Performance of Reliable Mesa-Etched InP-based Geiger-Mode Avalanche Photodiodes and Arrays

Performance of Reliable Mesa-Etched InP-based Geiger-Mode Avalanche Photodiodes and Arrays

The fabrication of reliable InP-based Geiger- mode avalanche photodiodes are described. Devices passivated with polyimide coated with silicon nitride have not degraded even while aging under more strenuous conditions than those used in fielded systems.

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Bibliographische Detailangaben
Hauptverfasser: Smith, G.M., Donnelly, J.P., Mcintosh, K.A., Duerr, E.K., Shaver, D.C., Verghese, S., Funk, J.E., Kumar, N.R., Mahoney, L.J., Molvar, K.M., O'Donnell, F.J., Chapman, D.C., Oakley, D.C., Ray, K.G.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Aging
Avalanche photodiodes
CMOS logic circuits
Degradation
Fabrication
Indium phosphide
Optical pulses
Passivation
Photonic band gap
Polyimides
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Beschreibung
Zusammenfassung:The fabrication of reliable InP-based Geiger- mode avalanche photodiodes are described. Devices passivated with polyimide coated with silicon nitride have not degraded even while aging under more strenuous conditions than those used in fielded systems.
ISSN:1092-8081
2766-1733
DOI:10.1109/LEOS.2007.4382503