Oppositely Biased Multibit Cells for Toggle Magnetic Random Access Memory

A new type of multibit cell for toggle type MRAM is presented. The dual-bit cell stack consists of two conventional toggle MRAM cells connected in series. These cells have the same cell geometry, anisotropy, and pinned directions but have opposite magnetic bias along the anisotropy axis directions....

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Veröffentlicht in:	IEEE transactions on magnetics 2007-06, Vol.43 (6), p.2340-2342
Hauptverfasser:	Ju, K., Allegranza, O.
Format:	Artikel
Sprache:	eng
Schlagworte:	Anisotropic magnetoresistance Anisotropy Antiferromagnetic materials Bias Conductors Cross-disciplinary physics: materials science rheology Density Exact sciences and technology Geometry Magnetic anisotropy Magnetic random access memory (MRAM) Magnetic separation Magnetic switching magnetic tunnel junction Magnetic tunneling Magnetism magnetoresistive device Magnetoresistive random access memory Materials science Mathematical analysis micromagnetic switching Other topics in materials science Perpendicular magnetic anisotropy Physics Power consumption random access memories (RAMs) Random access memory Stacks Switching
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