Method for Estimation of the Channel Temperature of GaN High Electron Mobility Transistors

A quick and reliable method to estimate the channel temperature of GaN high electron mobility transistors is extremely important in order to understand the physical degradation mechanisms as well as to extract a meaningful life time of the device. In this work, we present a simple yet powerful metho...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Jungwoo Joh, Chowdhury, U., Tso-Min Chou, Hua-Quen Tserng, Jimenez, J.L.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Electric variables measurement Electrical resistance measurement Gallium nitride HEMTs Life estimation MODFETs Pulse measurements Temperature measurement Thermal degradation Thermal resistance
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page	101
container_issue
container_start_page	87
container_title
container_volume
creator	Jungwoo Joh Chowdhury, U. Tso-Min Chou Hua-Quen Tserng Jimenez, J.L.
description	A quick and reliable method to estimate the channel temperature of GaN high electron mobility transistors is extremely important in order to understand the physical degradation mechanisms as well as to extract a meaningful life time of the device. In this work, we present a simple yet powerful method to electrically measure the channel temperature of GaN HEMTs with a synchronized pulsed I-V setup. To validate the technique, we extract thermal resistance a) on the same device, multiple times, b) on multiple identical devices on the same wafer, c) on devices with different geometries and d) on identical devices with different level of degradation.
doi_str_mv	10.1109/ROCS.2007.4391064
format	Conference Proceeding
fullrecord	<record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4391064</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4391064</ieee_id><sourcerecordid>4391064</sourcerecordid><originalsourceid>FETCH-LOGICAL-i241t-2b8f6eba34b0b249733ac7922dc0afee2f6dd95a41f5c8ede9a3aae91514f4953</originalsourceid><addsrcrecordid>eNotkM1Kw0AUhQdEUGoeQNzMCyTe-cnPLCXUVmgtaNy4KTfJHTOSJmVmXPTtrdjVWZyPA99h7F5AJgSYx7dd_Z5JgDLTyggo9BVLTFlBaaACIfL8hiUhfAOAMEUJUt-yzy3FYe65nT1fhugOGN088dnyOBCvB5wmGnlDhyN5jD-e_qoVvvK1-xr4cqQu-jO_nVs3unjijccpuBBnH-7YtcUxUHLJBft4Xjb1Ot3sVi_10yZ1UouYyrayBbWodAut1KZUCrvSSNl3gJZI2qLvTY5a2LyrqCeDCpGMyIW22uRqwR7-dx0R7Y_-7OBP-8sD6heZ0lJf</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Method for Estimation of the Channel Temperature of GaN High Electron Mobility Transistors</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Jungwoo Joh ; Chowdhury, U. ; Tso-Min Chou ; Hua-Quen Tserng ; Jimenez, J.L.</creator><creatorcontrib>Jungwoo Joh ; Chowdhury, U. ; Tso-Min Chou ; Hua-Quen Tserng ; Jimenez, J.L.</creatorcontrib><description>A quick and reliable method to estimate the channel temperature of GaN high electron mobility transistors is extremely important in order to understand the physical degradation mechanisms as well as to extract a meaningful life time of the device. In this work, we present a simple yet powerful method to electrically measure the channel temperature of GaN HEMTs with a synchronized pulsed I-V setup. To validate the technique, we extract thermal resistance a) on the same device, multiple times, b) on multiple identical devices on the same wafer, c) on devices with different geometries and d) on identical devices with different level of degradation.</description><identifier>ISBN: 9780790801155</identifier><identifier>ISBN: 0790801159</identifier><identifier>DOI: 10.1109/ROCS.2007.4391064</identifier><language>eng</language><publisher>IEEE</publisher><subject>Electric variables measurement ; Electrical resistance measurement ; Gallium nitride ; HEMTs ; Life estimation ; MODFETs ; Pulse measurements ; Temperature measurement ; Thermal degradation ; Thermal resistance</subject><ispartof>2007 ROCS Workshop[Reliability of Compound Semiconductors Digest], 2007, p.87-101</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4391064$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4391064$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Jungwoo Joh</creatorcontrib><creatorcontrib>Chowdhury, U.</creatorcontrib><creatorcontrib>Tso-Min Chou</creatorcontrib><creatorcontrib>Hua-Quen Tserng</creatorcontrib><creatorcontrib>Jimenez, J.L.</creatorcontrib><title>Method for Estimation of the Channel Temperature of GaN High Electron Mobility Transistors</title><title>2007 ROCS Workshop[Reliability of Compound Semiconductors Digest]</title><addtitle>ROCS</addtitle><description>A quick and reliable method to estimate the channel temperature of GaN high electron mobility transistors is extremely important in order to understand the physical degradation mechanisms as well as to extract a meaningful life time of the device. In this work, we present a simple yet powerful method to electrically measure the channel temperature of GaN HEMTs with a synchronized pulsed I-V setup. To validate the technique, we extract thermal resistance a) on the same device, multiple times, b) on multiple identical devices on the same wafer, c) on devices with different geometries and d) on identical devices with different level of degradation.</description><subject>Electric variables measurement</subject><subject>Electrical resistance measurement</subject><subject>Gallium nitride</subject><subject>HEMTs</subject><subject>Life estimation</subject><subject>MODFETs</subject><subject>Pulse measurements</subject><subject>Temperature measurement</subject><subject>Thermal degradation</subject><subject>Thermal resistance</subject><isbn>9780790801155</isbn><isbn>0790801159</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkM1Kw0AUhQdEUGoeQNzMCyTe-cnPLCXUVmgtaNy4KTfJHTOSJmVmXPTtrdjVWZyPA99h7F5AJgSYx7dd_Z5JgDLTyggo9BVLTFlBaaACIfL8hiUhfAOAMEUJUt-yzy3FYe65nT1fhugOGN088dnyOBCvB5wmGnlDhyN5jD-e_qoVvvK1-xr4cqQu-jO_nVs3unjijccpuBBnH-7YtcUxUHLJBft4Xjb1Ot3sVi_10yZ1UouYyrayBbWodAut1KZUCrvSSNl3gJZI2qLvTY5a2LyrqCeDCpGMyIW22uRqwR7-dx0R7Y_-7OBP-8sD6heZ0lJf</recordid><startdate>200710</startdate><enddate>200710</enddate><creator>Jungwoo Joh</creator><creator>Chowdhury, U.</creator><creator>Tso-Min Chou</creator><creator>Hua-Quen Tserng</creator><creator>Jimenez, J.L.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200710</creationdate><title>Method for Estimation of the Channel Temperature of GaN High Electron Mobility Transistors</title><author>Jungwoo Joh ; Chowdhury, U. ; Tso-Min Chou ; Hua-Quen Tserng ; Jimenez, J.L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i241t-2b8f6eba34b0b249733ac7922dc0afee2f6dd95a41f5c8ede9a3aae91514f4953</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Electric variables measurement</topic><topic>Electrical resistance measurement</topic><topic>Gallium nitride</topic><topic>HEMTs</topic><topic>Life estimation</topic><topic>MODFETs</topic><topic>Pulse measurements</topic><topic>Temperature measurement</topic><topic>Thermal degradation</topic><topic>Thermal resistance</topic><toplevel>online_resources</toplevel><creatorcontrib>Jungwoo Joh</creatorcontrib><creatorcontrib>Chowdhury, U.</creatorcontrib><creatorcontrib>Tso-Min Chou</creatorcontrib><creatorcontrib>Hua-Quen Tserng</creatorcontrib><creatorcontrib>Jimenez, J.L.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jungwoo Joh</au><au>Chowdhury, U.</au><au>Tso-Min Chou</au><au>Hua-Quen Tserng</au><au>Jimenez, J.L.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Method for Estimation of the Channel Temperature of GaN High Electron Mobility Transistors</atitle><btitle>2007 ROCS Workshop[Reliability of Compound Semiconductors Digest]</btitle><stitle>ROCS</stitle><date>2007-10</date><risdate>2007</risdate><spage>87</spage><epage>101</epage><pages>87-101</pages><isbn>9780790801155</isbn><isbn>0790801159</isbn><abstract>A quick and reliable method to estimate the channel temperature of GaN high electron mobility transistors is extremely important in order to understand the physical degradation mechanisms as well as to extract a meaningful life time of the device. In this work, we present a simple yet powerful method to electrically measure the channel temperature of GaN HEMTs with a synchronized pulsed I-V setup. To validate the technique, we extract thermal resistance a) on the same device, multiple times, b) on multiple identical devices on the same wafer, c) on devices with different geometries and d) on identical devices with different level of degradation.</abstract><pub>IEEE</pub><doi>10.1109/ROCS.2007.4391064</doi><tpages>15</tpages></addata></record>
fulltext	fulltext_linktorsrc
identifier	ISBN: 9780790801155
ispartof	2007 ROCS Workshop[Reliability of Compound Semiconductors Digest], 2007, p.87-101
issn
language	eng
recordid	cdi_ieee_primary_4391064
source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Electric variables measurement Electrical resistance measurement Gallium nitride HEMTs Life estimation MODFETs Pulse measurements Temperature measurement Thermal degradation Thermal resistance
title	Method for Estimation of the Channel Temperature of GaN High Electron Mobility Transistors
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-19T00%3A55%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Method%20for%20Estimation%20of%20the%20Channel%20Temperature%20of%20GaN%20High%20Electron%20Mobility%20Transistors&rft.btitle=2007%20ROCS%20Workshop%5BReliability%20of%20Compound%20Semiconductors%20Digest%5D&rft.au=Jungwoo%20Joh&rft.date=2007-10&rft.spage=87&rft.epage=101&rft.pages=87-101&rft.isbn=9780790801155&rft.isbn_list=0790801159&rft_id=info:doi/10.1109/ROCS.2007.4391064&rft_dat=%3Cieee_6IE%3E4391064%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4391064&rfr_iscdi=true