A Plasma Damage Mitigation Concept for SOI Technologies: Lightning Rods

A new device structure to mitigate plasma charging damage in advanced SOI technologies has been demonstrated that can be easily incorporated into modern-day, as well as future-scaled microprocessor designs. This novel structure offers improved product yields and also mitigates "walking- wounded...

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Bibliographische Detailangaben
Hauptverfasser:	Pelella, Mario M., Zhou, JR, Eppes, David, Leary, Mike, Hale, Stephen, Noorlag, Date, Bullard, Larry, Huebler, Peter, Schuler, Stefan, Dreizner, Andreas, Working, Jim, Chan, Darin, Schwan, Christoph, Horstmann, Manfred, En, Bill, Wieczorek, Karsten, Greenlaw, David, Heidel, Thomas, Heinig, Volker, Miethke, John, Kepler, Nick, Kruegel, Stephan, Frohberg, Kai, Rivers, Jason, Heller, Thomas, Richter, Ralf, Rodriguez, Norma, Klein, Rich
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Capacitors Circuits Diodes Electrons Etching Lightning Microprocessors Plasma applications Plasma density Plasma materials processing
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Beschreibung
Zusammenfassung:	A new device structure to mitigate plasma charging damage in advanced SOI technologies has been demonstrated that can be easily incorporated into modern-day, as well as future-scaled microprocessor designs. This novel structure offers improved product yields and also mitigates "walking- wounded" device characteristics that oftentimes plague the operation and speed grades of advanced microprocessors with threshold voltage shifts and increased leakage currents.
ISSN:	1078-621X 2577-2295
DOI:	10.1109/SOI.2007.4357860