Hardness Assurance Considerations for Long-Term Ionizing Radiation Effects on Bipolar Structures
The purpose of this work was to assess the theoretical understanding of long-term ionization effects in semiconductor bipolar devices in support of developing hardness assurance techniques. The principal effort was directed at studying transistor gain degradation mechanisms by use of models relating...
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| Veröffentlicht in: | IEEE transactions on nuclear science 1978-01, Vol.25 (6), p.1502-1507 |
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| container_end_page | 1507 |
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| container_issue | 6 |
| container_start_page | 1502 |
| container_title | IEEE transactions on nuclear science |
| container_volume | 25 |
| creator | Hart, Arthur R. Smyth, John B. van Lint, Victor A. J. Snowden, Donald P. Leadon, Roland E. |
| description | The purpose of this work was to assess the theoretical understanding of long-term ionization effects in semiconductor bipolar devices in support of developing hardness assurance techniques. The principal effort was directed at studying transistor gain degradation mechanisms by use of models relating semiconductor physical and electrical parameters to surface properties. Ionizing radiation effects on surface properties were used to identify critical physical parameters for use in hardness assurance procedures. Model implications and predictions were then compared with existing data to evaluate their accuracy and usefulness as a hardness assurance tool. |
| doi_str_mv | 10.1109/TNS.1978.4329561 |
| format | Article |
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J. ; Snowden, Donald P. ; Leadon, Roland E.</creator><creatorcontrib>Hart, Arthur R. ; Smyth, John B. ; van Lint, Victor A. J. ; Snowden, Donald P. ; Leadon, Roland E.</creatorcontrib><description>The purpose of this work was to assess the theoretical understanding of long-term ionization effects in semiconductor bipolar devices in support of developing hardness assurance techniques. The principal effort was directed at studying transistor gain degradation mechanisms by use of models relating semiconductor physical and electrical parameters to surface properties. Ionizing radiation effects on surface properties were used to identify critical physical parameters for use in hardness assurance procedures. 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J.</creatorcontrib><creatorcontrib>Snowden, Donald P.</creatorcontrib><creatorcontrib>Leadon, Roland E.</creatorcontrib><title>Hardness Assurance Considerations for Long-Term Ionizing Radiation Effects on Bipolar Structures</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>The purpose of this work was to assess the theoretical understanding of long-term ionization effects in semiconductor bipolar devices in support of developing hardness assurance techniques. The principal effort was directed at studying transistor gain degradation mechanisms by use of models relating semiconductor physical and electrical parameters to surface properties. Ionizing radiation effects on surface properties were used to identify critical physical parameters for use in hardness assurance procedures. Model implications and predictions were then compared with existing data to evaluate their accuracy and usefulness as a hardness assurance tool.</description><subject>Bipolar transistors</subject><subject>Charge carrier processes</subject><subject>Degradation</subject><subject>Electron traps</subject><subject>Energy capture</subject><subject>Interface states</subject><subject>Ionization</subject><subject>Ionizing radiation</subject><subject>Lead compounds</subject><subject>Mechanical factors</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1978</creationdate><recordtype>article</recordtype><recordid>eNo9kEFPwzAMhSMEEmVwR-KSP9ARN0mbHsc0tkkTSKycS5o6U9DWTkl3gF9PxgYnP8vv2fJHyD2wMQArH6uX9RjKQo0Fz0qZwwVJQEqVgizUJUkYA5WWoiyvyU0In7EVksmEfCy0bzsMgU5COHjdGaTTvguuRa8HFxW1vaervtukFfodXfad-3bdhr7p1v066MxaNEOgUT65fb_Vnq4HfzDDwWO4JVdWbwPeneuIvD_PqukiXb3Ol9PJKjVZDkOqlEAmGlAcCikUIgJkuVWCcyZai0qCaGzGudRFZuJnjWyUwcJiDAiZ8xFhp73G9yF4tPXeu532XzWw-kiojoTqI6H6TChGHk4RF8_92_-mP4rlYr4</recordid><startdate>19780101</startdate><enddate>19780101</enddate><creator>Hart, Arthur R.</creator><creator>Smyth, John B.</creator><creator>van Lint, Victor A. 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J.</au><au>Snowden, Donald P.</au><au>Leadon, Roland E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Hardness Assurance Considerations for Long-Term Ionizing Radiation Effects on Bipolar Structures</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>1978-01-01</date><risdate>1978</risdate><volume>25</volume><issue>6</issue><spage>1502</spage><epage>1507</epage><pages>1502-1507</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>The purpose of this work was to assess the theoretical understanding of long-term ionization effects in semiconductor bipolar devices in support of developing hardness assurance techniques. The principal effort was directed at studying transistor gain degradation mechanisms by use of models relating semiconductor physical and electrical parameters to surface properties. Ionizing radiation effects on surface properties were used to identify critical physical parameters for use in hardness assurance procedures. Model implications and predictions were then compared with existing data to evaluate their accuracy and usefulness as a hardness assurance tool.</abstract><pub>IEEE</pub><doi>10.1109/TNS.1978.4329561</doi><tpages>6</tpages></addata></record> |
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| identifier | ISSN: 0018-9499 |
| ispartof | IEEE transactions on nuclear science, 1978-01, Vol.25 (6), p.1502-1507 |
| issn | 0018-9499 1558-1578 |
| language | eng |
| recordid | cdi_ieee_primary_4329561 |
| source | IEEE Electronic Library (IEL) |
| subjects | Bipolar transistors Charge carrier processes Degradation Electron traps Energy capture Interface states Ionization Ionizing radiation Lead compounds Mechanical factors |
| title | Hardness Assurance Considerations for Long-Term Ionizing Radiation Effects on Bipolar Structures |
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