High-Density 8Mb 1T-1C Ferroelectric Random Access Memory Embedded Within a Low-Power 130nm Logic Process

Ferroelectric memories are the most promising alternative to traditional embedded nonvolatile memories, such as flash and EEPROMs, because of their fast read/write cycle time, non-volatile data retention, low voltage/low power operation and low number of additional masks for fabrication (+2). An emb...

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Bibliographische Detailangaben

Hauptverfasser:	Summerfelt, S.R., Moise, T.S., Udayakumar, K.R., Boku, K., Remack, K., Rodriguez, J., Gertas, J., McAdams, H., Madan, S., Eliason, J., Groat, J., Kim, D., Staubs, P., Depner, M., Bailey, R.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Chemical vapor deposition EPROM Fabrication Ferroelectric films Ferroelectric materials Logic Low voltage Nonvolatile memory Random access memory Read-write memory
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