The Region-Exhaustive Fault Model

Device failure mechanisms of today's deep sub-micron processes are not well-modeled by single stuck-at faults, and hence several advanced fault models have been proposed in the past. Gate-exhaustive fault models were proposed to exercise a gate completely and then observe the resultant response...

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Bibliographische Detailangaben
Hauptverfasser: Jas, A., Natarajan, S., Patil, S.
Format: Tagungsbericht
Sprache:eng
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