A High Power CMOS Switch Using Substrate Body Switching in Multistack Structure
A novel high power CMOS RF switch using the substrate body switching technique in a multistack structure is designed, implemented, and characterized in a standard 0.18- triple-well CMOS process. One of the stacked devices in the receive side has a body switch at the bulk port in order to provide hig...
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| Veröffentlicht in: | IEEE microwave and wireless components letters 2007-09, Vol.17 (9), p.682-684 |
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| container_issue | 9 |
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| container_title | IEEE microwave and wireless components letters |
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| creator | Minsik Ahn Byung Sung Kim Chang-Ho Lee Laskar, J. |
| description | A novel high power CMOS RF switch using the substrate body switching technique in a multistack structure is designed, implemented, and characterized in a standard 0.18- triple-well CMOS process. One of the stacked devices in the receive side has a body switch at the bulk port in order to provide high power handling capability to the transmit switch side without compromising insertion loss to the receiver switch. The body switch connected to the bulk port at one of the receiver switches turns on in mode to minimize leakage current into path. In the meanwhile, that switch turns off in mode so that the bulk port can have body floating to reduce leakage current to substrates. Experimental data show that the switch using the body-switching technique has 1 dB of 31.5 dBm that is 2.5 dB higher than the one using the body floating technique. Insertion loss is 1.5 dB at 1.9 GHz in the transmit switch and 1.8 dB in the receiver switch. Isolation is less than 30 dB for switch and 20 dB for switch at 1.9 GHz. |
| doi_str_mv | 10.1109/LMWC.2007.903462 |
| format | Article |
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One of the stacked devices in the receive side has a body switch at the bulk port in order to provide high power handling capability to the transmit switch side without compromising insertion loss to the receiver switch. The body switch connected to the bulk port at one of the receiver switches turns on in mode to minimize leakage current into path. In the meanwhile, that switch turns off in mode so that the bulk port can have body floating to reduce leakage current to substrates. Experimental data show that the switch using the body-switching technique has 1 dB of 31.5 dBm that is 2.5 dB higher than the one using the body floating technique. Insertion loss is 1.5 dB at 1.9 GHz in the transmit switch and 1.8 dB in the receiver switch. Isolation is less than 30 dB for switch and 20 dB for switch at 1.9 GHz.</description><identifier>ISSN: 1531-1309</identifier><identifier>ISSN: 2771-957X</identifier><identifier>EISSN: 1558-1764</identifier><identifier>EISSN: 2771-9588</identifier><identifier>DOI: 10.1109/LMWC.2007.903462</identifier><identifier>CODEN: IMWCBJ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Body-floating technique ; Breakdown voltage ; CMOS ; CMOS process ; CMOS switch ; CMOS technology ; Design. Technologies. Operation analysis. Testing ; Electronics ; Exact sciences and technology ; Floating structures ; High power amplifiers ; high power handling capability ; Insertion loss ; Integrated circuits ; Leakage current ; Low-noise amplifiers ; Noise levels ; Ports ; Propagation losses ; Radio frequency ; Radiocommunications ; Receivers ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; substrate body switching ; Switches ; Switching ; Telecommunications ; Telecommunications and information theory ; Transmitters. Receivers</subject><ispartof>IEEE microwave and wireless components letters, 2007-09, Vol.17 (9), p.682-684</ispartof><rights>2007 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2007</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c449t-9560c5dd54a0a175c73f20245bccbc0b5e5524794fb6593d2c2ecc18c8d14ed03</citedby><cites>FETCH-LOGICAL-c449t-9560c5dd54a0a175c73f20245bccbc0b5e5524794fb6593d2c2ecc18c8d14ed03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4295110$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54737</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4295110$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=19061600$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Minsik Ahn</creatorcontrib><creatorcontrib>Byung Sung Kim</creatorcontrib><creatorcontrib>Chang-Ho Lee</creatorcontrib><creatorcontrib>Laskar, J.</creatorcontrib><title>A High Power CMOS Switch Using Substrate Body Switching in Multistack Structure</title><title>IEEE microwave and wireless components letters</title><addtitle>LMWC</addtitle><description>A novel high power CMOS RF switch using the substrate body switching technique in a multistack structure is designed, implemented, and characterized in a standard 0.18- triple-well CMOS process. One of the stacked devices in the receive side has a body switch at the bulk port in order to provide high power handling capability to the transmit switch side without compromising insertion loss to the receiver switch. The body switch connected to the bulk port at one of the receiver switches turns on in mode to minimize leakage current into path. In the meanwhile, that switch turns off in mode so that the bulk port can have body floating to reduce leakage current to substrates. Experimental data show that the switch using the body-switching technique has 1 dB of 31.5 dBm that is 2.5 dB higher than the one using the body floating technique. Insertion loss is 1.5 dB at 1.9 GHz in the transmit switch and 1.8 dB in the receiver switch. Isolation is less than 30 dB for switch and 20 dB for switch at 1.9 GHz.</description><subject>Applied sciences</subject><subject>Body-floating technique</subject><subject>Breakdown voltage</subject><subject>CMOS</subject><subject>CMOS process</subject><subject>CMOS switch</subject><subject>CMOS technology</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Floating structures</subject><subject>High power amplifiers</subject><subject>high power handling capability</subject><subject>Insertion loss</subject><subject>Integrated circuits</subject><subject>Leakage current</subject><subject>Low-noise amplifiers</subject><subject>Noise levels</subject><subject>Ports</subject><subject>Propagation losses</subject><subject>Radio frequency</subject><subject>Radiocommunications</subject><subject>Receivers</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>substrate body switching</subject><subject>Switches</subject><subject>Switching</subject><subject>Telecommunications</subject><subject>Telecommunications and information theory</subject><subject>Transmitters. Receivers</subject><issn>1531-1309</issn><issn>2771-957X</issn><issn>1558-1764</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kc1r3DAQxU1JoUnae6EXEUhz8nb0aemYLs0H7LKFbehRyGM5UerYiSQT8t_XZpcWcshpBt5vHvN4RfGZwoJSMN9W69_LBQOoFga4UOxdcUil1CWtlDiYd05LysF8KI5SugegQgt6WGzOyVW4vSM_h2cfyXK92ZLtc8h4R25S6G_JdqxTji578n1oXvbaLISerMcuh5Qd_iHbHEfMY_Qfi_et65L_tJ_Hxc3Fj1_Lq3K1ubxenq9KFMLk0kgFKJtGCgeOVhIr3jJgQtaINUItvZRMVEa0tZKGNwyZR6QadUOFb4AfF2c738c4PI0-ZfsQEvquc70fxmS1BqWlMnoiv75J8umhinE2gSevwPthjP2UwmolFEhGxQTBDsI4pBR9ax9jeHDxxVKwcxF2LsLORdhdEdPJ6d7XJXRdG12PIf2_M6CogjnSlx0XvPf_ZMGMnHz5Xwtcjzo</recordid><startdate>20070901</startdate><enddate>20070901</enddate><creator>Minsik Ahn</creator><creator>Byung Sung Kim</creator><creator>Chang-Ho Lee</creator><creator>Laskar, J.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20070901</creationdate><title>A High Power CMOS Switch Using Substrate Body Switching in Multistack Structure</title><author>Minsik Ahn ; Byung Sung Kim ; Chang-Ho Lee ; Laskar, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c449t-9560c5dd54a0a175c73f20245bccbc0b5e5524794fb6593d2c2ecc18c8d14ed03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Applied sciences</topic><topic>Body-floating technique</topic><topic>Breakdown voltage</topic><topic>CMOS</topic><topic>CMOS process</topic><topic>CMOS switch</topic><topic>CMOS technology</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Floating structures</topic><topic>High power amplifiers</topic><topic>high power handling capability</topic><topic>Insertion loss</topic><topic>Integrated circuits</topic><topic>Leakage current</topic><topic>Low-noise amplifiers</topic><topic>Noise levels</topic><topic>Ports</topic><topic>Propagation losses</topic><topic>Radio frequency</topic><topic>Radiocommunications</topic><topic>Receivers</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>substrate body switching</topic><topic>Switches</topic><topic>Switching</topic><topic>Telecommunications</topic><topic>Telecommunications and information theory</topic><topic>Transmitters. Receivers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Minsik Ahn</creatorcontrib><creatorcontrib>Byung Sung Kim</creatorcontrib><creatorcontrib>Chang-Ho Lee</creatorcontrib><creatorcontrib>Laskar, J.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE microwave and wireless components letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Minsik Ahn</au><au>Byung Sung Kim</au><au>Chang-Ho Lee</au><au>Laskar, J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A High Power CMOS Switch Using Substrate Body Switching in Multistack Structure</atitle><jtitle>IEEE microwave and wireless components letters</jtitle><stitle>LMWC</stitle><date>2007-09-01</date><risdate>2007</risdate><volume>17</volume><issue>9</issue><spage>682</spage><epage>684</epage><pages>682-684</pages><issn>1531-1309</issn><issn>2771-957X</issn><eissn>1558-1764</eissn><eissn>2771-9588</eissn><coden>IMWCBJ</coden><abstract>A novel high power CMOS RF switch using the substrate body switching technique in a multistack structure is designed, implemented, and characterized in a standard 0.18- triple-well CMOS process. One of the stacked devices in the receive side has a body switch at the bulk port in order to provide high power handling capability to the transmit switch side without compromising insertion loss to the receiver switch. The body switch connected to the bulk port at one of the receiver switches turns on in mode to minimize leakage current into path. In the meanwhile, that switch turns off in mode so that the bulk port can have body floating to reduce leakage current to substrates. Experimental data show that the switch using the body-switching technique has 1 dB of 31.5 dBm that is 2.5 dB higher than the one using the body floating technique. Insertion loss is 1.5 dB at 1.9 GHz in the transmit switch and 1.8 dB in the receiver switch. Isolation is less than 30 dB for switch and 20 dB for switch at 1.9 GHz.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LMWC.2007.903462</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE microwave and wireless components letters, 2007-09, Vol.17 (9), p.682-684 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Body-floating technique Breakdown voltage CMOS CMOS process CMOS switch CMOS technology Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Floating structures High power amplifiers high power handling capability Insertion loss Integrated circuits Leakage current Low-noise amplifiers Noise levels Ports Propagation losses Radio frequency Radiocommunications Receivers Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices substrate body switching Switches Switching Telecommunications Telecommunications and information theory Transmitters. Receivers |
| title | A High Power CMOS Switch Using Substrate Body Switching in Multistack Structure |
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