Combined Method for Two-Dimensional Modeling of MOS-transistors Parameters

New combined method for calibrating the parameters of 2D technological and electrophysical models of "software package for two-dimensional process and device simulation - MicroTec-3.02" was suggested in this paper. This calibrating is realized on basis of high-accuracy 1D doping profiles i...

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Bibliographische Detailangaben
Hauptverfasser:	Cherkaev, A.S., Makarov, E.A., Vorontsov, Y.I., Kalinin, S.V.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Application software Application specific integrated circuits Boron Calibration Circuit simulation Doping profiles Integrated circuit modeling Integrated circuit packaging Integrated circuit technology Modeling MOS-transistor Semiconductor process modeling Software packages TCAD Technology
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Beschreibung
Zusammenfassung:	New combined method for calibrating the parameters of 2D technological and electrophysical models of "software package for two-dimensional process and device simulation - MicroTec-3.02" was suggested in this paper. This calibrating is realized on basis of high-accuracy 1D doping profiles in the channel and source-drain areas of MOS-transistors which were calculated by "FACT" software package, as well as volt-ampere characteristics of researched devices, that were really measured.
ISSN:	1815-3712
DOI:	10.1109/SIBEDM.2007.4292923