Easy Prediction of Degradation in Transistor Current Gain over Large Ranges of Operating Current
The neutron damage factor varies greatly with emitter current density. An easy formulation is given to predict this factor for any current using two intercept parameters and three almost constant slope parameters. The intercept parameters may be determined from measurements of DC current gain, hFE,...
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| Veröffentlicht in: | IEEE Trans. Nucl. Sci.; (United States) 1984-01, Vol.31 (6), p.1417-1422 |
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| container_end_page | 1422 |
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| container_issue | 6 |
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| container_title | IEEE Trans. Nucl. Sci.; (United States) |
| container_volume | 31 |
| creator | Ahlport, B. T. Anderson, S. L. |
| description | The neutron damage factor varies greatly with emitter current density. An easy formulation is given to predict this factor for any current using two intercept parameters and three almost constant slope parameters. The intercept parameters may be determined from measurements of DC current gain, hFE, made initially and after a neutron exposure at two chosen currents. This damage factor equation, initial minimum hFE specifications, and statistical weighting factors can be used to determine worst case hFE values over a large range of operating currents after neutron exposure. Confirming test results on many examples of popular transistors are tabulated. |
| doi_str_mv | 10.1109/TNS.1984.4333522 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref_RIE</sourceid><recordid>TN_cdi_ieee_primary_4333522</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4333522</ieee_id><sourcerecordid>10_1109_TNS_1984_4333522</sourcerecordid><originalsourceid>FETCH-LOGICAL-c288t-e36f70f32c24108eb8102727169ca94dc72081acbf3263e5216aeec73703ca473</originalsourceid><addsrcrecordid>eNo9kE1LAzEQhoMoWD_ugpfgfWs-N8lRaq1CsaL1HNN0do1otiSr0H9valtPwzvzvHN4ELqgZEgpMdfzx5chNVoMBedcMnaABlRKXVGp9CEaEEJ1ZYQxx-gk548ShSRygN7GLq_xU4Jl8H3oIu4afAttckv3F0PE8-RiDrnvEh59pwSxxxNX9t0PJDx1qQX87GILedOdrSCVZmz37Bk6atxnhvPdPEWvd-P56L6aziYPo5tp5ZnWfQW8bhRpOPNMUKJhoSlhiilaG--MWHrFiKbOLwpSc5CM1g7AK64I904ofoqutn-73AebfejBv_suRvC9lXVRU5MCkS3kU5dzgsauUvhyaW0psRuNtmi0G412p7FULreVAAD_-P76C0_gbe0</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Easy Prediction of Degradation in Transistor Current Gain over Large Ranges of Operating Current</title><source>IEEE Electronic Library (IEL)</source><creator>Ahlport, B. T. ; Anderson, S. L.</creator><creatorcontrib>Ahlport, B. T. ; Anderson, S. L. ; Northrop Corporation, Electronics Division, 2301 W. 120th Street, Hawthorne, California 90250</creatorcontrib><description>The neutron damage factor varies greatly with emitter current density. An easy formulation is given to predict this factor for any current using two intercept parameters and three almost constant slope parameters. The intercept parameters may be determined from measurements of DC current gain, hFE, made initially and after a neutron exposure at two chosen currents. This damage factor equation, initial minimum hFE specifications, and statistical weighting factors can be used to determine worst case hFE values over a large range of operating currents after neutron exposure. Confirming test results on many examples of popular transistors are tabulated.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.1984.4333522</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>United States: IEEE</publisher><subject>440200 - Radiation Effects on Instrument Components, Instruments, or Electronic Systems ; AMPLIFICATION ; BARYONS ; Bipolar transistors ; Costs ; CURRENT DENSITY ; Current measurement ; CURRENTS ; DAMAGING NEUTRON FLUENCE ; Degradation ; DIRECT CURRENT ; ELECTRIC CURRENTS ; ELEMENTARY PARTICLES ; EQUATIONS ; FERMIONS ; FORECASTING ; GAIN ; Gain measurement ; HADRONS ; INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY ; MATHEMATICS ; NEUTRON FLUENCE ; NEUTRONS ; NUCLEONS ; SEMICONDUCTOR DEVICES ; SPECIFICATIONS ; STATISTICS ; Testing ; TRANSISTORS ; Voltage</subject><ispartof>IEEE Trans. Nucl. Sci.; (United States), 1984-01, Vol.31 (6), p.1417-1422</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c288t-e36f70f32c24108eb8102727169ca94dc72081acbf3263e5216aeec73703ca473</citedby><cites>FETCH-LOGICAL-c288t-e36f70f32c24108eb8102727169ca94dc72081acbf3263e5216aeec73703ca473</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4333522$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,885,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4333522$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://www.osti.gov/biblio/5619860$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Ahlport, B. T.</creatorcontrib><creatorcontrib>Anderson, S. L.</creatorcontrib><creatorcontrib>Northrop Corporation, Electronics Division, 2301 W. 120th Street, Hawthorne, California 90250</creatorcontrib><title>Easy Prediction of Degradation in Transistor Current Gain over Large Ranges of Operating Current</title><title>IEEE Trans. Nucl. Sci.; (United States)</title><addtitle>TNS</addtitle><description>The neutron damage factor varies greatly with emitter current density. An easy formulation is given to predict this factor for any current using two intercept parameters and three almost constant slope parameters. The intercept parameters may be determined from measurements of DC current gain, hFE, made initially and after a neutron exposure at two chosen currents. This damage factor equation, initial minimum hFE specifications, and statistical weighting factors can be used to determine worst case hFE values over a large range of operating currents after neutron exposure. Confirming test results on many examples of popular transistors are tabulated.</description><subject>440200 - Radiation Effects on Instrument Components, Instruments, or Electronic Systems</subject><subject>AMPLIFICATION</subject><subject>BARYONS</subject><subject>Bipolar transistors</subject><subject>Costs</subject><subject>CURRENT DENSITY</subject><subject>Current measurement</subject><subject>CURRENTS</subject><subject>DAMAGING NEUTRON FLUENCE</subject><subject>Degradation</subject><subject>DIRECT CURRENT</subject><subject>ELECTRIC CURRENTS</subject><subject>ELEMENTARY PARTICLES</subject><subject>EQUATIONS</subject><subject>FERMIONS</subject><subject>FORECASTING</subject><subject>GAIN</subject><subject>Gain measurement</subject><subject>HADRONS</subject><subject>INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY</subject><subject>MATHEMATICS</subject><subject>NEUTRON FLUENCE</subject><subject>NEUTRONS</subject><subject>NUCLEONS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SPECIFICATIONS</subject><subject>STATISTICS</subject><subject>Testing</subject><subject>TRANSISTORS</subject><subject>Voltage</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1984</creationdate><recordtype>article</recordtype><recordid>eNo9kE1LAzEQhoMoWD_ugpfgfWs-N8lRaq1CsaL1HNN0do1otiSr0H9valtPwzvzvHN4ELqgZEgpMdfzx5chNVoMBedcMnaABlRKXVGp9CEaEEJ1ZYQxx-gk548ShSRygN7GLq_xU4Jl8H3oIu4afAttckv3F0PE8-RiDrnvEh59pwSxxxNX9t0PJDx1qQX87GILedOdrSCVZmz37Bk6atxnhvPdPEWvd-P56L6aziYPo5tp5ZnWfQW8bhRpOPNMUKJhoSlhiilaG--MWHrFiKbOLwpSc5CM1g7AK64I904ofoqutn-73AebfejBv_suRvC9lXVRU5MCkS3kU5dzgsauUvhyaW0psRuNtmi0G412p7FULreVAAD_-P76C0_gbe0</recordid><startdate>19840101</startdate><enddate>19840101</enddate><creator>Ahlport, B. T.</creator><creator>Anderson, S. L.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>19840101</creationdate><title>Easy Prediction of Degradation in Transistor Current Gain over Large Ranges of Operating Current</title><author>Ahlport, B. T. ; Anderson, S. L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c288t-e36f70f32c24108eb8102727169ca94dc72081acbf3263e5216aeec73703ca473</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1984</creationdate><topic>440200 - Radiation Effects on Instrument Components, Instruments, or Electronic Systems</topic><topic>AMPLIFICATION</topic><topic>BARYONS</topic><topic>Bipolar transistors</topic><topic>Costs</topic><topic>CURRENT DENSITY</topic><topic>Current measurement</topic><topic>CURRENTS</topic><topic>DAMAGING NEUTRON FLUENCE</topic><topic>Degradation</topic><topic>DIRECT CURRENT</topic><topic>ELECTRIC CURRENTS</topic><topic>ELEMENTARY PARTICLES</topic><topic>EQUATIONS</topic><topic>FERMIONS</topic><topic>FORECASTING</topic><topic>GAIN</topic><topic>Gain measurement</topic><topic>HADRONS</topic><topic>INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY</topic><topic>MATHEMATICS</topic><topic>NEUTRON FLUENCE</topic><topic>NEUTRONS</topic><topic>NUCLEONS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SPECIFICATIONS</topic><topic>STATISTICS</topic><topic>Testing</topic><topic>TRANSISTORS</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ahlport, B. T.</creatorcontrib><creatorcontrib>Anderson, S. L.</creatorcontrib><creatorcontrib>Northrop Corporation, Electronics Division, 2301 W. 120th Street, Hawthorne, California 90250</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>IEEE Trans. Nucl. Sci.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ahlport, B. T.</au><au>Anderson, S. L.</au><aucorp>Northrop Corporation, Electronics Division, 2301 W. 120th Street, Hawthorne, California 90250</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Easy Prediction of Degradation in Transistor Current Gain over Large Ranges of Operating Current</atitle><jtitle>IEEE Trans. Nucl. Sci.; (United States)</jtitle><stitle>TNS</stitle><date>1984-01-01</date><risdate>1984</risdate><volume>31</volume><issue>6</issue><spage>1417</spage><epage>1422</epage><pages>1417-1422</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>The neutron damage factor varies greatly with emitter current density. An easy formulation is given to predict this factor for any current using two intercept parameters and three almost constant slope parameters. The intercept parameters may be determined from measurements of DC current gain, hFE, made initially and after a neutron exposure at two chosen currents. This damage factor equation, initial minimum hFE specifications, and statistical weighting factors can be used to determine worst case hFE values over a large range of operating currents after neutron exposure. Confirming test results on many examples of popular transistors are tabulated.</abstract><cop>United States</cop><pub>IEEE</pub><doi>10.1109/TNS.1984.4333522</doi><tpages>6</tpages></addata></record> |
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| identifier | ISSN: 0018-9499 |
| ispartof | IEEE Trans. Nucl. Sci.; (United States), 1984-01, Vol.31 (6), p.1417-1422 |
| issn | 0018-9499 1558-1578 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | 440200 - Radiation Effects on Instrument Components, Instruments, or Electronic Systems AMPLIFICATION BARYONS Bipolar transistors Costs CURRENT DENSITY Current measurement CURRENTS DAMAGING NEUTRON FLUENCE Degradation DIRECT CURRENT ELECTRIC CURRENTS ELEMENTARY PARTICLES EQUATIONS FERMIONS FORECASTING GAIN Gain measurement HADRONS INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY MATHEMATICS NEUTRON FLUENCE NEUTRONS NUCLEONS SEMICONDUCTOR DEVICES SPECIFICATIONS STATISTICS Testing TRANSISTORS Voltage |
| title | Easy Prediction of Degradation in Transistor Current Gain over Large Ranges of Operating Current |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T16%3A36%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Easy%20Prediction%20of%20Degradation%20in%20Transistor%20Current%20Gain%20over%20Large%20Ranges%20of%20Operating%20Current&rft.jtitle=IEEE%20Trans.%20Nucl.%20Sci.;%20(United%20States)&rft.au=Ahlport,%20B.%20T.&rft.aucorp=Northrop%20Corporation,%20Electronics%20Division,%202301%20W.%20120th%20Street,%20Hawthorne,%20California%2090250&rft.date=1984-01-01&rft.volume=31&rft.issue=6&rft.spage=1417&rft.epage=1422&rft.pages=1417-1422&rft.issn=0018-9499&rft.eissn=1558-1578&rft.coden=IETNAE&rft_id=info:doi/10.1109/TNS.1984.4333522&rft_dat=%3Ccrossref_RIE%3E10_1109_TNS_1984_4333522%3C/crossref_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4333522&rfr_iscdi=true |