A New Soft Self-Clamping Scheme for Improving the Self-Clamped Inductive Switching (SCIS) Capability of Automotive Ignition IGBT

The improvement of self-clamped inductive switching (SCIS) capability of ignition IGBT widely used in automotive coil driver ensures the protection of the ignition IGBT from a severe thermal stress under the abnormal switching condition such as the open secondary. We have proposed and verified a new...

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Hauptverfasser:	In-Hwan Ji, Kyu-Heon Cho, Seung-Chul Lee, Soo-Seong Kim, Kwang-Hoon Oh, Chong-Man Yun, Min-Koo Han
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Automotive engineering Coils Energy loss Ignition Insulated gate bipolar transistors MOSFET circuits Power MOSFET Protection Thermal stresses Voltage
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creator	In-Hwan Ji Kyu-Heon Cho Seung-Chul Lee Soo-Seong Kim Kwang-Hoon Oh Chong-Man Yun Min-Koo Han
description	The improvement of self-clamped inductive switching (SCIS) capability of ignition IGBT widely used in automotive coil driver ensures the protection of the ignition IGBT from a severe thermal stress under the abnormal switching condition such as the open secondary. We have proposed and verified a new self-clamping scheme for improving the self-clamped inductive switching (SCIS) capability of ignition IGBT by employing the collector coupled turn-on of IGBT. The proposed self-clamped IGBT has an additional power MOSFET connected between the gate and collector of main IGBT with a large gate resistance. The additional power MOSFET is turned-on temporarily at the beginning of the self-clamping mode, which increases the collector voltage of main IGBT gradually so that the proposed self-clamped IGBT reduces the hard switching energy loss, which results in improvement of the SCIS capability of main IGBT.
doi_str_mv	10.1109/ISPSD.2007.4294953
format	Conference Proceeding
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The additional power MOSFET is turned-on temporarily at the beginning of the self-clamping mode, which increases the collector voltage of main IGBT gradually so that the proposed self-clamped IGBT reduces the hard switching energy loss, which results in improvement of the SCIS capability of main IGBT.</description><identifier>ISSN: 1063-6854</identifier><identifier>ISBN: 1424410959</identifier><identifier>ISBN: 9781424410958</identifier><identifier>EISSN: 1946-0201</identifier><identifier>EISBN: 1424410967</identifier><identifier>EISBN: 9781424410965</identifier><identifier>DOI: 10.1109/ISPSD.2007.4294953</identifier><language>eng</language><publisher>IEEE</publisher><subject>Automotive engineering ; Coils ; Energy loss ; Ignition ; Insulated gate bipolar transistors ; MOSFET circuits ; Power MOSFET ; Protection ; Thermal stresses ; Voltage</subject><ispartof>Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's, 2007, p.145-148</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4294953$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>310,311,781,785,790,791,2059,27930,54925</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4294953$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>In-Hwan Ji</creatorcontrib><creatorcontrib>Kyu-Heon Cho</creatorcontrib><creatorcontrib>Seung-Chul Lee</creatorcontrib><creatorcontrib>Soo-Seong Kim</creatorcontrib><creatorcontrib>Kwang-Hoon Oh</creatorcontrib><creatorcontrib>Chong-Man Yun</creatorcontrib><creatorcontrib>Min-Koo Han</creatorcontrib><title>A New Soft Self-Clamping Scheme for Improving the Self-Clamped Inductive Switching (SCIS) Capability of Automotive Ignition IGBT</title><title>Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's</title><addtitle>ISPSD</addtitle><description>The improvement of self-clamped inductive switching (SCIS) capability of ignition IGBT widely used in automotive coil driver ensures the protection of the ignition IGBT from a severe thermal stress under the abnormal switching condition such as the open secondary. 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We have proposed and verified a new self-clamping scheme for improving the self-clamped inductive switching (SCIS) capability of ignition IGBT by employing the collector coupled turn-on of IGBT. The proposed self-clamped IGBT has an additional power MOSFET connected between the gate and collector of main IGBT with a large gate resistance. The additional power MOSFET is turned-on temporarily at the beginning of the self-clamping mode, which increases the collector voltage of main IGBT gradually so that the proposed self-clamped IGBT reduces the hard switching energy loss, which results in improvement of the SCIS capability of main IGBT.</abstract><pub>IEEE</pub><doi>10.1109/ISPSD.2007.4294953</doi><tpages>4</tpages></addata></record>
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source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Automotive engineering Coils Energy loss Ignition Insulated gate bipolar transistors MOSFET circuits Power MOSFET Protection Thermal stresses Voltage
title	A New Soft Self-Clamping Scheme for Improving the Self-Clamped Inductive Switching (SCIS) Capability of Automotive Ignition IGBT
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