Constant Bias Stress Effects on Threshold Voltage of Pentacene Thin-Film Transistors Employing Polyvinylphenol Gate Dielectric
We investigate the stability of pentacene thin-film transistors using a poly(4-vinylphenol) (PVP) gate dielectric under constant bias stress. The threshold voltage is shifted to the positive gate voltage when stressed in air, as caused by water vapors in the PVP gate dielectric. Meanwhile, we observ...
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| Veröffentlicht in: | IEEE electron device letters 2007-10, Vol.28 (10), p.874-876 |
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| container_end_page | 876 |
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| container_title | IEEE electron device letters |
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| creator | Kim, Tae Ho Song, Chung Kun Park, Jin Seong Suh, Min Chul |
| description | We investigate the stability of pentacene thin-film transistors using a poly(4-vinylphenol) (PVP) gate dielectric under constant bias stress. The threshold voltage is shifted to the positive gate voltage when stressed in air, as caused by water vapors in the PVP gate dielectric. Meanwhile, we observe a negative shift under stress in vacuum. This shift is attributed to charges trapped in deep electronic states in pentacene near the gate interface. We propose a model for the negative shift of the threshold voltage and extract the hole concentration 4.5 x 10 11 cm -2 that is needed to avoid the critical degradation, resulting in a W/L larger than 40. |
| doi_str_mv | 10.1109/LED.2007.904245 |
| format | Article |
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The threshold voltage is shifted to the positive gate voltage when stressed in air, as caused by water vapors in the PVP gate dielectric. Meanwhile, we observe a negative shift under stress in vacuum. This shift is attributed to charges trapped in deep electronic states in pentacene near the gate interface. We propose a model for the negative shift of the threshold voltage and extract the hole concentration 4.5 x 10 11 cm -2 that is needed to avoid the critical degradation, resulting in a W/L larger than 40.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2007.904245</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Bias ; Circuit stability ; Dielectric constant ; Dielectrics ; Displays ; Electronic devices ; Electronics ; Exact sciences and technology ; Gates ; interfaces ; Organic semiconductors ; Organic thin film transistors ; Pentacene ; Research and development ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Stress ; Stresses ; Thin film transistors ; Thin films ; Threshold voltage ; Transistors</subject><ispartof>IEEE electron device letters, 2007-10, Vol.28 (10), p.874-876</ispartof><rights>2007 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2007</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c448t-6c4e44ddb33919c9883f6f71ad642280b514ae288c534aec8232b4566b0997733</citedby><cites>FETCH-LOGICAL-c448t-6c4e44ddb33919c9883f6f71ad642280b514ae288c534aec8232b4566b0997733</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4317660$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4317660$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=19113315$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kim, Tae Ho</creatorcontrib><creatorcontrib>Song, Chung Kun</creatorcontrib><creatorcontrib>Park, Jin Seong</creatorcontrib><creatorcontrib>Suh, Min Chul</creatorcontrib><title>Constant Bias Stress Effects on Threshold Voltage of Pentacene Thin-Film Transistors Employing Polyvinylphenol Gate Dielectric</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>We investigate the stability of pentacene thin-film transistors using a poly(4-vinylphenol) (PVP) gate dielectric under constant bias stress. The threshold voltage is shifted to the positive gate voltage when stressed in air, as caused by water vapors in the PVP gate dielectric. Meanwhile, we observe a negative shift under stress in vacuum. This shift is attributed to charges trapped in deep electronic states in pentacene near the gate interface. We propose a model for the negative shift of the threshold voltage and extract the hole concentration 4.5 x 10 11 cm -2 that is needed to avoid the critical degradation, resulting in a W/L larger than 40.</description><subject>Applied sciences</subject><subject>Bias</subject><subject>Circuit stability</subject><subject>Dielectric constant</subject><subject>Dielectrics</subject><subject>Displays</subject><subject>Electronic devices</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gates</subject><subject>interfaces</subject><subject>Organic semiconductors</subject><subject>Organic thin film transistors</subject><subject>Pentacene</subject><subject>Research and development</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Stress</subject><subject>Stresses</subject><subject>Thin film transistors</subject><subject>Thin films</subject><subject>Threshold voltage</subject><subject>Transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kUFvEzEQhS1EJULLuQcuFhKIy6aetddrH2maFqRIVCL0unKc2caVYwfbQcqF346jVCBx4OSR53tvNPMIuQQ2BWD6ajG_mbaM9VPNRCu6F2QCXaca1kn-kkxYL6DhwOQr8jrnJ8ZAiF5MyK9ZDLmYUOi1M5l-KwlzpvNxRFsyjYEuN_VnE_2aPkRfzCPSONJ7DMVYDFjbLjS3zm_pMpmQXS4xVf125-PBhUd6H_3hpwsHv9tgiJ7emYL0xqGv_snZC3I2Gp_xzfN7Tr7fzpezz83i692X2adFY4VQpZFWoBDr9YpzDdpqpfgoxx7MWoq2VWzVgTDYKmU7XgurWt6uRCflimnd95yfkw8n312KP_aYy7B12aL3JmDc54HXMbzTqoIf_wsCA6a0ZAAVffcP-hT3KdQ1Bg0taMakqNDVCbIp5pxwHHbJbU06VKfhmNtQcxuOuQ2n3Kri_bOtydb4sZ7VuvxXputoDkfu7YlziPinLTj0UjL-G83uoDs</recordid><startdate>20071001</startdate><enddate>20071001</enddate><creator>Kim, Tae Ho</creator><creator>Song, Chung Kun</creator><creator>Park, Jin Seong</creator><creator>Suh, Min Chul</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20071001</creationdate><title>Constant Bias Stress Effects on Threshold Voltage of Pentacene Thin-Film Transistors Employing Polyvinylphenol Gate Dielectric</title><author>Kim, Tae Ho ; Song, Chung Kun ; Park, Jin Seong ; Suh, Min Chul</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c448t-6c4e44ddb33919c9883f6f71ad642280b514ae288c534aec8232b4566b0997733</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Applied sciences</topic><topic>Bias</topic><topic>Circuit stability</topic><topic>Dielectric constant</topic><topic>Dielectrics</topic><topic>Displays</topic><topic>Electronic devices</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gates</topic><topic>interfaces</topic><topic>Organic semiconductors</topic><topic>Organic thin film transistors</topic><topic>Pentacene</topic><topic>Research and development</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Stress</topic><topic>Stresses</topic><topic>Thin film transistors</topic><topic>Thin films</topic><topic>Threshold voltage</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Tae Ho</creatorcontrib><creatorcontrib>Song, Chung Kun</creatorcontrib><creatorcontrib>Park, Jin Seong</creatorcontrib><creatorcontrib>Suh, Min Chul</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kim, Tae Ho</au><au>Song, Chung Kun</au><au>Park, Jin Seong</au><au>Suh, Min Chul</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Constant Bias Stress Effects on Threshold Voltage of Pentacene Thin-Film Transistors Employing Polyvinylphenol Gate Dielectric</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2007-10-01</date><risdate>2007</risdate><volume>28</volume><issue>10</issue><spage>874</spage><epage>876</epage><pages>874-876</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>We investigate the stability of pentacene thin-film transistors using a poly(4-vinylphenol) (PVP) gate dielectric under constant bias stress. The threshold voltage is shifted to the positive gate voltage when stressed in air, as caused by water vapors in the PVP gate dielectric. Meanwhile, we observe a negative shift under stress in vacuum. This shift is attributed to charges trapped in deep electronic states in pentacene near the gate interface. We propose a model for the negative shift of the threshold voltage and extract the hole concentration 4.5 x 10 11 cm -2 that is needed to avoid the critical degradation, resulting in a W/L larger than 40.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2007.904245</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE electron device letters, 2007-10, Vol.28 (10), p.874-876 |
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| subjects | Applied sciences Bias Circuit stability Dielectric constant Dielectrics Displays Electronic devices Electronics Exact sciences and technology Gates interfaces Organic semiconductors Organic thin film transistors Pentacene Research and development Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stress Stresses Thin film transistors Thin films Threshold voltage Transistors |
| title | Constant Bias Stress Effects on Threshold Voltage of Pentacene Thin-Film Transistors Employing Polyvinylphenol Gate Dielectric |
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