New Methodology for the Characterization of EEPROM Extrinsic Behaviors

In medical and automotive applications, device reliability needs to be assessed with great precision. It is therefore mandatory to investigate deeply the extrinsic behavior of memory devices to optimize their operating specifications in order to obtain the best endurance and retention characteristic...

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Hauptverfasser: Medjahed, D., Yao, T., Wojciechowski, D., Gassot, P., Yameogo, M.
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Yao, T.
Wojciechowski, D.
Gassot, P.
Yameogo, M.
description In medical and automotive applications, device reliability needs to be assessed with great precision. It is therefore mandatory to investigate deeply the extrinsic behavior of memory devices to optimize their operating specifications in order to obtain the best endurance and retention characteristics. In this paper, we describe a new methodology to characterize the extrinsic behaviors of EEPROM devices that can be extended to other type of components. We fully describe the architecture of the test structure that we have developed. Finally, we present results that validate this new methodology.
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Ambient intelligence
CAST
Circuits
EEPROM
EPROM
Error correction codes
Extrapolation
Medical tests
Microelectronics
Semiconductor device reliability
Semiconductor device testing
Semiconductor memories
Test structures
Voltage
title New Methodology for the Characterization of EEPROM Extrinsic Behaviors
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