Evaluation of SCR-Based ESD Protection Devices in 90nm and 65nm CMOS Technologies

The authors compare a number of promising SCR-based ESD protection devices in 90nm and 65nm CMOS technologies implemented with a consistent layout. The devices are evaluated using ESD metrics such as trigger voltage and current, on-resistance, failure current, turn-on time and DC leakage current. Th...

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Bibliographische Detailangaben

Hauptverfasser:	Di Sarro, J., Chatty, K., Gauthier, R., Rosenbaum, E.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Anodes Capacitance Cathodes CMOS technology Diodes Electrostatic discharge Electrostatic discharge (ESD) ESD protection circuits Leakage current Protection Silicon Controlled Rectifier (SCR) Thyristors Trigger circuits
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