Strained Si Channel MOSFETs with Embedded Silicon Carbon Formed by Solid Phase Epitaxy
Current drive enhancement is demonstrated in sub-40 nm NFETs with strained silicon carbon (Si:C) source and drain using a novel solid-phase epitaxy (SPE) technique for the first time. The very simple process uses no recess etch or epi deposition steps, adds minimal process cost, and can be easily in...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , , , , , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 45 |
|---|---|
| container_issue | |
| container_start_page | 44 |
| container_title | |
| container_volume | |
| creator | Yaocheng Liu Gluschenkov, O. Jinghong Li Madan, A. Ozcan, A. Byeong Kim Dyer, T. Chakravarti, A. Chan, K. Lavoie, C. Popova, I. Pinto, T. Rovedo, N. Zhijiong Luo Loesing, R. Henson, W. Ken Rim |
| description | Current drive enhancement is demonstrated in sub-40 nm NFETs with strained silicon carbon (Si:C) source and drain using a novel solid-phase epitaxy (SPE) technique for the first time. The very simple process uses no recess etch or epi deposition steps, adds minimal process cost, and can be easily integrated into a standard CMOS process. With a record high 1.65 at% substitutional C concentration in source and drain, 615 MPa uniaxial tensile stress was introduced in the channel, leading to a 35% improvement in electron mobility and 6% and 15% current drive increase in sub-40 and 200 nm channel length devices respectively. |
| doi_str_mv | 10.1109/VLSIT.2007.4339720 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4339720</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4339720</ieee_id><sourcerecordid>4339720</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-11feb4ba843efc9e66f8e363d5cd3abe9fc2534984ba0dbfb348687f26cb30183</originalsourceid><addsrcrecordid>eNotkF1LwzAYhQMquE3_gN7kD7QmfdM0vZTSuUFlQuduR9K8oZF-jLag_fcW3dXhHB6ei0PIE2ch5yx9ORXl_hhGjCWhAEiTiN2QtUiXrgQDeUtWLBEQ8FhG92Q9jl-MRSwGtSKnchq079DS0tOs1l2HDX0_lNv8ONJvP9U0bw1a-wc0vuo7munBLLHth3ZZzUzLvvGWftR6RJpf_KR_5gdy53Qz4uM1N-RzMWa7oDi87bPXIvA8iaeAc4dGGK0EoKtSlNIpBAk2rixog6mrohhEqhaGWeMMCCVV4iJZGWBcwYY8_3s9Ip4vg2_1MJ-vH8AvbsJQcg</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Strained Si Channel MOSFETs with Embedded Silicon Carbon Formed by Solid Phase Epitaxy</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Yaocheng Liu ; Gluschenkov, O. ; Jinghong Li ; Madan, A. ; Ozcan, A. ; Byeong Kim ; Dyer, T. ; Chakravarti, A. ; Chan, K. ; Lavoie, C. ; Popova, I. ; Pinto, T. ; Rovedo, N. ; Zhijiong Luo ; Loesing, R. ; Henson, W. ; Ken Rim</creator><creatorcontrib>Yaocheng Liu ; Gluschenkov, O. ; Jinghong Li ; Madan, A. ; Ozcan, A. ; Byeong Kim ; Dyer, T. ; Chakravarti, A. ; Chan, K. ; Lavoie, C. ; Popova, I. ; Pinto, T. ; Rovedo, N. ; Zhijiong Luo ; Loesing, R. ; Henson, W. ; Ken Rim</creatorcontrib><description>Current drive enhancement is demonstrated in sub-40 nm NFETs with strained silicon carbon (Si:C) source and drain using a novel solid-phase epitaxy (SPE) technique for the first time. The very simple process uses no recess etch or epi deposition steps, adds minimal process cost, and can be easily integrated into a standard CMOS process. With a record high 1.65 at% substitutional C concentration in source and drain, 615 MPa uniaxial tensile stress was introduced in the channel, leading to a 35% improvement in electron mobility and 6% and 15% current drive increase in sub-40 and 200 nm channel length devices respectively.</description><identifier>ISSN: 0743-1562</identifier><identifier>ISBN: 4900784036</identifier><identifier>ISBN: 9784900784031</identifier><identifier>DOI: 10.1109/VLSIT.2007.4339720</identifier><language>eng</language><publisher>IEEE</publisher><subject>Electron beams ; Electron mobility ; Epitaxial growth ; mobility and solid phase epitaxy ; MOSFET ; MOSFETs ; Silicon ; silicon carbon ; Solids ; Strain control ; strained Si ; Stress measurement ; Tensile strain ; Tensile stress</subject><ispartof>2007 IEEE Symposium on VLSI Technology, 2007, p.44-45</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4339720$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4339720$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Yaocheng Liu</creatorcontrib><creatorcontrib>Gluschenkov, O.</creatorcontrib><creatorcontrib>Jinghong Li</creatorcontrib><creatorcontrib>Madan, A.</creatorcontrib><creatorcontrib>Ozcan, A.</creatorcontrib><creatorcontrib>Byeong Kim</creatorcontrib><creatorcontrib>Dyer, T.</creatorcontrib><creatorcontrib>Chakravarti, A.</creatorcontrib><creatorcontrib>Chan, K.</creatorcontrib><creatorcontrib>Lavoie, C.</creatorcontrib><creatorcontrib>Popova, I.</creatorcontrib><creatorcontrib>Pinto, T.</creatorcontrib><creatorcontrib>Rovedo, N.</creatorcontrib><creatorcontrib>Zhijiong Luo</creatorcontrib><creatorcontrib>Loesing, R.</creatorcontrib><creatorcontrib>Henson, W.</creatorcontrib><creatorcontrib>Ken Rim</creatorcontrib><title>Strained Si Channel MOSFETs with Embedded Silicon Carbon Formed by Solid Phase Epitaxy</title><title>2007 IEEE Symposium on VLSI Technology</title><addtitle>VLSIT</addtitle><description>Current drive enhancement is demonstrated in sub-40 nm NFETs with strained silicon carbon (Si:C) source and drain using a novel solid-phase epitaxy (SPE) technique for the first time. The very simple process uses no recess etch or epi deposition steps, adds minimal process cost, and can be easily integrated into a standard CMOS process. With a record high 1.65 at% substitutional C concentration in source and drain, 615 MPa uniaxial tensile stress was introduced in the channel, leading to a 35% improvement in electron mobility and 6% and 15% current drive increase in sub-40 and 200 nm channel length devices respectively.</description><subject>Electron beams</subject><subject>Electron mobility</subject><subject>Epitaxial growth</subject><subject>mobility and solid phase epitaxy</subject><subject>MOSFET</subject><subject>MOSFETs</subject><subject>Silicon</subject><subject>silicon carbon</subject><subject>Solids</subject><subject>Strain control</subject><subject>strained Si</subject><subject>Stress measurement</subject><subject>Tensile strain</subject><subject>Tensile stress</subject><issn>0743-1562</issn><isbn>4900784036</isbn><isbn>9784900784031</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkF1LwzAYhQMquE3_gN7kD7QmfdM0vZTSuUFlQuduR9K8oZF-jLag_fcW3dXhHB6ei0PIE2ch5yx9ORXl_hhGjCWhAEiTiN2QtUiXrgQDeUtWLBEQ8FhG92Q9jl-MRSwGtSKnchq079DS0tOs1l2HDX0_lNv8ONJvP9U0bw1a-wc0vuo7munBLLHth3ZZzUzLvvGWftR6RJpf_KR_5gdy53Qz4uM1N-RzMWa7oDi87bPXIvA8iaeAc4dGGK0EoKtSlNIpBAk2rixog6mrohhEqhaGWeMMCCVV4iJZGWBcwYY8_3s9Ip4vg2_1MJ-vH8AvbsJQcg</recordid><startdate>200706</startdate><enddate>200706</enddate><creator>Yaocheng Liu</creator><creator>Gluschenkov, O.</creator><creator>Jinghong Li</creator><creator>Madan, A.</creator><creator>Ozcan, A.</creator><creator>Byeong Kim</creator><creator>Dyer, T.</creator><creator>Chakravarti, A.</creator><creator>Chan, K.</creator><creator>Lavoie, C.</creator><creator>Popova, I.</creator><creator>Pinto, T.</creator><creator>Rovedo, N.</creator><creator>Zhijiong Luo</creator><creator>Loesing, R.</creator><creator>Henson, W.</creator><creator>Ken Rim</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200706</creationdate><title>Strained Si Channel MOSFETs with Embedded Silicon Carbon Formed by Solid Phase Epitaxy</title><author>Yaocheng Liu ; Gluschenkov, O. ; Jinghong Li ; Madan, A. ; Ozcan, A. ; Byeong Kim ; Dyer, T. ; Chakravarti, A. ; Chan, K. ; Lavoie, C. ; Popova, I. ; Pinto, T. ; Rovedo, N. ; Zhijiong Luo ; Loesing, R. ; Henson, W. ; Ken Rim</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-11feb4ba843efc9e66f8e363d5cd3abe9fc2534984ba0dbfb348687f26cb30183</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Electron beams</topic><topic>Electron mobility</topic><topic>Epitaxial growth</topic><topic>mobility and solid phase epitaxy</topic><topic>MOSFET</topic><topic>MOSFETs</topic><topic>Silicon</topic><topic>silicon carbon</topic><topic>Solids</topic><topic>Strain control</topic><topic>strained Si</topic><topic>Stress measurement</topic><topic>Tensile strain</topic><topic>Tensile stress</topic><toplevel>online_resources</toplevel><creatorcontrib>Yaocheng Liu</creatorcontrib><creatorcontrib>Gluschenkov, O.</creatorcontrib><creatorcontrib>Jinghong Li</creatorcontrib><creatorcontrib>Madan, A.</creatorcontrib><creatorcontrib>Ozcan, A.</creatorcontrib><creatorcontrib>Byeong Kim</creatorcontrib><creatorcontrib>Dyer, T.</creatorcontrib><creatorcontrib>Chakravarti, A.</creatorcontrib><creatorcontrib>Chan, K.</creatorcontrib><creatorcontrib>Lavoie, C.</creatorcontrib><creatorcontrib>Popova, I.</creatorcontrib><creatorcontrib>Pinto, T.</creatorcontrib><creatorcontrib>Rovedo, N.</creatorcontrib><creatorcontrib>Zhijiong Luo</creatorcontrib><creatorcontrib>Loesing, R.</creatorcontrib><creatorcontrib>Henson, W.</creatorcontrib><creatorcontrib>Ken Rim</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yaocheng Liu</au><au>Gluschenkov, O.</au><au>Jinghong Li</au><au>Madan, A.</au><au>Ozcan, A.</au><au>Byeong Kim</au><au>Dyer, T.</au><au>Chakravarti, A.</au><au>Chan, K.</au><au>Lavoie, C.</au><au>Popova, I.</au><au>Pinto, T.</au><au>Rovedo, N.</au><au>Zhijiong Luo</au><au>Loesing, R.</au><au>Henson, W.</au><au>Ken Rim</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Strained Si Channel MOSFETs with Embedded Silicon Carbon Formed by Solid Phase Epitaxy</atitle><btitle>2007 IEEE Symposium on VLSI Technology</btitle><stitle>VLSIT</stitle><date>2007-06</date><risdate>2007</risdate><spage>44</spage><epage>45</epage><pages>44-45</pages><issn>0743-1562</issn><isbn>4900784036</isbn><isbn>9784900784031</isbn><abstract>Current drive enhancement is demonstrated in sub-40 nm NFETs with strained silicon carbon (Si:C) source and drain using a novel solid-phase epitaxy (SPE) technique for the first time. The very simple process uses no recess etch or epi deposition steps, adds minimal process cost, and can be easily integrated into a standard CMOS process. With a record high 1.65 at% substitutional C concentration in source and drain, 615 MPa uniaxial tensile stress was introduced in the channel, leading to a 35% improvement in electron mobility and 6% and 15% current drive increase in sub-40 and 200 nm channel length devices respectively.</abstract><pub>IEEE</pub><doi>10.1109/VLSIT.2007.4339720</doi><tpages>2</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0743-1562 |
| ispartof | 2007 IEEE Symposium on VLSI Technology, 2007, p.44-45 |
| issn | 0743-1562 |
| language | eng |
| recordid | cdi_ieee_primary_4339720 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Electron beams Electron mobility Epitaxial growth mobility and solid phase epitaxy MOSFET MOSFETs Silicon silicon carbon Solids Strain control strained Si Stress measurement Tensile strain Tensile stress |
| title | Strained Si Channel MOSFETs with Embedded Silicon Carbon Formed by Solid Phase Epitaxy |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-21T21%3A40%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Strained%20Si%20Channel%20MOSFETs%20with%20Embedded%20Silicon%20Carbon%20Formed%20by%20Solid%20Phase%20Epitaxy&rft.btitle=2007%20IEEE%20Symposium%20on%20VLSI%20Technology&rft.au=Yaocheng%20Liu&rft.date=2007-06&rft.spage=44&rft.epage=45&rft.pages=44-45&rft.issn=0743-1562&rft.isbn=4900784036&rft.isbn_list=9784900784031&rft_id=info:doi/10.1109/VLSIT.2007.4339720&rft_dat=%3Cieee_6IE%3E4339720%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4339720&rfr_iscdi=true |