Low Temperature Performance of Deep Submicron Germanium pMOSFETs

The electrical characteristics of germanium (Ge) pMOSFETs with high-κ dielectric and gate lengths down to 125nm have been studied as a function of temperature down to 77K. The effective hole mobility improves from 235cm2/Vs at room temperature to 490cm2/Vs at 77K due to the reduction of phonon scatt...

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Hauptverfasser:	Dobbie, Andy, Nicholas, Gareth, Meuris, Marc, Parker, Evan H. C., Whall, Terry E.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing Capacitance-voltage characteristics cryogenic temperatures Cryogenics Germanium Germanium (Ge) high-k High-K gate dielectrics Implants MOSFETs Optical scattering Silicon Temperature
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creator	Dobbie, Andy Nicholas, Gareth Meuris, Marc Parker, Evan H. C. Whall, Terry E.
description	The electrical characteristics of germanium (Ge) pMOSFETs with high-κ dielectric and gate lengths down to 125nm have been studied as a function of temperature down to 77K. The effective hole mobility improves from 235cm2/Vs at room temperature to 490cm2/Vs at 77K due to the reduction of phonon scattering. We report a drive current enhancement of 1001 μA/μm at 295K to 1394μA/μm at 77K for L = 125nm and VG - VT = VD = -1.5V and a reduction in the off-current by 1-2 decades. The decrease in the subthreshold slope from 100mV/dec to 37mV/dec at 77K would allow power supply voltage scaling, further reducing the off-state current, and making Ge transistors suitable candidates for low temperature CMOS applications.
doi_str_mv	10.1109/EDST.2007.4289778
format	Conference Proceeding
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The decrease in the subthreshold slope from 100mV/dec to 37mV/dec at 77K would allow power supply voltage scaling, further reducing the off-state current, and making Ge transistors suitable candidates for low temperature CMOS applications.</description><subject>Annealing</subject><subject>Capacitance-voltage characteristics</subject><subject>cryogenic temperatures</subject><subject>Cryogenics</subject><subject>Germanium</subject><subject>Germanium (Ge)</subject><subject>high-k</subject><subject>High-K gate dielectrics</subject><subject>Implants</subject><subject>MOSFETs</subject><subject>Optical scattering</subject><subject>Silicon</subject><subject>Temperature</subject><isbn>1424410975</isbn><isbn>9781424410972</isbn><isbn>9781424410989</isbn><isbn>1424410983</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1j91KxDAQhSMiqGsfQLzJC7RO0qTJ3Cn7p1BZob1fpu0UKnZb0i3i27vievVxzgcHjhD3ChKlAB_Xq6JMNIBLjPbonL8QETqvjDbm5D1eitv_4Oy1iKbpAwCUywwYfyOe8uFLltyPHOg4B5bvHNoh9HSoWQ6tXDGPspirvqvDcJBb_lXd3MvxbVds1uV0J65a-pw4OnMhylO9fInz3fZ1-ZzHnXL2GDeEqUcNCr3OlMXKQ0XYOF1R1TC1qs1INcR1VhuTWcuWQGuuMcUT0nQhHv5mO2bej6HrKXzvz5_THz2cSdI</recordid><startdate>200706</startdate><enddate>200706</enddate><creator>Dobbie, Andy</creator><creator>Nicholas, Gareth</creator><creator>Meuris, Marc</creator><creator>Parker, Evan H. 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C.</au><au>Whall, Terry E.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Low Temperature Performance of Deep Submicron Germanium pMOSFETs</atitle><btitle>2007 International Workshop on Electron Devices and Semiconductor Technology (EDST)</btitle><stitle>EDST</stitle><date>2007-06</date><risdate>2007</risdate><spage>62</spage><epage>65</epage><pages>62-65</pages><isbn>1424410975</isbn><isbn>9781424410972</isbn><eisbn>9781424410989</eisbn><eisbn>1424410983</eisbn><abstract>The electrical characteristics of germanium (Ge) pMOSFETs with high-κ dielectric and gate lengths down to 125nm have been studied as a function of temperature down to 77K. The effective hole mobility improves from 235cm2/Vs at room temperature to 490cm2/Vs at 77K due to the reduction of phonon scattering. We report a drive current enhancement of 1001 μA/μm at 295K to 1394μA/μm at 77K for L = 125nm and VG - VT = VD = -1.5V and a reduction in the off-current by 1-2 decades. 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subjects	Annealing Capacitance-voltage characteristics cryogenic temperatures Cryogenics Germanium Germanium (Ge) high-k High-K gate dielectrics Implants MOSFETs Optical scattering Silicon Temperature
title	Low Temperature Performance of Deep Submicron Germanium pMOSFETs
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