Differential gain and linewidth enhancement factor in GaAs based quantum dot laser diodes

We investigated the differential gain and the linewidth enhancement factor (alpha-factor) from a 5-mum-wide stripe and 1-mm-long cavity uncoated InAs/GaAs quantum dot (QD) single mode laser diode (LD). As a result, we found that alpha-factor decreased with increasing the wavelength and was reached 0...

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Hauptverfasser: Kyoung Chan Kim, II Ki Han, Young Chae Yoo, Jung II Lee, Tae Geun Kim
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II Ki Han
Young Chae Yoo
Jung II Lee
Tae Geun Kim
description We investigated the differential gain and the linewidth enhancement factor (alpha-factor) from a 5-mum-wide stripe and 1-mm-long cavity uncoated InAs/GaAs quantum dot (QD) single mode laser diode (LD). As a result, we found that alpha-factor decreased with increasing the wavelength and was reached 0.057 at 1286 nm. These results indicate that our QD LD has an excellent beam quality under high-power operation.
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subjects Current measurement
differential gain
Diode lasers
Fluctuations
Gallium arsenide
laser diodes
linewidth enhancement facotr
Performance gain
quantum dot
Quantum dot lasers
Refractive index
Temperature
Threshold current
Wavelength measurement
title Differential gain and linewidth enhancement factor in GaAs based quantum dot laser diodes
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