Evaluation of SCR-Based ESD Protection Devices in 90nm and 65nm CMOS Technologies

The authors compare a number of promising SCR-based ESD protection devices in 90nm and 65nm CMOS technologies implemented with a consistent layout. The devices are evaluated using ESD metrics such as trigger voltage and current, on-resistance, failure current, turn-on time and DC leakage current. Th...

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Hauptverfasser:	Di Sarro, J., Chatty, K., Gauthier, R., Rosenbaum, E.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Anodes Capacitance Cathodes CMOS technology Diodes Electrostatic discharge Electrostatic discharge (ESD) ESD protection circuits Leakage current Protection Silicon Controlled Rectifier (SCR) Thyristors Trigger circuits
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creator	Di Sarro, J. Chatty, K. Gauthier, R. Rosenbaum, E.
description	The authors compare a number of promising SCR-based ESD protection devices in 90nm and 65nm CMOS technologies implemented with a consistent layout. The devices are evaluated using ESD metrics such as trigger voltage and current, on-resistance, failure current, turn-on time and DC leakage current. The authors also report that SCR turn-on time is highly dependent on the amplitude of the applied pulse.
doi_str_mv	10.1109/RELPHY.2007.369914
format	Conference Proceeding
fullrecord	<record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4227655</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4227655</ieee_id><sourcerecordid>4227655</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-411bbd2efb6fc3bf8d120b8ecf26b5810cb5765371ffdc4ca7d387f5325088973</originalsourceid><addsrcrecordid>eNo1zMtOAjEYBeB6S0TkBXTTFxj8_9671GEUEwwIuHBF2k6rNThjGCTx7SVeVuckX84h5AJhiAj2al5NZuPnIQPQQ66sRXFAzlAwIcCilYekh5abAo3FIzKw2vybweO9SYGFBqZOyaDr3gAAtRKAvEceq51bf7ptbhvaJroo58WN62JNq8WIzjbtNoYfG8VdDrGjuaEWmnfqmpoquS_lw3RBlzG8Nu26fcmxOycnya27OPjLPnm6rZbluJhM7-7L60mRUcttIRC9r1lMXqXAfTI1MvAmhsSUlwYheKmV5BpTqoMITtfc6CQ5k2CM1bxPLn9_c4xx9bHJ727ztRKM7VeSfwNCFFKY</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Evaluation of SCR-Based ESD Protection Devices in 90nm and 65nm CMOS Technologies</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Di Sarro, J. ; Chatty, K. ; Gauthier, R. ; Rosenbaum, E.</creator><creatorcontrib>Di Sarro, J. ; Chatty, K. ; Gauthier, R. ; Rosenbaum, E.</creatorcontrib><description>The authors compare a number of promising SCR-based ESD protection devices in 90nm and 65nm CMOS technologies implemented with a consistent layout. The devices are evaluated using ESD metrics such as trigger voltage and current, on-resistance, failure current, turn-on time and DC leakage current. The authors also report that SCR turn-on time is highly dependent on the amplitude of the applied pulse.</description><identifier>ISSN: 1541-7026</identifier><identifier>ISBN: 9781424409181</identifier><identifier>ISBN: 1424409187</identifier><identifier>EISSN: 1938-1891</identifier><identifier>EISBN: 1424409195</identifier><identifier>EISBN: 9781424409198</identifier><identifier>DOI: 10.1109/RELPHY.2007.369914</identifier><language>eng</language><publisher>IEEE</publisher><subject>Anodes ; Capacitance ; Cathodes ; CMOS technology ; Diodes ; Electrostatic discharge ; Electrostatic discharge (ESD) ; ESD protection circuits ; Leakage current ; Protection ; Silicon Controlled Rectifier (SCR) ; Thyristors ; Trigger circuits</subject><ispartof>2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007, p.348-357</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4227655$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4227655$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Di Sarro, J.</creatorcontrib><creatorcontrib>Chatty, K.</creatorcontrib><creatorcontrib>Gauthier, R.</creatorcontrib><creatorcontrib>Rosenbaum, E.</creatorcontrib><title>Evaluation of SCR-Based ESD Protection Devices in 90nm and 65nm CMOS Technologies</title><title>2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual</title><addtitle>RELPHY</addtitle><description>The authors compare a number of promising SCR-based ESD protection devices in 90nm and 65nm CMOS technologies implemented with a consistent layout. The devices are evaluated using ESD metrics such as trigger voltage and current, on-resistance, failure current, turn-on time and DC leakage current. The authors also report that SCR turn-on time is highly dependent on the amplitude of the applied pulse.</description><subject>Anodes</subject><subject>Capacitance</subject><subject>Cathodes</subject><subject>CMOS technology</subject><subject>Diodes</subject><subject>Electrostatic discharge</subject><subject>Electrostatic discharge (ESD)</subject><subject>ESD protection circuits</subject><subject>Leakage current</subject><subject>Protection</subject><subject>Silicon Controlled Rectifier (SCR)</subject><subject>Thyristors</subject><subject>Trigger circuits</subject><issn>1541-7026</issn><issn>1938-1891</issn><isbn>9781424409181</isbn><isbn>1424409187</isbn><isbn>1424409195</isbn><isbn>9781424409198</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1zMtOAjEYBeB6S0TkBXTTFxj8_9671GEUEwwIuHBF2k6rNThjGCTx7SVeVuckX84h5AJhiAj2al5NZuPnIQPQQ66sRXFAzlAwIcCilYekh5abAo3FIzKw2vybweO9SYGFBqZOyaDr3gAAtRKAvEceq51bf7ptbhvaJroo58WN62JNq8WIzjbtNoYfG8VdDrGjuaEWmnfqmpoquS_lw3RBlzG8Nu26fcmxOycnya27OPjLPnm6rZbluJhM7-7L60mRUcttIRC9r1lMXqXAfTI1MvAmhsSUlwYheKmV5BpTqoMITtfc6CQ5k2CM1bxPLn9_c4xx9bHJ727ztRKM7VeSfwNCFFKY</recordid><startdate>200704</startdate><enddate>200704</enddate><creator>Di Sarro, J.</creator><creator>Chatty, K.</creator><creator>Gauthier, R.</creator><creator>Rosenbaum, E.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200704</creationdate><title>Evaluation of SCR-Based ESD Protection Devices in 90nm and 65nm CMOS Technologies</title><author>Di Sarro, J. ; Chatty, K. ; Gauthier, R. ; Rosenbaum, E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-411bbd2efb6fc3bf8d120b8ecf26b5810cb5765371ffdc4ca7d387f5325088973</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Anodes</topic><topic>Capacitance</topic><topic>Cathodes</topic><topic>CMOS technology</topic><topic>Diodes</topic><topic>Electrostatic discharge</topic><topic>Electrostatic discharge (ESD)</topic><topic>ESD protection circuits</topic><topic>Leakage current</topic><topic>Protection</topic><topic>Silicon Controlled Rectifier (SCR)</topic><topic>Thyristors</topic><topic>Trigger circuits</topic><toplevel>online_resources</toplevel><creatorcontrib>Di Sarro, J.</creatorcontrib><creatorcontrib>Chatty, K.</creatorcontrib><creatorcontrib>Gauthier, R.</creatorcontrib><creatorcontrib>Rosenbaum, E.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Di Sarro, J.</au><au>Chatty, K.</au><au>Gauthier, R.</au><au>Rosenbaum, E.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Evaluation of SCR-Based ESD Protection Devices in 90nm and 65nm CMOS Technologies</atitle><btitle>2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual</btitle><stitle>RELPHY</stitle><date>2007-04</date><risdate>2007</risdate><spage>348</spage><epage>357</epage><pages>348-357</pages><issn>1541-7026</issn><eissn>1938-1891</eissn><isbn>9781424409181</isbn><isbn>1424409187</isbn><eisbn>1424409195</eisbn><eisbn>9781424409198</eisbn><abstract>The authors compare a number of promising SCR-based ESD protection devices in 90nm and 65nm CMOS technologies implemented with a consistent layout. The devices are evaluated using ESD metrics such as trigger voltage and current, on-resistance, failure current, turn-on time and DC leakage current. The authors also report that SCR turn-on time is highly dependent on the amplitude of the applied pulse.</abstract><pub>IEEE</pub><doi>10.1109/RELPHY.2007.369914</doi><tpages>10</tpages></addata></record>
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issn	1541-7026 1938-1891
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source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Anodes Capacitance Cathodes CMOS technology Diodes Electrostatic discharge Electrostatic discharge (ESD) ESD protection circuits Leakage current Protection Silicon Controlled Rectifier (SCR) Thyristors Trigger circuits
title	Evaluation of SCR-Based ESD Protection Devices in 90nm and 65nm CMOS Technologies
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T18%3A03%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Evaluation%20of%20SCR-Based%20ESD%20Protection%20Devices%20in%2090nm%20and%2065nm%20CMOS%20Technologies&rft.btitle=2007%20IEEE%20International%20Reliability%20Physics%20Symposium%20Proceedings.%2045th%20Annual&rft.au=Di%20Sarro,%20J.&rft.date=2007-04&rft.spage=348&rft.epage=357&rft.pages=348-357&rft.issn=1541-7026&rft.eissn=1938-1891&rft.isbn=9781424409181&rft.isbn_list=1424409187&rft_id=info:doi/10.1109/RELPHY.2007.369914&rft_dat=%3Cieee_6IE%3E4227655%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=1424409195&rft.eisbn_list=9781424409198&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4227655&rfr_iscdi=true