Reliability Studies on Non Planar DRAM Cell Transistor
We have experimentally analyzed the leakage mechanism and device degradations caused by the F-N and hot carrier stresses for the recently developed DRAM cell transistors having deeply recessed channels. We have found the important difference of the leakage mechanism between S-Fin and RCAT, which hav...
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| creator | Myoung Jin Lee Seonghoon Jin Chang-Ki Baek Sung-Min Hong Soo-Young Park Hong-Hyun Park Sang-Don Lee Sung-Woong Chung Jae-Goan Jeong Sung-Joo Hong Sung-Wook Park In-Young Chung Young June Park Hong Shick Min |
| description | We have experimentally analyzed the leakage mechanism and device degradations caused by the F-N and hot carrier stresses for the recently developed DRAM cell transistors having deeply recessed channels. We have found the important difference of the leakage mechanism between S-Fin and RCAT, which have each structural benefit in the characteristics of leakage current, so we can suggest the guide lines for device structures simultaneously having each merit in both structures. |
| doi_str_mv | 10.1109/RELPHY.2007.370000 |
| format | Conference Proceeding |
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We have found the important difference of the leakage mechanism between S-Fin and RCAT, which have each structural benefit in the characteristics of leakage current, so we can suggest the guide lines for device structures simultaneously having each merit in both structures.</description><subject>Current measurement</subject><subject>Degradation</subject><subject>Doping</subject><subject>FinFETs</subject><subject>Hot carriers</subject><subject>Leakage current</subject><subject>Nanoscale devices</subject><subject>Random access memory</subject><subject>Stress</subject><subject>Voltage</subject><issn>1541-7026</issn><issn>1938-1891</issn><isbn>9781424409181</isbn><isbn>1424409187</isbn><isbn>1424409195</isbn><isbn>9781424409198</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1jNtKw0AYhNcTWGteQG_2BVL33_NellitELXEeuFV-ZNsYGVNJZte9O0NqAPDwHzMEHIDbAHA3F21KjfrjwVnzCyEYZNOyBVILiVz4NQpmYETNgfr4Ixkzth_ZuF8YkpCbhjXlyRL6XNag9GSgZgRXfkYsA4xjEf6Nh7a4BPd9_Rl8iZijwO9r5bPtPAx0u2AfQpp3A_X5KLDmHz2l3Py_rDaFuu8fH18KpZlHsCoMW-c7UCgtLp1jnldq66VVsmaK900QjnuoGlriU4Z9K3t0He-QYtm6hC5mJPb39_gvd99D-ELh-NOcm6MBPEDi4xK-w</recordid><startdate>200704</startdate><enddate>200704</enddate><creator>Myoung Jin Lee</creator><creator>Seonghoon Jin</creator><creator>Chang-Ki Baek</creator><creator>Sung-Min Hong</creator><creator>Soo-Young Park</creator><creator>Hong-Hyun Park</creator><creator>Sang-Don Lee</creator><creator>Sung-Woong Chung</creator><creator>Jae-Goan Jeong</creator><creator>Sung-Joo Hong</creator><creator>Sung-Wook Park</creator><creator>In-Young Chung</creator><creator>Young June Park</creator><creator>Hong Shick Min</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200704</creationdate><title>Reliability Studies on Non Planar DRAM Cell Transistor</title><author>Myoung Jin Lee ; Seonghoon Jin ; Chang-Ki Baek ; Sung-Min Hong ; Soo-Young Park ; Hong-Hyun Park ; Sang-Don Lee ; Sung-Woong Chung ; Jae-Goan Jeong ; Sung-Joo Hong ; Sung-Wook Park ; In-Young Chung ; Young June Park ; Hong Shick Min</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-c98f13a486d990e6b5fd4854b256cc359291cdb4a957aed8faefeca8a7b4aaa23</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Current measurement</topic><topic>Degradation</topic><topic>Doping</topic><topic>FinFETs</topic><topic>Hot carriers</topic><topic>Leakage current</topic><topic>Nanoscale devices</topic><topic>Random access memory</topic><topic>Stress</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Myoung Jin Lee</creatorcontrib><creatorcontrib>Seonghoon Jin</creatorcontrib><creatorcontrib>Chang-Ki Baek</creatorcontrib><creatorcontrib>Sung-Min Hong</creatorcontrib><creatorcontrib>Soo-Young Park</creatorcontrib><creatorcontrib>Hong-Hyun Park</creatorcontrib><creatorcontrib>Sang-Don Lee</creatorcontrib><creatorcontrib>Sung-Woong Chung</creatorcontrib><creatorcontrib>Jae-Goan Jeong</creatorcontrib><creatorcontrib>Sung-Joo Hong</creatorcontrib><creatorcontrib>Sung-Wook Park</creatorcontrib><creatorcontrib>In-Young Chung</creatorcontrib><creatorcontrib>Young June Park</creatorcontrib><creatorcontrib>Hong Shick Min</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library Online</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Myoung Jin Lee</au><au>Seonghoon Jin</au><au>Chang-Ki Baek</au><au>Sung-Min Hong</au><au>Soo-Young Park</au><au>Hong-Hyun Park</au><au>Sang-Don Lee</au><au>Sung-Woong Chung</au><au>Jae-Goan Jeong</au><au>Sung-Joo Hong</au><au>Sung-Wook Park</au><au>In-Young Chung</au><au>Young June Park</au><au>Hong Shick Min</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Reliability Studies on Non Planar DRAM Cell Transistor</atitle><btitle>2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual</btitle><stitle>RELPHY</stitle><date>2007-04</date><risdate>2007</risdate><spage>660</spage><epage>661</epage><pages>660-661</pages><issn>1541-7026</issn><eissn>1938-1891</eissn><isbn>9781424409181</isbn><isbn>1424409187</isbn><eisbn>1424409195</eisbn><eisbn>9781424409198</eisbn><abstract>We have experimentally analyzed the leakage mechanism and device degradations caused by the F-N and hot carrier stresses for the recently developed DRAM cell transistors having deeply recessed channels. We have found the important difference of the leakage mechanism between S-Fin and RCAT, which have each structural benefit in the characteristics of leakage current, so we can suggest the guide lines for device structures simultaneously having each merit in both structures.</abstract><pub>IEEE</pub><doi>10.1109/RELPHY.2007.370000</doi><tpages>2</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1541-7026 |
| ispartof | 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007, p.660-661 |
| issn | 1541-7026 1938-1891 |
| language | eng |
| recordid | cdi_ieee_primary_4227741 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Current measurement Degradation Doping FinFETs Hot carriers Leakage current Nanoscale devices Random access memory Stress Voltage |
| title | Reliability Studies on Non Planar DRAM Cell Transistor |
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