50 nm MHEMT Technology for G- and H-Band MMICs

A metamorphic HEMT (MHEMT) MMIC technology including circuit applications is presented. The MHEMT layers are MBE grown on 4-inch GaAs wafers. The technology is based on a 50 nm gate length MHEMT and includes a 50 μm substrate backside process with dry etched through-substrate vias. For the electron...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Leuther, A., Tessmann, A., Dammann, M., Schworer, C., Schlechtweg, M., Mikulla, M., Losch, R., Weimann, G.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Circuits Cutoff frequency Dry etching Electrons Gain Gallium arsenide Low-noise amplifiers mHEMTs MMICs Silicon compounds
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