Differential gain and linewidth enhancement factor in GaAs based quantum dot laser diodes
We investigated the differential gain and the linewidth enhancement factor (alpha-factor) from a 5-mum-wide stripe and 1-mm-long cavity uncoated InAs/GaAs quantum dot (QD) single mode laser diode (LD). As a result, we found that alpha-factor decreased with increasing the wavelength and was reached 0...
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creator | Kyoung Chan Kim II Ki Han Young Chae Yoo Jung II Lee Tae Geun Kim |
description | We investigated the differential gain and the linewidth enhancement factor (alpha-factor) from a 5-mum-wide stripe and 1-mm-long cavity uncoated InAs/GaAs quantum dot (QD) single mode laser diode (LD). As a result, we found that alpha-factor decreased with increasing the wavelength and was reached 0.057 at 1286 nm. These results indicate that our QD LD has an excellent beam quality under high-power operation. |
doi_str_mv | 10.1109/NMDC.2006.4388755 |
format | Conference Proceeding |
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As a result, we found that alpha-factor decreased with increasing the wavelength and was reached 0.057 at 1286 nm. These results indicate that our QD LD has an excellent beam quality under high-power operation.</description><identifier>ISBN: 9781424405404</identifier><identifier>ISBN: 1424405408</identifier><identifier>EISBN: 1424405416</identifier><identifier>EISBN: 9781424405411</identifier><identifier>DOI: 10.1109/NMDC.2006.4388755</identifier><identifier>LCCN: 2006930027</identifier><language>eng</language><publisher>IEEE</publisher><subject>Current measurement ; differential gain ; Diode lasers ; Fluctuations ; Gallium arsenide ; laser diodes ; linewidth enhancement facotr ; Performance gain ; quantum dot ; Quantum dot lasers ; Refractive index ; Temperature ; Threshold current ; Wavelength measurement</subject><ispartof>2006 IEEE Nanotechnology Materials and Devices Conference, 2006, Vol.1, p.336-337</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4388755$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4388755$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kyoung Chan Kim</creatorcontrib><creatorcontrib>II Ki Han</creatorcontrib><creatorcontrib>Young Chae Yoo</creatorcontrib><creatorcontrib>Jung II Lee</creatorcontrib><creatorcontrib>Tae Geun Kim</creatorcontrib><title>Differential gain and linewidth enhancement factor in GaAs based quantum dot laser diodes</title><title>2006 IEEE Nanotechnology Materials and Devices Conference</title><addtitle>NMDC</addtitle><description>We investigated the differential gain and the linewidth enhancement factor (alpha-factor) from a 5-mum-wide stripe and 1-mm-long cavity uncoated InAs/GaAs quantum dot (QD) single mode laser diode (LD). As a result, we found that alpha-factor decreased with increasing the wavelength and was reached 0.057 at 1286 nm. These results indicate that our QD LD has an excellent beam quality under high-power operation.</description><subject>Current measurement</subject><subject>differential gain</subject><subject>Diode lasers</subject><subject>Fluctuations</subject><subject>Gallium arsenide</subject><subject>laser diodes</subject><subject>linewidth enhancement facotr</subject><subject>Performance gain</subject><subject>quantum dot</subject><subject>Quantum dot lasers</subject><subject>Refractive index</subject><subject>Temperature</subject><subject>Threshold current</subject><subject>Wavelength measurement</subject><isbn>9781424405404</isbn><isbn>1424405408</isbn><isbn>1424405416</isbn><isbn>9781424405411</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1kMFOwzAQRI1QJWjJByAu_oGEteM49rFKoSAVuMCBU7WJN9QocSBJhfj7pqKMVhrN6GkPw9i1gEQIsLfPT6sikQA6UakxeZadsblQUinIlNDnLLK5-c-gZmx-ZG0KIPMLFg3DJ0xKrZ7KS_a-8nVNPYXRY8M_0AeOwfHGB_rxbtxxCjsMFbUTwWusxq7nE7PG5cBLHMjx7z2Gcd9y1428mZqeO985Gq7YrMZmoOjkC_Z2f_daPMSbl_VjsdzEXuTZGOdARqNQVFdSaiCFqpI2k5QLVVrltILqGIwpS6fTMsPpjCZragBbiXTBbv7-eiLafvW-xf53e5omPQAFTVU5</recordid><startdate>200610</startdate><enddate>200610</enddate><creator>Kyoung Chan Kim</creator><creator>II Ki Han</creator><creator>Young Chae Yoo</creator><creator>Jung II Lee</creator><creator>Tae Geun Kim</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200610</creationdate><title>Differential gain and linewidth enhancement factor in GaAs based quantum dot laser diodes</title><author>Kyoung Chan Kim ; II Ki Han ; Young Chae Yoo ; Jung II Lee ; Tae Geun Kim</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-70e86a14efc2260e4a4c2952e714b94d640c2e7188bbd63b5ab5a86e98f009c13</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Current measurement</topic><topic>differential gain</topic><topic>Diode lasers</topic><topic>Fluctuations</topic><topic>Gallium arsenide</topic><topic>laser diodes</topic><topic>linewidth enhancement facotr</topic><topic>Performance gain</topic><topic>quantum dot</topic><topic>Quantum dot lasers</topic><topic>Refractive index</topic><topic>Temperature</topic><topic>Threshold current</topic><topic>Wavelength measurement</topic><toplevel>online_resources</toplevel><creatorcontrib>Kyoung Chan Kim</creatorcontrib><creatorcontrib>II Ki Han</creatorcontrib><creatorcontrib>Young Chae Yoo</creatorcontrib><creatorcontrib>Jung II Lee</creatorcontrib><creatorcontrib>Tae Geun Kim</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kyoung Chan Kim</au><au>II Ki Han</au><au>Young Chae Yoo</au><au>Jung II Lee</au><au>Tae Geun Kim</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Differential gain and linewidth enhancement factor in GaAs based quantum dot laser diodes</atitle><btitle>2006 IEEE Nanotechnology Materials and Devices Conference</btitle><stitle>NMDC</stitle><date>2006-10</date><risdate>2006</risdate><volume>1</volume><spage>336</spage><epage>337</epage><pages>336-337</pages><isbn>9781424405404</isbn><isbn>1424405408</isbn><eisbn>1424405416</eisbn><eisbn>9781424405411</eisbn><abstract>We investigated the differential gain and the linewidth enhancement factor (alpha-factor) from a 5-mum-wide stripe and 1-mm-long cavity uncoated InAs/GaAs quantum dot (QD) single mode laser diode (LD). As a result, we found that alpha-factor decreased with increasing the wavelength and was reached 0.057 at 1286 nm. These results indicate that our QD LD has an excellent beam quality under high-power operation.</abstract><pub>IEEE</pub><doi>10.1109/NMDC.2006.4388755</doi><tpages>2</tpages></addata></record> |
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subjects | Current measurement differential gain Diode lasers Fluctuations Gallium arsenide laser diodes linewidth enhancement facotr Performance gain quantum dot Quantum dot lasers Refractive index Temperature Threshold current Wavelength measurement |
title | Differential gain and linewidth enhancement factor in GaAs based quantum dot laser diodes |
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