Millimeter Wave Propagation in GaAs and Si Two-Layer Dielectric Rod Waveguides

Millimeter Wave Propagation in GaAs and Si Two-Layer Dielectric Rod Waveguides

Traveling wave mode transformation in GaAs and Si dielectric rod waveguides at frequencies 75 -110 GHz is experimentally studied. The influence of p-n and i-n junction capacitance is noticed as a varactor type component ,that imposes new applications of two layer structures in millimeter wave integr...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Lyubchenko, V.E., Briantseva, T.A., Dudorov, S.N., Lioubtchenko, D.V., Markov, I.A., Markov, R.I., Raisanen, A.V.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Attenuation
Capacitance
Delay
Dielectrics
Electromagnetic waveguides
Frequency
Gallium arsenide
Millimeter wave propagation
P-n junctions
Semiconductor waveguides
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Traveling wave mode transformation in GaAs and Si dielectric rod waveguides at frequencies 75 -110 GHz is experimentally studied. The influence of p-n and i-n junction capacitance is noticed as a varactor type component ,that imposes new applications of two layer structures in millimeter wave integrated circuits.
DOI:10.1109/MIKON.2006.4345328