Switching Transients of Power Diode
The aim of the work presented in this paper is to gain an insight in the switching transient of the power diode, reverse recovery, and methods of reducing the reverse recovery time. The limitations have also been discussed in using carrier lifetime killing such as by doping gold and platinum during...
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| creator | Eio, S. Shammas, N.Y.A. |
| description | The aim of the work presented in this paper is to gain an insight in the switching transient of the power diode, reverse recovery, and methods of reducing the reverse recovery time. The limitations have also been discussed in using carrier lifetime killing such as by doping gold and platinum during the manufacturing process, high-energy irradiation before metallisation and after encapsulation, and a recent research to associate monolithically devices to obtain low conduction losses and high switching ability |
| doi_str_mv | 10.1109/UPEC.2006.367541 |
| format | Conference Proceeding |
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The limitations have also been discussed in using carrier lifetime killing such as by doping gold and platinum during the manufacturing process, high-energy irradiation before metallisation and after encapsulation, and a recent research to associate monolithically devices to obtain low conduction losses and high switching ability</description><identifier>ISBN: 1861353421</identifier><identifier>ISBN: 9781861353429</identifier><identifier>DOI: 10.1109/UPEC.2006.367541</identifier><language>eng</language><publisher>IEEE</publisher><subject>carrier lifetime killing ; Charge carrier lifetime ; Circuits ; Impedance ; Inductance ; Power semiconductor switches ; reverse recovery time ; Semiconductor diodes ; Space charge ; Steady-state ; Switching frequency ; Switching transients ; Voltage</subject><ispartof>Proceedings of the 41st International Universities Power Engineering Conference, 2006, Vol.2, p.564-568</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4218748$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,778,782,787,788,2054,27912,54907</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4218748$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Eio, S.</creatorcontrib><creatorcontrib>Shammas, N.Y.A.</creatorcontrib><title>Switching Transients of Power Diode</title><title>Proceedings of the 41st International Universities Power Engineering Conference</title><addtitle>UPEC</addtitle><description>The aim of the work presented in this paper is to gain an insight in the switching transient of the power diode, reverse recovery, and methods of reducing the reverse recovery time. The limitations have also been discussed in using carrier lifetime killing such as by doping gold and platinum during the manufacturing process, high-energy irradiation before metallisation and after encapsulation, and a recent research to associate monolithically devices to obtain low conduction losses and high switching ability</description><subject>carrier lifetime killing</subject><subject>Charge carrier lifetime</subject><subject>Circuits</subject><subject>Impedance</subject><subject>Inductance</subject><subject>Power semiconductor switches</subject><subject>reverse recovery time</subject><subject>Semiconductor diodes</subject><subject>Space charge</subject><subject>Steady-state</subject><subject>Switching frequency</subject><subject>Switching transients</subject><subject>Voltage</subject><isbn>1861353421</isbn><isbn>9781861353429</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotjk1Lw0AURQdEUGv3gpuA68R58-ZzKbFWoWDBdl1mnPd0RBNJAsV_b0AvHM7ucIW4AtkAyHC7367aRklpG7TOaDgRF-AtoEGt4Ewsx_FDzvPKea3Oxc3LsUyv76V7q3ZD7MZC3TRWPVfb_khDdV_6TJfilOPnSMt_L8T-YbVrH-vN8_qpvdvUBZyZ6qgSc2RmCk76jMqh91mhpMjJxpxRpxw0EmQOPkAyRkZwM8qyTA4X4vqvW4jo8D2Urzj8HObb3mmPv9OnPRw</recordid><startdate>200609</startdate><enddate>200609</enddate><creator>Eio, S.</creator><creator>Shammas, N.Y.A.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200609</creationdate><title>Switching Transients of Power Diode</title><author>Eio, S. ; Shammas, N.Y.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-a2bffafffe9708d327388d230eafb6add34bd943e1df9891b550a170a126f0b73</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><topic>carrier lifetime killing</topic><topic>Charge carrier lifetime</topic><topic>Circuits</topic><topic>Impedance</topic><topic>Inductance</topic><topic>Power semiconductor switches</topic><topic>reverse recovery time</topic><topic>Semiconductor diodes</topic><topic>Space charge</topic><topic>Steady-state</topic><topic>Switching frequency</topic><topic>Switching transients</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Eio, S.</creatorcontrib><creatorcontrib>Shammas, N.Y.A.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Eio, S.</au><au>Shammas, N.Y.A.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Switching Transients of Power Diode</atitle><btitle>Proceedings of the 41st International Universities Power Engineering Conference</btitle><stitle>UPEC</stitle><date>2006-09</date><risdate>2006</risdate><volume>2</volume><spage>564</spage><epage>568</epage><pages>564-568</pages><isbn>1861353421</isbn><isbn>9781861353429</isbn><abstract>The aim of the work presented in this paper is to gain an insight in the switching transient of the power diode, reverse recovery, and methods of reducing the reverse recovery time. The limitations have also been discussed in using carrier lifetime killing such as by doping gold and platinum during the manufacturing process, high-energy irradiation before metallisation and after encapsulation, and a recent research to associate monolithically devices to obtain low conduction losses and high switching ability</abstract><pub>IEEE</pub><doi>10.1109/UPEC.2006.367541</doi><tpages>5</tpages></addata></record> |
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| identifier | ISBN: 1861353421 |
| ispartof | Proceedings of the 41st International Universities Power Engineering Conference, 2006, Vol.2, p.564-568 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | carrier lifetime killing Charge carrier lifetime Circuits Impedance Inductance Power semiconductor switches reverse recovery time Semiconductor diodes Space charge Steady-state Switching frequency Switching transients Voltage |
| title | Switching Transients of Power Diode |
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