A Radiation-Hard CMOS/SOS ALU
A radiation-hard CMOS/SOS technology has been used to fabricate a complex LSI circuit containing over 2200 transistors. The circuit is an eight bit wide arithmetic and logic unit (ALU) slice. This paper describes the results of electrical, temperature, and radiation tests on the ALU circuit. An inst...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on nuclear science 1977-01, Vol.24 (6), p.2181-2184 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 2184 |
|---|---|
| container_issue | 6 |
| container_start_page | 2181 |
| container_title | IEEE transactions on nuclear science |
| container_volume | 24 |
| creator | Kjar, R. A. Martinez, M. Waskiewicz, A. E. |
| description | A radiation-hard CMOS/SOS technology has been used to fabricate a complex LSI circuit containing over 2200 transistors. The circuit is an eight bit wide arithmetic and logic unit (ALU) slice. This paper describes the results of electrical, temperature, and radiation tests on the ALU circuit. An instruction cycle-time of less than 240 ns was achieved for nominal operation at +11V and 25° C. This time increases to 300 ns at 125° C. After irradiation to 106 rads (Si) under bias, operation was degraded only slightly. The 25° C and 125° C postradiation cycle times were within 320 and 360 ns, respectively. Radiation tolerance from part to part and lot to lot was excellent, thus demonstrating the applicability of radiation hard CMOS/SOS to LSI circuitry. |
| doi_str_mv | 10.1109/TNS.1977.4329188 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref_RIE</sourceid><recordid>TN_cdi_ieee_primary_4329188</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4329188</ieee_id><sourcerecordid>10_1109_TNS_1977_4329188</sourcerecordid><originalsourceid>FETCH-LOGICAL-c261t-bfa44c8ecaa610e7f321f03bb6c90ccd905c8f2fea30c394d7bd7541194a3f493</originalsourceid><addsrcrecordid>eNo9j19LwzAUxYMoWDffBRH6BdLd2yRN7mMp6oRqYd2eQ5omUFEn7V789nZs-nQ4nD_wY-wOIUMEWm3f2gxJ60yKnNCYC5agUoaj0uaSJQBoOEmia3YzTe-zlQpUwh7KdOP6wR2G_Rdfu7FPq9emXbVNm5b1bsmuovuYwu1ZF2z39Lit1rxunl-qsuY-L_DAu-ik9CZ45wqEoKPIMYLousITeN8TKG9iHoMT4AXJXne9VhKRpBNRklgwOP36cT9NY4j2exw-3fhjEewRz8549ohnz3jz5P40GUII__W_9BdKYkk6</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>A Radiation-Hard CMOS/SOS ALU</title><source>IEEE Electronic Library (IEL)</source><creator>Kjar, R. A. ; Martinez, M. ; Waskiewicz, A. E.</creator><creatorcontrib>Kjar, R. A. ; Martinez, M. ; Waskiewicz, A. E.</creatorcontrib><description>A radiation-hard CMOS/SOS technology has been used to fabricate a complex LSI circuit containing over 2200 transistors. The circuit is an eight bit wide arithmetic and logic unit (ALU) slice. This paper describes the results of electrical, temperature, and radiation tests on the ALU circuit. An instruction cycle-time of less than 240 ns was achieved for nominal operation at +11V and 25° C. This time increases to 300 ns at 125° C. After irradiation to 106 rads (Si) under bias, operation was degraded only slightly. The 25° C and 125° C postradiation cycle times were within 320 and 360 ns, respectively. Radiation tolerance from part to part and lot to lot was excellent, thus demonstrating the applicability of radiation hard CMOS/SOS to LSI circuitry.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.1977.4329188</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>IEEE</publisher><subject>Arithmetic ; Circuit testing ; Clocks ; CMOS technology ; Decoding ; Large scale integration ; Logic functions ; Missiles ; Multiplexing ; Space technology</subject><ispartof>IEEE transactions on nuclear science, 1977-01, Vol.24 (6), p.2181-2184</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c261t-bfa44c8ecaa610e7f321f03bb6c90ccd905c8f2fea30c394d7bd7541194a3f493</citedby><cites>FETCH-LOGICAL-c261t-bfa44c8ecaa610e7f321f03bb6c90ccd905c8f2fea30c394d7bd7541194a3f493</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4329188$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27922,27923,54756</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4329188$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kjar, R. A.</creatorcontrib><creatorcontrib>Martinez, M.</creatorcontrib><creatorcontrib>Waskiewicz, A. E.</creatorcontrib><title>A Radiation-Hard CMOS/SOS ALU</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>A radiation-hard CMOS/SOS technology has been used to fabricate a complex LSI circuit containing over 2200 transistors. The circuit is an eight bit wide arithmetic and logic unit (ALU) slice. This paper describes the results of electrical, temperature, and radiation tests on the ALU circuit. An instruction cycle-time of less than 240 ns was achieved for nominal operation at +11V and 25° C. This time increases to 300 ns at 125° C. After irradiation to 106 rads (Si) under bias, operation was degraded only slightly. The 25° C and 125° C postradiation cycle times were within 320 and 360 ns, respectively. Radiation tolerance from part to part and lot to lot was excellent, thus demonstrating the applicability of radiation hard CMOS/SOS to LSI circuitry.</description><subject>Arithmetic</subject><subject>Circuit testing</subject><subject>Clocks</subject><subject>CMOS technology</subject><subject>Decoding</subject><subject>Large scale integration</subject><subject>Logic functions</subject><subject>Missiles</subject><subject>Multiplexing</subject><subject>Space technology</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1977</creationdate><recordtype>article</recordtype><recordid>eNo9j19LwzAUxYMoWDffBRH6BdLd2yRN7mMp6oRqYd2eQ5omUFEn7V789nZs-nQ4nD_wY-wOIUMEWm3f2gxJ60yKnNCYC5agUoaj0uaSJQBoOEmia3YzTe-zlQpUwh7KdOP6wR2G_Rdfu7FPq9emXbVNm5b1bsmuovuYwu1ZF2z39Lit1rxunl-qsuY-L_DAu-ik9CZ45wqEoKPIMYLousITeN8TKG9iHoMT4AXJXne9VhKRpBNRklgwOP36cT9NY4j2exw-3fhjEewRz8549ohnz3jz5P40GUII__W_9BdKYkk6</recordid><startdate>19770101</startdate><enddate>19770101</enddate><creator>Kjar, R. A.</creator><creator>Martinez, M.</creator><creator>Waskiewicz, A. E.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19770101</creationdate><title>A Radiation-Hard CMOS/SOS ALU</title><author>Kjar, R. A. ; Martinez, M. ; Waskiewicz, A. E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c261t-bfa44c8ecaa610e7f321f03bb6c90ccd905c8f2fea30c394d7bd7541194a3f493</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1977</creationdate><topic>Arithmetic</topic><topic>Circuit testing</topic><topic>Clocks</topic><topic>CMOS technology</topic><topic>Decoding</topic><topic>Large scale integration</topic><topic>Logic functions</topic><topic>Missiles</topic><topic>Multiplexing</topic><topic>Space technology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kjar, R. A.</creatorcontrib><creatorcontrib>Martinez, M.</creatorcontrib><creatorcontrib>Waskiewicz, A. E.</creatorcontrib><collection>CrossRef</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kjar, R. A.</au><au>Martinez, M.</au><au>Waskiewicz, A. E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Radiation-Hard CMOS/SOS ALU</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>1977-01-01</date><risdate>1977</risdate><volume>24</volume><issue>6</issue><spage>2181</spage><epage>2184</epage><pages>2181-2184</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>A radiation-hard CMOS/SOS technology has been used to fabricate a complex LSI circuit containing over 2200 transistors. The circuit is an eight bit wide arithmetic and logic unit (ALU) slice. This paper describes the results of electrical, temperature, and radiation tests on the ALU circuit. An instruction cycle-time of less than 240 ns was achieved for nominal operation at +11V and 25° C. This time increases to 300 ns at 125° C. After irradiation to 106 rads (Si) under bias, operation was degraded only slightly. The 25° C and 125° C postradiation cycle times were within 320 and 360 ns, respectively. Radiation tolerance from part to part and lot to lot was excellent, thus demonstrating the applicability of radiation hard CMOS/SOS to LSI circuitry.</abstract><pub>IEEE</pub><doi>10.1109/TNS.1977.4329188</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9499 |
| ispartof | IEEE transactions on nuclear science, 1977-01, Vol.24 (6), p.2181-2184 |
| issn | 0018-9499 1558-1578 |
| language | eng |
| recordid | cdi_ieee_primary_4329188 |
| source | IEEE Electronic Library (IEL) |
| subjects | Arithmetic Circuit testing Clocks CMOS technology Decoding Large scale integration Logic functions Missiles Multiplexing Space technology |
| title | A Radiation-Hard CMOS/SOS ALU |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T04%3A49%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20Radiation-Hard%20CMOS/SOS%20ALU&rft.jtitle=IEEE%20transactions%20on%20nuclear%20science&rft.au=Kjar,%20R.%20A.&rft.date=1977-01-01&rft.volume=24&rft.issue=6&rft.spage=2181&rft.epage=2184&rft.pages=2181-2184&rft.issn=0018-9499&rft.eissn=1558-1578&rft.coden=IETNAE&rft_id=info:doi/10.1109/TNS.1977.4329188&rft_dat=%3Ccrossref_RIE%3E10_1109_TNS_1977_4329188%3C/crossref_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4329188&rfr_iscdi=true |