Detection of a New Surface Killer Defect on Starting Si Material using Nomarski Principle of Differential Interference Contrast

End of line device failure analysis and inline defectivity investigations revealed a previously undetected surface killer defect that was generated during a front side polish process of integrated circuit Si substrate starting material. A surface defect impacting over 20% of the wafer was found to e...

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Bibliographische Detailangaben
Hauptverfasser: Dennis, C., Stanley, R., Cui, S.
Format: Tagungsbericht
Sprache:eng
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