A 20Gb/s Burst-Mode CDR Circuit Using Injection-Locking Technique
The design and experimental verification of a 20Gb/s CDR circuit based on injection-locking technique is presented. Fabricated in 90nm CMOS technology, this circuit achieves a BER of
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| creator | Lee, Jri Liu, Mingchung |
| description | The design and experimental verification of a 20Gb/s CDR circuit based on injection-locking technique is presented. Fabricated in 90nm CMOS technology, this circuit achieves a BER of |
| doi_str_mv | 10.1109/ISSCC.2007.373580 |
| format | Conference Proceeding |
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Fabricated in 90nm CMOS technology, this circuit achieves a BER of <10 -9 for both continuous and burst modes. It has tunability of over 800Mb/s while consuming 175mW. The re-acquisition time of this CDR is 1b interval.</description><identifier>ISSN: 0193-6530</identifier><identifier>ISBN: 1424408520</identifier><identifier>ISBN: 9781424408528</identifier><identifier>EISSN: 2376-8606</identifier><identifier>EISBN: 9781424408535</identifier><identifier>EISBN: 1424408539</identifier><identifier>DOI: 10.1109/ISSCC.2007.373580</identifier><language>eng</language><publisher>IEEE</publisher><subject>Circuits ; Clocks ; CMOS technology ; Filters ; Frequency ; Inductors ; Jitter ; Phase locked loops ; Voltage control ; Voltage-controlled oscillators</subject><ispartof>2007 IEEE International Solid-State Circuits Conference. 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Fabricated in 90nm CMOS technology, this circuit achieves a BER of <10 -9 for both continuous and burst modes. It has tunability of over 800Mb/s while consuming 175mW. The re-acquisition time of this CDR is 1b interval.</description><subject>Circuits</subject><subject>Clocks</subject><subject>CMOS technology</subject><subject>Filters</subject><subject>Frequency</subject><subject>Inductors</subject><subject>Jitter</subject><subject>Phase locked loops</subject><subject>Voltage control</subject><subject>Voltage-controlled oscillators</subject><issn>0193-6530</issn><issn>2376-8606</issn><isbn>1424408520</isbn><isbn>9781424408528</isbn><isbn>9781424408535</isbn><isbn>1424408539</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1j8lOwzAYhM0mkZY-AOKSF3D7e7ePwYUSKQiJhnOVOja4QAJZDrw9QcBppBlp5huELgksCQGzyrdba5cUQC2ZYkLDEVoYpQmnnIMWTByjhDIlsZYgT9DsP6BwihIghmEpGJyjWd8fAEAYqROUZSmFzX7Vp9dj1w_4vq19atePqY2dG-OQPvWxeU7z5uDdENsGF617_XFK716a-Dn6C3QWqrfeL_50jsrbm9Le4eJhk9uswNHAgB2ftsO-omGC4J7oypkQOBfSa5ATJihOwfO61oFXoSZAg2OMTZBG1aFmc3T1Wxu997uPLr5X3dduukipUOwbBGVLlw</recordid><startdate>200702</startdate><enddate>200702</enddate><creator>Lee, Jri</creator><creator>Liu, Mingchung</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200702</creationdate><title>A 20Gb/s Burst-Mode CDR Circuit Using Injection-Locking Technique</title><author>Lee, Jri ; Liu, Mingchung</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-c4530fba2f6534e18ac9ff4456e80640807420e4dd8f4afd102fc33396897dfd3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Circuits</topic><topic>Clocks</topic><topic>CMOS technology</topic><topic>Filters</topic><topic>Frequency</topic><topic>Inductors</topic><topic>Jitter</topic><topic>Phase locked loops</topic><topic>Voltage control</topic><topic>Voltage-controlled oscillators</topic><toplevel>online_resources</toplevel><creatorcontrib>Lee, Jri</creatorcontrib><creatorcontrib>Liu, Mingchung</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEL</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lee, Jri</au><au>Liu, Mingchung</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A 20Gb/s Burst-Mode CDR Circuit Using Injection-Locking Technique</atitle><btitle>2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers</btitle><stitle>ISSCC</stitle><date>2007-02</date><risdate>2007</risdate><spage>46</spage><epage>586</epage><pages>46-586</pages><issn>0193-6530</issn><eissn>2376-8606</eissn><isbn>1424408520</isbn><isbn>9781424408528</isbn><eisbn>9781424408535</eisbn><eisbn>1424408539</eisbn><abstract>The design and experimental verification of a 20Gb/s CDR circuit based on injection-locking technique is presented. Fabricated in 90nm CMOS technology, this circuit achieves a BER of <10 -9 for both continuous and burst modes. It has tunability of over 800Mb/s while consuming 175mW. The re-acquisition time of this CDR is 1b interval.</abstract><pub>IEEE</pub><doi>10.1109/ISSCC.2007.373580</doi><tpages>541</tpages></addata></record> |
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| ispartof | 2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 2007, p.46-586 |
| issn | 0193-6530 2376-8606 |
| language | eng |
| recordid | cdi_ieee_primary_4242257 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Circuits Clocks CMOS technology Filters Frequency Inductors Jitter Phase locked loops Voltage control Voltage-controlled oscillators |
| title | A 20Gb/s Burst-Mode CDR Circuit Using Injection-Locking Technique |
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