A 20Gb/s Burst-Mode CDR Circuit Using Injection-Locking Technique

A 20Gb/s Burst-Mode CDR Circuit Using Injection-Locking Technique

The design and experimental verification of a 20Gb/s CDR circuit based on injection-locking technique is presented. Fabricated in 90nm CMOS technology, this circuit achieves a BER of

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Bibliographische Detailangaben
Hauptverfasser: Lee, Jri, Liu, Mingchung
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuits
Clocks
CMOS technology
Filters
Frequency
Inductors
Jitter
Phase locked loops
Voltage control
Voltage-controlled oscillators
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Beschreibung
Zusammenfassung:The design and experimental verification of a 20Gb/s CDR circuit based on injection-locking technique is presented. Fabricated in 90nm CMOS technology, this circuit achieves a BER of
ISSN:0193-6530
2376-8606
DOI:10.1109/ISSCC.2007.373580