Investigation of Crystal Defects in Lead Zirconate Titanate Films by Thermally Stimulated Current Measurement
Pb(Zr, Ti)O 3 (PZT) ferroelectric thin films have been extensively investigated because of their potential for FeRAM and MEMS device applications. However, realization of high performance devices has not been achieved due to degradation problems for the PZT films, such as fatigue and imprinting. The...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 235 |
|---|---|
| container_issue | |
| container_start_page | 234 |
| container_title | |
| container_volume | |
| creator | Nishida, T. Echizen, M. Takeda, T. Uchiyama, K. Shiosaki, T. |
| description | Pb(Zr, Ti)O 3 (PZT) ferroelectric thin films have been extensively investigated because of their potential for FeRAM and MEMS device applications. However, realization of high performance devices has not been achieved due to degradation problems for the PZT films, such as fatigue and imprinting. The degradation is caused by crystal defects in the films, however, properties of the defects have not yet been sufficiently clarified. We have therefore attempted to investigate crystal defects in PZT films by thermally stimulated current (TSC) measurements. Current peaks due to the defects were detected in the measurements, and the origin of the observed defects was identified by systematic evaluation. It was revealed that the activation energy of the TSC peaks ranged from 0.75 eV to 0.95 eV, and the peaks were related to PbOx defects at the interface between the electrodes and the PZT layer. |
| doi_str_mv | 10.1109/ISAF.2007.4393225 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4393225</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4393225</ieee_id><sourcerecordid>4393225</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-fc3274abf030443ee425d7d7889a737a4964d11302ae6d75cfbd85a2038e66773</originalsourceid><addsrcrecordid>eNo1kMtOwzAURM1Loi39AMTGP5Bi-97EzrIKLVQqYtGyYVO5yQ0YJSmyXaT8PRGU1RxppCPNMHYrxUxKkd-vNvPlTAmhZwg5KJWesWmujUSFKAHQnLORAp0mAtFcsPF_AeaSjQZBnqAGvGbjED6FGEQZjli76r4pRPduozt0_FDzwvch2oY_UE1lDNx1fE224m_Ol4fORuJbF-0vLF3TBr7v-faDfGubpueb6NpjM5QVL47eUxf5M9lw9NQOfMOuatsEmp5ywl6Xi23xlKxfHlfFfJ04qdOY1CUojXZfCxi2ABGqtNKVNia3GrTFPMNKShDKUlbptKz3lUmtEmAoy7SGCbv78zoi2n1511rf7063wQ-g912r</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Investigation of Crystal Defects in Lead Zirconate Titanate Films by Thermally Stimulated Current Measurement</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Nishida, T. ; Echizen, M. ; Takeda, T. ; Uchiyama, K. ; Shiosaki, T.</creator><creatorcontrib>Nishida, T. ; Echizen, M. ; Takeda, T. ; Uchiyama, K. ; Shiosaki, T.</creatorcontrib><description>Pb(Zr, Ti)O 3 (PZT) ferroelectric thin films have been extensively investigated because of their potential for FeRAM and MEMS device applications. However, realization of high performance devices has not been achieved due to degradation problems for the PZT films, such as fatigue and imprinting. The degradation is caused by crystal defects in the films, however, properties of the defects have not yet been sufficiently clarified. We have therefore attempted to investigate crystal defects in PZT films by thermally stimulated current (TSC) measurements. Current peaks due to the defects were detected in the measurements, and the origin of the observed defects was identified by systematic evaluation. It was revealed that the activation energy of the TSC peaks ranged from 0.75 eV to 0.95 eV, and the peaks were related to PbOx defects at the interface between the electrodes and the PZT layer.</description><identifier>ISSN: 1099-4734</identifier><identifier>ISBN: 1424413338</identifier><identifier>ISBN: 9781424413331</identifier><identifier>EISSN: 2375-0448</identifier><identifier>EISBN: 9781424413348</identifier><identifier>EISBN: 1424413346</identifier><identifier>DOI: 10.1109/ISAF.2007.4393225</identifier><language>eng</language><publisher>IEEE</publisher><subject>Current measurement ; Ferroelectric films ; Ferroelectric materials ; Lead ; Microelectromechanical devices ; Nonvolatile memory ; Random access memory ; Thermal degradation ; Thin film devices ; Titanium compounds</subject><ispartof>2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics, 2007, p.234-235</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4393225$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2057,27924,54919</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4393225$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Nishida, T.</creatorcontrib><creatorcontrib>Echizen, M.</creatorcontrib><creatorcontrib>Takeda, T.</creatorcontrib><creatorcontrib>Uchiyama, K.</creatorcontrib><creatorcontrib>Shiosaki, T.</creatorcontrib><title>Investigation of Crystal Defects in Lead Zirconate Titanate Films by Thermally Stimulated Current Measurement</title><title>2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics</title><addtitle>ISAF</addtitle><description>Pb(Zr, Ti)O 3 (PZT) ferroelectric thin films have been extensively investigated because of their potential for FeRAM and MEMS device applications. However, realization of high performance devices has not been achieved due to degradation problems for the PZT films, such as fatigue and imprinting. The degradation is caused by crystal defects in the films, however, properties of the defects have not yet been sufficiently clarified. We have therefore attempted to investigate crystal defects in PZT films by thermally stimulated current (TSC) measurements. Current peaks due to the defects were detected in the measurements, and the origin of the observed defects was identified by systematic evaluation. It was revealed that the activation energy of the TSC peaks ranged from 0.75 eV to 0.95 eV, and the peaks were related to PbOx defects at the interface between the electrodes and the PZT layer.</description><subject>Current measurement</subject><subject>Ferroelectric films</subject><subject>Ferroelectric materials</subject><subject>Lead</subject><subject>Microelectromechanical devices</subject><subject>Nonvolatile memory</subject><subject>Random access memory</subject><subject>Thermal degradation</subject><subject>Thin film devices</subject><subject>Titanium compounds</subject><issn>1099-4734</issn><issn>2375-0448</issn><isbn>1424413338</isbn><isbn>9781424413331</isbn><isbn>9781424413348</isbn><isbn>1424413346</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1kMtOwzAURM1Loi39AMTGP5Bi-97EzrIKLVQqYtGyYVO5yQ0YJSmyXaT8PRGU1RxppCPNMHYrxUxKkd-vNvPlTAmhZwg5KJWesWmujUSFKAHQnLORAp0mAtFcsPF_AeaSjQZBnqAGvGbjED6FGEQZjli76r4pRPduozt0_FDzwvch2oY_UE1lDNx1fE224m_Ol4fORuJbF-0vLF3TBr7v-faDfGubpueb6NpjM5QVL47eUxf5M9lw9NQOfMOuatsEmp5ywl6Xi23xlKxfHlfFfJ04qdOY1CUojXZfCxi2ABGqtNKVNia3GrTFPMNKShDKUlbptKz3lUmtEmAoy7SGCbv78zoi2n1511rf7063wQ-g912r</recordid><startdate>200705</startdate><enddate>200705</enddate><creator>Nishida, T.</creator><creator>Echizen, M.</creator><creator>Takeda, T.</creator><creator>Uchiyama, K.</creator><creator>Shiosaki, T.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200705</creationdate><title>Investigation of Crystal Defects in Lead Zirconate Titanate Films by Thermally Stimulated Current Measurement</title><author>Nishida, T. ; Echizen, M. ; Takeda, T. ; Uchiyama, K. ; Shiosaki, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-fc3274abf030443ee425d7d7889a737a4964d11302ae6d75cfbd85a2038e66773</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Current measurement</topic><topic>Ferroelectric films</topic><topic>Ferroelectric materials</topic><topic>Lead</topic><topic>Microelectromechanical devices</topic><topic>Nonvolatile memory</topic><topic>Random access memory</topic><topic>Thermal degradation</topic><topic>Thin film devices</topic><topic>Titanium compounds</topic><toplevel>online_resources</toplevel><creatorcontrib>Nishida, T.</creatorcontrib><creatorcontrib>Echizen, M.</creatorcontrib><creatorcontrib>Takeda, T.</creatorcontrib><creatorcontrib>Uchiyama, K.</creatorcontrib><creatorcontrib>Shiosaki, T.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nishida, T.</au><au>Echizen, M.</au><au>Takeda, T.</au><au>Uchiyama, K.</au><au>Shiosaki, T.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Investigation of Crystal Defects in Lead Zirconate Titanate Films by Thermally Stimulated Current Measurement</atitle><btitle>2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics</btitle><stitle>ISAF</stitle><date>2007-05</date><risdate>2007</risdate><spage>234</spage><epage>235</epage><pages>234-235</pages><issn>1099-4734</issn><eissn>2375-0448</eissn><isbn>1424413338</isbn><isbn>9781424413331</isbn><eisbn>9781424413348</eisbn><eisbn>1424413346</eisbn><abstract>Pb(Zr, Ti)O 3 (PZT) ferroelectric thin films have been extensively investigated because of their potential for FeRAM and MEMS device applications. However, realization of high performance devices has not been achieved due to degradation problems for the PZT films, such as fatigue and imprinting. The degradation is caused by crystal defects in the films, however, properties of the defects have not yet been sufficiently clarified. We have therefore attempted to investigate crystal defects in PZT films by thermally stimulated current (TSC) measurements. Current peaks due to the defects were detected in the measurements, and the origin of the observed defects was identified by systematic evaluation. It was revealed that the activation energy of the TSC peaks ranged from 0.75 eV to 0.95 eV, and the peaks were related to PbOx defects at the interface between the electrodes and the PZT layer.</abstract><pub>IEEE</pub><doi>10.1109/ISAF.2007.4393225</doi><tpages>2</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1099-4734 |
| ispartof | 2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics, 2007, p.234-235 |
| issn | 1099-4734 2375-0448 |
| language | eng |
| recordid | cdi_ieee_primary_4393225 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Current measurement Ferroelectric films Ferroelectric materials Lead Microelectromechanical devices Nonvolatile memory Random access memory Thermal degradation Thin film devices Titanium compounds |
| title | Investigation of Crystal Defects in Lead Zirconate Titanate Films by Thermally Stimulated Current Measurement |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T15%3A24%3A02IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Investigation%20of%20Crystal%20Defects%20in%20Lead%20Zirconate%20Titanate%20Films%20by%20Thermally%20Stimulated%20Current%20Measurement&rft.btitle=2007%20Sixteenth%20IEEE%20International%20Symposium%20on%20the%20Applications%20of%20Ferroelectrics&rft.au=Nishida,%20T.&rft.date=2007-05&rft.spage=234&rft.epage=235&rft.pages=234-235&rft.issn=1099-4734&rft.eissn=2375-0448&rft.isbn=1424413338&rft.isbn_list=9781424413331&rft_id=info:doi/10.1109/ISAF.2007.4393225&rft_dat=%3Cieee_6IE%3E4393225%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781424413348&rft.eisbn_list=1424413346&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4393225&rfr_iscdi=true |