomic force microscopy (AFM) related techniques to analyze the electrical properties of ultrathin gate oxides irradiated with heavy ions, gathering information on the size, position, electrical properties, and number of conductive spots generated by the impinging particles. In particular, conductive-AFM (C-AFM), scanning capacitance microscopy (SCM), and Kelvin probe force microscopy (KPFM) have been used to measure at the nanoscale level the electrical conduction, capacitance, and contact potential, respectively, of fresh, irradiated, and electrically stressed MOS capacitors. The electrical properties of the different samples have been compared and the impact of the irradiation analyzed. |
| doi_str_mv | 10.1109/TNS.2007.909483 |
| format | Article |
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In particular, conductive-AFM (C-AFM), scanning capacitance microscopy (SCM), and Kelvin probe force microscopy (KPFM) have been used to measure at the nanoscale level the electrical conduction, capacitance, and contact potential, respectively, of fresh, irradiated, and electrically stressed MOS capacitors. 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(IEEE) 2007</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c352t-13b2ceb2954c4ba6f149ed62a4c4bcdb0522c4eefcc84c946e838210766327b93</citedby><cites>FETCH-LOGICAL-c352t-13b2ceb2954c4ba6f149ed62a4c4bcdb0522c4eefcc84c946e838210766327b93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4395071$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4395071$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Porti, M.</creatorcontrib><creatorcontrib>Gerardin, S.</creatorcontrib><creatorcontrib>Nafria, M.</creatorcontrib><creatorcontrib>Aymerich, X.</creatorcontrib><creatorcontrib>Cester, A.</creatorcontrib><creatorcontrib>Paccagnella, A.</creatorcontrib><title>Using AFM Related Techniques for the Nanoscale Electrical Characterization of Irradiated Ultrathin Gate Oxides</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>We used different atomic force microscopy (AFM) related techniques to analyze the electrical properties of ultrathin gate oxides irradiated with heavy ions, gathering information on the size, position, electrical properties, and number of conductive spots generated by the impinging particles. 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The electrical properties of the different samples have been compared and the impact of the irradiation analyzed.</description><subject>AFM</subject><subject>Atomic force microscopy</subject><subject>C-AFM</subject><subject>Capacitance</subject><subject>Capacitance measurement</subject><subject>Conductivity measurement</subject><subject>Electric variables measurement</subject><subject>Electrical properties</subject><subject>Force measurement</subject><subject>Gates</subject><subject>Information analysis</subject><subject>Irradiation</subject><subject>Kelvin</subject><subject>KPFM</subject><subject>Microscopy</subject><subject>Nanomaterials</subject><subject>Nanostructure</subject><subject>Particle measurements</subject><subject>Probes</subject><subject>radiation effects</subject><subject>SCM</subject><subject>Stress measurement</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kb1PwzAQxS0EEqUwM7BYDIglxZ9JPFYVFCQ-JGhny3Eu1CgkxXYl4K_HoYiBgenuSb93p6eH0DElE0qJuljcP00YIcVEESVKvoNGVMoyo7Iod9GIEFpmSii1jw5CeElSSCJHqFsG1z3j6dUdfoTWRKjxAuyqc28bCLjpPY4rwPem64M1LeDLFmz0Lu14tjLe2AjefZro-g73Db7x3tTu-8yyjd7ElevwPGn88O5qCIdorzFtgKOfOUbLq8vF7Dq7fZjfzKa3meWSxYzyilmomJLCisrkDRUK6pyZQdq6IpIxKwAaa0thlcih5CWjpMhzzopK8TE6295d-35IEvWrCxba1nTQb4LmQjKVF2UCz_8FaV5QLokiIqGnf9CXfuO7FEMrymjBaD5AF1vI-j4ED41ee_dq_IemRA896dSTHnrS256S42TrcADwSwuuJEmvvwBfbI5L</recordid><startdate>20071201</startdate><enddate>20071201</enddate><creator>Porti, M.</creator><creator>Gerardin, S.</creator><creator>Nafria, M.</creator><creator>Aymerich, X.</creator><creator>Cester, A.</creator><creator>Paccagnella, A.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Porti, M.</creatorcontrib><creatorcontrib>Gerardin, S.</creatorcontrib><creatorcontrib>Nafria, M.</creatorcontrib><creatorcontrib>Aymerich, X.</creatorcontrib><creatorcontrib>Cester, A.</creatorcontrib><creatorcontrib>Paccagnella, A.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Bacteriology Abstracts (Microbiology B)</collection><collection>Ceramic Abstracts</collection><collection>Computer and Information Systems Abstracts</collection><collection>Corrosion Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials 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Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Algology Mycology and Protozoology Abstracts (Microbiology C)</collection><collection>Biotechnology and BioEngineering Abstracts</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Porti, M.</au><au>Gerardin, S.</au><au>Nafria, M.</au><au>Aymerich, X.</au><au>Cester, A.</au><au>Paccagnella, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Using AFM Related Techniques for the Nanoscale Electrical Characterization of Irradiated Ultrathin Gate Oxides</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>2007-12-01</date><risdate>2007</risdate><volume>54</volume><issue>6</issue><spage>1891</spage><epage>1897</epage><pages>1891-1897</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>We used different atomic force microscopy (AFM) related techniques to analyze the electrical properties of ultrathin gate oxides irradiated with heavy ions, gathering information on the size, position, electrical properties, and number of conductive spots generated by the impinging particles. In particular, conductive-AFM (C-AFM), scanning capacitance microscopy (SCM), and Kelvin probe force microscopy (KPFM) have been used to measure at the nanoscale level the electrical conduction, capacitance, and contact potential, respectively, of fresh, irradiated, and electrically stressed MOS capacitors. The electrical properties of the different samples have been compared and the impact of the irradiation analyzed.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TNS.2007.909483</doi><tpages>7</tpages></addata></record> |
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| subjects | AFM Atomic force microscopy C-AFM Capacitance Capacitance measurement Conductivity measurement Electric variables measurement Electrical properties Force measurement Gates Information analysis Irradiation Kelvin KPFM Microscopy Nanomaterials Nanostructure Particle measurements Probes radiation effects SCM Stress measurement |
| title | Using AFM Related Techniques for the Nanoscale Electrical Characterization of Irradiated Ultrathin Gate Oxides |
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