Magnetoresistance of FeCo Nanocontacts With Current-Perpendicular-to-Plane Spin-Valve Structure
We have achieved a magnetoresistance (MR) ratio of 7%-10% at a resistance area product (RA) of 0.5-1.5 Omegamum 2 by ferromagnetic FeCo nanocontacts in Al nano-oxide-layer (NOL) with current-perpendicular-to-plane spin-valve (CPP-SV) structure. Conductive atomic-force-microscopy shows clear current-...
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| Veröffentlicht in: | IEEE transactions on magnetics 2007-06, Vol.43 (6), p.2848-2850 |
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| container_title | IEEE transactions on magnetics |
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| creator | Fuke, H.N. Hashimoto, S. Takagishi, M. Iwasaki, H. Kawasaki, S. Miyake, K. Sahashi, M. |
| description | We have achieved a magnetoresistance (MR) ratio of 7%-10% at a resistance area product (RA) of 0.5-1.5 Omegamum 2 by ferromagnetic FeCo nanocontacts in Al nano-oxide-layer (NOL) with current-perpendicular-to-plane spin-valve (CPP-SV) structure. Conductive atomic-force-microscopy shows clear current-path regions of a few nanometers in size surrounded by the Al-NOL. The MR dependence on resistance area product (RA) is well explained by the current-confined-path model assuming that the spin-dependent scattering has an FeCo nanocontact origin, different from tunnel magnetoresistance (TMR). Resistance increases with increasing bias voltage, indicating joule heating by high-current density in nanocontacts, in contrast to TMR. The MR origin is mainly interpreted as spin-dependent scattering due to domain wall formed at ferromagnetic nanocontact |
| doi_str_mv | 10.1109/TMAG.2007.893117 |
| format | Article |
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Conductive atomic-force-microscopy shows clear current-path regions of a few nanometers in size surrounded by the Al-NOL. The MR dependence on resistance area product (RA) is well explained by the current-confined-path model assuming that the spin-dependent scattering has an FeCo nanocontact origin, different from tunnel magnetoresistance (TMR). Resistance increases with increasing bias voltage, indicating joule heating by high-current density in nanocontacts, in contrast to TMR. The MR origin is mainly interpreted as spin-dependent scattering due to domain wall formed at ferromagnetic nanocontact</description><identifier>ISSN: 0018-9464</identifier><identifier>EISSN: 1941-0069</identifier><identifier>DOI: 10.1109/TMAG.2007.893117</identifier><identifier>CODEN: IEMGAQ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Aluminum ; Ballistic magnetoresistance ; Conductive atomic-force-microscopy ; Cross-disciplinary physics: materials science; rheology ; domain wall ; Exact sciences and technology ; Ferromagnetism ; Giant magnetoresistance ; Iron ; Magnetic devices ; Magnetic domain walls ; Magnetic domains ; Magnetic recording ; Magnetism ; Magnetoresistance ; Magnetoresistivity ; Materials science ; Nanocomposites ; nanocontact magnetoresistance (MR) ; Nanocontacts ; Nanomaterials ; Nanostructure ; Origins ; Other topics in materials science ; Physics ; Scattering ; spin-valve ; Tunneling magnetoresistance</subject><ispartof>IEEE transactions on magnetics, 2007-06, Vol.43 (6), p.2848-2850</ispartof><rights>2007 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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Conductive atomic-force-microscopy shows clear current-path regions of a few nanometers in size surrounded by the Al-NOL. The MR dependence on resistance area product (RA) is well explained by the current-confined-path model assuming that the spin-dependent scattering has an FeCo nanocontact origin, different from tunnel magnetoresistance (TMR). Resistance increases with increasing bias voltage, indicating joule heating by high-current density in nanocontacts, in contrast to TMR. The MR origin is mainly interpreted as spin-dependent scattering due to domain wall formed at ferromagnetic nanocontact</description><subject>Aluminum</subject><subject>Ballistic magnetoresistance</subject><subject>Conductive atomic-force-microscopy</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>domain wall</subject><subject>Exact sciences and technology</subject><subject>Ferromagnetism</subject><subject>Giant magnetoresistance</subject><subject>Iron</subject><subject>Magnetic devices</subject><subject>Magnetic domain walls</subject><subject>Magnetic domains</subject><subject>Magnetic recording</subject><subject>Magnetism</subject><subject>Magnetoresistance</subject><subject>Magnetoresistivity</subject><subject>Materials science</subject><subject>Nanocomposites</subject><subject>nanocontact magnetoresistance (MR)</subject><subject>Nanocontacts</subject><subject>Nanomaterials</subject><subject>Nanostructure</subject><subject>Origins</subject><subject>Other topics in materials science</subject><subject>Physics</subject><subject>Scattering</subject><subject>spin-valve</subject><subject>Tunneling magnetoresistance</subject><issn>0018-9464</issn><issn>1941-0069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kc9rFTEQx4Mo-KzeBS-LoHjJcyY_drPH8rBVaLVg1WPI5k10yzZ5TbKC_727vKLgwdPMMJ_5MjNfxp4jbBGhf3t9eXq-FQDd1vQSsXvANtgr5ABt_5BtANDwXrXqMXtSys1SKo2wYfbSfY9UU6YyluqipyaF5ox2qfnoYvIpVudrab6N9Uezm3OmWPkV5QPF_ejnyWVeE7-aXKTm82GM_Kubfi5pzbOvc6an7FFwU6Fn9_GEfTl7d717zy8-nX_YnV5wL42q3O0HcFppEVraKxMMDqpTcpDUC0MYQMC-daQ9tkIOEHAwQngVdHDOq6GTJ-z1UfeQ091MpdrbsXia1sXSXKxULaLWegHf_BdE2WqUBsyKvvwHvUlzjssZ1rQKVbc8eoHgCPmcSskU7CGPty7_sgh2dcauztjVGXt0Zhl5da_rindTyMvbx_J3zhjRgV6lXxy5kYj-tJUA0QkhfwOvQ5bT</recordid><startdate>20070601</startdate><enddate>20070601</enddate><creator>Fuke, H.N.</creator><creator>Hashimoto, S.</creator><creator>Takagishi, M.</creator><creator>Iwasaki, H.</creator><creator>Kawasaki, S.</creator><creator>Miyake, K.</creator><creator>Sahashi, M.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Conductive atomic-force-microscopy shows clear current-path regions of a few nanometers in size surrounded by the Al-NOL. The MR dependence on resistance area product (RA) is well explained by the current-confined-path model assuming that the spin-dependent scattering has an FeCo nanocontact origin, different from tunnel magnetoresistance (TMR). Resistance increases with increasing bias voltage, indicating joule heating by high-current density in nanocontacts, in contrast to TMR. The MR origin is mainly interpreted as spin-dependent scattering due to domain wall formed at ferromagnetic nanocontact</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMAG.2007.893117</doi><tpages>3</tpages></addata></record> |
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| subjects | Aluminum Ballistic magnetoresistance Conductive atomic-force-microscopy Cross-disciplinary physics: materials science rheology domain wall Exact sciences and technology Ferromagnetism Giant magnetoresistance Iron Magnetic devices Magnetic domain walls Magnetic domains Magnetic recording Magnetism Magnetoresistance Magnetoresistivity Materials science Nanocomposites nanocontact magnetoresistance (MR) Nanocontacts Nanomaterials Nanostructure Origins Other topics in materials science Physics Scattering spin-valve Tunneling magnetoresistance |
| title | Magnetoresistance of FeCo Nanocontacts With Current-Perpendicular-to-Plane Spin-Valve Structure |
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