Effects of Radiation on the Noise Performance of Transistors

The predominant transistor noise sources are surveyed and related to both surface and bulk permanent damage radiation effects. The medium and high frequency noise performance of FET and bipolar transistors is not strongly affected by radiation until the devices themselves begin to fail. Low frequenc...

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Veröffentlicht in:	IEEE transactions on nuclear science 1972-01, Vol.19 (2), p.321-326
1. Verfasser:	Lauritzen, Peter O.
Format:	Artikel
Sprache:	eng
Schlagworte:	1f noise Circuit noise Frequency Integrated circuit noise Low-frequency noise MOSFETs Noise generators Photoconductivity Radiation effects Semiconductor device noise
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