New Methodology for the Characterization of EEPROM Extrinsic Behaviors
In medical and automotive applications, device reliability needs to be assessed with great precision. It is therefore mandatory to investigate deeply the extrinsic behavior of memory devices to optimize their operating specifications in order to obtain the best endurance and retention characteristic...
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creator | Medjahed, D. Yao, T. Wojciechowski, D. Gassot, P. Yameogo, M. |
description | In medical and automotive applications, device reliability needs to be assessed with great precision. It is therefore mandatory to investigate deeply the extrinsic behavior of memory devices to optimize their operating specifications in order to obtain the best endurance and retention characteristics. In this paper, we describe a new methodology to characterize the extrinsic behaviors of EEPROM devices that can be extended to other type of components. We fully describe the architecture of the test structure that we have developed. Finally, we present results that validate this new methodology. |
doi_str_mv | 10.1109/ICMTS.2007.374455 |
format | Conference Proceeding |
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Finally, we present results that validate this new methodology.</description><subject>Ambient intelligence</subject><subject>CAST</subject><subject>Circuits</subject><subject>EEPROM</subject><subject>EPROM</subject><subject>Error correction codes</subject><subject>Extrapolation</subject><subject>Medical tests</subject><subject>Microelectronics</subject><subject>Semiconductor device reliability</subject><subject>Semiconductor device testing</subject><subject>Semiconductor memories</subject><subject>Test structures</subject><subject>Voltage</subject><issn>1071-9032</issn><issn>2158-1029</issn><isbn>142440780X</isbn><isbn>9781424407804</isbn><isbn>9781424407811</isbn><isbn>1424407818</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1jN1OwjAYQOtfIiAPYLzpCwy_r2vX7VKXoSQgRjHxjnTlK6tBaroFxaeXRL06F-fkMHaJMEKE4npSzhbPIwGgR6mWUqkjNix0jlJICQfiMesJVHmCIIoT1v8X8HrKeggakwJScc76bfsGIAAV9tj4gT75jLomrMImrPfchci7hnjZmGhsR9F_m86HLQ-OV9Xj03zGq68u-m3rLb-lxux8iO0FO3Nm09LwjwP2Mq4W5X0ynd9NyptpshYSusSlKISwRmJmERRpp7SWtXVKaVlkWqsVGCllWh86qA3VGVmXI2FtTYGUDtjV79cT0fIj-ncT90sp1GGv0h8vVE8m</recordid><startdate>200703</startdate><enddate>200703</enddate><creator>Medjahed, D.</creator><creator>Yao, T.</creator><creator>Wojciechowski, D.</creator><creator>Gassot, P.</creator><creator>Yameogo, M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200703</creationdate><title>New Methodology for the Characterization of EEPROM Extrinsic Behaviors</title><author>Medjahed, D. ; Yao, T. ; Wojciechowski, D. ; Gassot, P. ; Yameogo, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-g240t-f31222ca416c105e7f5774bcf557496775d0a4443b1220baeb6ecf81e1bca91e3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Ambient intelligence</topic><topic>CAST</topic><topic>Circuits</topic><topic>EEPROM</topic><topic>EPROM</topic><topic>Error correction codes</topic><topic>Extrapolation</topic><topic>Medical tests</topic><topic>Microelectronics</topic><topic>Semiconductor device reliability</topic><topic>Semiconductor device testing</topic><topic>Semiconductor memories</topic><topic>Test structures</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Medjahed, D.</creatorcontrib><creatorcontrib>Yao, T.</creatorcontrib><creatorcontrib>Wojciechowski, D.</creatorcontrib><creatorcontrib>Gassot, P.</creatorcontrib><creatorcontrib>Yameogo, M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Medjahed, D.</au><au>Yao, T.</au><au>Wojciechowski, D.</au><au>Gassot, P.</au><au>Yameogo, M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>New Methodology for the Characterization of EEPROM Extrinsic Behaviors</atitle><btitle>2007 IEEE International Conference on Microelectronic Test Structures</btitle><stitle>ICMTS</stitle><date>2007-03</date><risdate>2007</risdate><spage>59</spage><epage>62</epage><pages>59-62</pages><issn>1071-9032</issn><eissn>2158-1029</eissn><isbn>142440780X</isbn><isbn>9781424407804</isbn><eisbn>9781424407811</eisbn><eisbn>1424407818</eisbn><abstract>In medical and automotive applications, device reliability needs to be assessed with great precision. It is therefore mandatory to investigate deeply the extrinsic behavior of memory devices to optimize their operating specifications in order to obtain the best endurance and retention characteristics. In this paper, we describe a new methodology to characterize the extrinsic behaviors of EEPROM devices that can be extended to other type of components. We fully describe the architecture of the test structure that we have developed. Finally, we present results that validate this new methodology.</abstract><pub>IEEE</pub><doi>10.1109/ICMTS.2007.374455</doi><tpages>4</tpages></addata></record> |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Ambient intelligence CAST Circuits EEPROM EPROM Error correction codes Extrapolation Medical tests Microelectronics Semiconductor device reliability Semiconductor device testing Semiconductor memories Test structures Voltage |
title | New Methodology for the Characterization of EEPROM Extrinsic Behaviors |
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