A 45-to-60-GHz Two-Band SiGe: C VCO for Millimeter-Wave Applications

A 45 - 60-GHz two-band double cross-coupled differential VCO is designed and fabricated using 0.25 μm SiG:C BiCMOS process technology whose f max is greater than 200 GHz. The VCO provides tuning ranges of 44.9 - 48.9 GHz when its bias current is 13 mA and of 58 - 60.4 GHz when a bias current of 7 mA...

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Bibliographische Detailangaben

Hauptverfasser:	Ja-Yol Lee, Sang-Heung Lee, Haecheon Kim, Hyun-Kyu Yu
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	60 GHz BiCMOS integrated circuits CMOS technology Frequency Germanium silicon alloys Millimeter wave technology Noise measurement Phase noise receiver SiGe:C Silicon germanium Tuning VCO Voltage-controlled oscillators
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