Leakage Current Characteristic of Pre-Damaged Interlayer Dielectric During Voltage Ramp Method
In order to investigate the effects of Cu ions migration under BTS, VRDB tests were conducted on the pre-damaged samples. From the various VRDB tests on intrinsic and extrinsic system, migrated Cu ion from electrode plays a role of PF trap site. Since the migration of Cu ions is faster than the form...
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| creator | Sang-Soo Hwang Sung-Yup Jung Young-Chang Joo |
| description | In order to investigate the effects of Cu ions migration under BTS, VRDB tests were conducted on the pre-damaged samples. From the various VRDB tests on intrinsic and extrinsic system, migrated Cu ion from electrode plays a role of PF trap site. Since the migration of Cu ions is faster than the formation of intrinsic defects, TTF is set by the migration of Cu ions in extrinsic system. |
| doi_str_mv | 10.1109/RELPHY.2007.369984 |
| format | Conference Proceeding |
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From the various VRDB tests on intrinsic and extrinsic system, migrated Cu ion from electrode plays a role of PF trap site. 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From the various VRDB tests on intrinsic and extrinsic system, migrated Cu ion from electrode plays a role of PF trap site. Since the migration of Cu ions is faster than the formation of intrinsic defects, TTF is set by the migration of Cu ions in extrinsic system.</description><subject>Breakdown voltage</subject><subject>Dielectric breakdown</subject><subject>Electric breakdown</subject><subject>Electrodes</subject><subject>Electrons</subject><subject>Leakage current</subject><subject>Materials science and technology</subject><subject>Performance evaluation</subject><subject>Stress</subject><subject>System testing</subject><issn>1541-7026</issn><issn>1938-1891</issn><isbn>9781424409181</isbn><isbn>1424409187</isbn><isbn>1424409195</isbn><isbn>9781424409198</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1jEtOwzAUAM1PopReADa-QIqf_VLbS5QWWimIqgIkNlSO89Ia0o-cdNHbEwSsZjGjYewGxBBA2LvFJJ9P34dSCD1UI2sNnrArQIkoLNj0lPXAKpOAsXDGBlabf2fgvHMpQqKFHF2yQdN8CiFAj1CA6rGPnNyXWxHPDjHStuXZ2kXnW4qhaYPnu4rPIyVjt-miks-2nandkSIfB6rJt7GLxocYtiv-tqvbn9XCbfb8idr1rrxmF5WrGxr8sc9eHyYv2TTJnx9n2X2eBNBpmxhHqjAeykKmpS2sJ7QohNTCS1CEFUFBiFJJU2Lp0VSA1nqjZWrQK6_67Pb3G4houY9h4-JxiVLqLlHfnBhY7A</recordid><startdate>200704</startdate><enddate>200704</enddate><creator>Sang-Soo Hwang</creator><creator>Sung-Yup Jung</creator><creator>Young-Chang Joo</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200704</creationdate><title>Leakage Current Characteristic of Pre-Damaged Interlayer Dielectric During Voltage Ramp Method</title><author>Sang-Soo Hwang ; Sung-Yup Jung ; Young-Chang Joo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-8ae3b8c1db25d9b9ce49400270c213e4fe1be442328d4dc48f1499c872584c3c3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Breakdown voltage</topic><topic>Dielectric breakdown</topic><topic>Electric breakdown</topic><topic>Electrodes</topic><topic>Electrons</topic><topic>Leakage current</topic><topic>Materials science and technology</topic><topic>Performance evaluation</topic><topic>Stress</topic><topic>System testing</topic><toplevel>online_resources</toplevel><creatorcontrib>Sang-Soo Hwang</creatorcontrib><creatorcontrib>Sung-Yup Jung</creatorcontrib><creatorcontrib>Young-Chang Joo</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sang-Soo Hwang</au><au>Sung-Yup Jung</au><au>Young-Chang Joo</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Leakage Current Characteristic of Pre-Damaged Interlayer Dielectric During Voltage Ramp Method</atitle><btitle>2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual</btitle><stitle>RELPHY</stitle><date>2007-04</date><risdate>2007</risdate><spage>628</spage><epage>629</epage><pages>628-629</pages><issn>1541-7026</issn><eissn>1938-1891</eissn><isbn>9781424409181</isbn><isbn>1424409187</isbn><eisbn>1424409195</eisbn><eisbn>9781424409198</eisbn><abstract>In order to investigate the effects of Cu ions migration under BTS, VRDB tests were conducted on the pre-damaged samples. From the various VRDB tests on intrinsic and extrinsic system, migrated Cu ion from electrode plays a role of PF trap site. Since the migration of Cu ions is faster than the formation of intrinsic defects, TTF is set by the migration of Cu ions in extrinsic system.</abstract><pub>IEEE</pub><doi>10.1109/RELPHY.2007.369984</doi><tpages>2</tpages></addata></record> |
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| ispartof | 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007, p.628-629 |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Breakdown voltage Dielectric breakdown Electric breakdown Electrodes Electrons Leakage current Materials science and technology Performance evaluation Stress System testing |
| title | Leakage Current Characteristic of Pre-Damaged Interlayer Dielectric During Voltage Ramp Method |
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