Progress in the fabrication of γ-ray detectors from high purity germanium
A planar detector with a depletion layer width of 8mm has been fabricated from high purity germanium. A total system resolution of 2.4 keV at 1.33MeV is obtained with 600 volts bias on this detector. Another detector with a 3mm thick depletion region which was operated at 2000 volts bias yielded a s...
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| Veröffentlicht in: | IEEE transactions on nuclear science 1971-02, Vol.18 (1), p.166-169 |
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| container_title | IEEE transactions on nuclear science |
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| creator | Baertsch, R. D. |
| description | A planar detector with a depletion layer width of 8mm has been fabricated from high purity germanium. A total system resolution of 2.4 keV at 1.33MeV is obtained with 600 volts bias on this detector. Another detector with a 3mm thick depletion region which was operated at 2000 volts bias yielded a system resolution of 1.65 keV at 1.33 MeV. Thin window detectors have been fabricated by using a glow discharge of BF 3 or PF 5 . This technique has also been used to form ohmic contacts on high purity germanium. |
| doi_str_mv | 10.1109/TNS.1971.4325858 |
| format | Article |
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D.</creator><creatorcontrib>Baertsch, R. D.</creatorcontrib><description>A planar detector with a depletion layer width of 8mm has been fabricated from high purity germanium. A total system resolution of 2.4 keV at 1.33MeV is obtained with 600 volts bias on this detector. Another detector with a 3mm thick depletion region which was operated at 2000 volts bias yielded a system resolution of 1.65 keV at 1.33 MeV. Thin window detectors have been fabricated by using a glow discharge of BF 3 or PF 5 . This technique has also been used to form ohmic contacts on high purity germanium.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.1971.4325858</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>IEEE</publisher><subject>Annealing ; Detectors ; Electrical resistance measurement ; Fabrication ; Germanium ; Glow discharges ; Ohmic contacts ; Surface discharges ; Surface resistance ; Voltage</subject><ispartof>IEEE transactions on nuclear science, 1971-02, Vol.18 (1), p.166-169</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c193t-fa3edff161fc0f403b25ce2b9486d30909a8571336ab5d3190872b0127a3b69c3</citedby><cites>FETCH-LOGICAL-c193t-fa3edff161fc0f403b25ce2b9486d30909a8571336ab5d3190872b0127a3b69c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4325858$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54737</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4325858$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Baertsch, R. D.</creatorcontrib><title>Progress in the fabrication of γ-ray detectors from high purity germanium</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>A planar detector with a depletion layer width of 8mm has been fabricated from high purity germanium. A total system resolution of 2.4 keV at 1.33MeV is obtained with 600 volts bias on this detector. Another detector with a 3mm thick depletion region which was operated at 2000 volts bias yielded a system resolution of 1.65 keV at 1.33 MeV. Thin window detectors have been fabricated by using a glow discharge of BF 3 or PF 5 . This technique has also been used to form ohmic contacts on high purity germanium.</description><subject>Annealing</subject><subject>Detectors</subject><subject>Electrical resistance measurement</subject><subject>Fabrication</subject><subject>Germanium</subject><subject>Glow discharges</subject><subject>Ohmic contacts</subject><subject>Surface discharges</subject><subject>Surface resistance</subject><subject>Voltage</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1971</creationdate><recordtype>article</recordtype><recordid>eNo9kM1OhDAUhRujiTi6N3HTFwDvpRTapZmoo5moieOalNJCjcCkZRY8l-_hM8lkRlcnJ-dn8RFyjZAggrzdvLwnKAtMMpZywcUJiZBzESMvxCmJAFDEMpPynFyE8DnbjAOPyPObHxpvQqCup2NrqFWVd1qNbujpYOnPd-zVRGszGj0OPlDrh462rmnpdufdONHG-E71btddkjOrvoK5OuqCfDzcb5areP36-LS8W8caJRtjq5iprcUcrQabAatSrk1ayUzkNQMJUgleIGO5qnjNUIIo0gowLRSrcqnZgsDhV_shBG9sufWuU34qEco9i3JmUe5ZlEcW8-TmMHHGmP_6X_oLsI9brg</recordid><startdate>197102</startdate><enddate>197102</enddate><creator>Baertsch, R. D.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>197102</creationdate><title>Progress in the fabrication of γ-ray detectors from high purity germanium</title><author>Baertsch, R. D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c193t-fa3edff161fc0f403b25ce2b9486d30909a8571336ab5d3190872b0127a3b69c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1971</creationdate><topic>Annealing</topic><topic>Detectors</topic><topic>Electrical resistance measurement</topic><topic>Fabrication</topic><topic>Germanium</topic><topic>Glow discharges</topic><topic>Ohmic contacts</topic><topic>Surface discharges</topic><topic>Surface resistance</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Baertsch, R. D.</creatorcontrib><collection>CrossRef</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Baertsch, R. D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Progress in the fabrication of γ-ray detectors from high purity germanium</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>1971-02</date><risdate>1971</risdate><volume>18</volume><issue>1</issue><spage>166</spage><epage>169</epage><pages>166-169</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>A planar detector with a depletion layer width of 8mm has been fabricated from high purity germanium. A total system resolution of 2.4 keV at 1.33MeV is obtained with 600 volts bias on this detector. Another detector with a 3mm thick depletion region which was operated at 2000 volts bias yielded a system resolution of 1.65 keV at 1.33 MeV. Thin window detectors have been fabricated by using a glow discharge of BF 3 or PF 5 . This technique has also been used to form ohmic contacts on high purity germanium.</abstract><pub>IEEE</pub><doi>10.1109/TNS.1971.4325858</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9499 |
| ispartof | IEEE transactions on nuclear science, 1971-02, Vol.18 (1), p.166-169 |
| issn | 0018-9499 1558-1578 |
| language | eng |
| recordid | cdi_ieee_primary_4325858 |
| source | IEEE Electronic Library (IEL) |
| subjects | Annealing Detectors Electrical resistance measurement Fabrication Germanium Glow discharges Ohmic contacts Surface discharges Surface resistance Voltage |
| title | Progress in the fabrication of γ-ray detectors from high purity germanium |
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