Design Approach to Radiation-Hardened I2L Gate Arrays
Conventional I2L structures are considered for the design of radiation-hardened I2L gate arrays, and design guidelines have been developed for this purpose. It is concluded that the parallel injector design offers the bestperformance in terms of speed, processing simplicity and radiation hardness. P...
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| Veröffentlicht in: | IEEE transactions on nuclear science 1978-01, Vol.25 (6), p.1494-1501 |
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| container_end_page | 1501 |
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| container_issue | 6 |
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| container_title | IEEE transactions on nuclear science |
| container_volume | 25 |
| creator | Bahraman, Ali Chang, Stephen Romeo, Donald Schuegraf, Klaus |
| description | Conventional I2L structures are considered for the design of radiation-hardened I2L gate arrays, and design guidelines have been developed for this purpose. It is concluded that the parallel injector design offers the bestperformance in terms of speed, processing simplicity and radiation hardness. Performance data achieved for the gate arrays include a minimum delay time of 7.5 ns for the basic 4-collector inverter of the array, neutron failure threshold of ~3 × 1013 n/cm2, and dose rate upset threshold of ~5 × 109 rads(Si)/s. |
| doi_str_mv | 10.1109/TNS.1978.4329560 |
| format | Article |
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It is concluded that the parallel injector design offers the bestperformance in terms of speed, processing simplicity and radiation hardness. 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It is concluded that the parallel injector design offers the bestperformance in terms of speed, processing simplicity and radiation hardness. 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It is concluded that the parallel injector design offers the bestperformance in terms of speed, processing simplicity and radiation hardness. Performance data achieved for the gate arrays include a minimum delay time of 7.5 ns for the basic 4-collector inverter of the array, neutron failure threshold of ~3 × 1013 n/cm2, and dose rate upset threshold of ~5 × 109 rads(Si)/s.</abstract><pub>IEEE</pub><doi>10.1109/TNS.1978.4329560</doi><tpages>8</tpages></addata></record> |
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| ispartof | IEEE transactions on nuclear science, 1978-01, Vol.25 (6), p.1494-1501 |
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| language | eng |
| recordid | cdi_ieee_primary_4329560 |
| source | IEEE Electronic Library (IEL) |
| subjects | Aerospace electronics Circuits Current measurement Degradation Delay effects Epitaxial layers Neutrons Performance gain Time measurement Voltage |
| title | Design Approach to Radiation-Hardened I2L Gate Arrays |
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