Long-Term Stability Test System for High-Voltage, High-Frequency SiC Power Devices

Long-Term Stability Test System for High-Voltage, High-Frequency SiC Power Devices

This paper presents a test system developed for long-term stability characterization of 10 kV Silicon Carbide (SiC) power MOSFETs and SiC diodes under 20 kHz hard switching conditions. The system is designed to test a single power switch and a single power diode for continuous or burst switching con...

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Hauptverfasser: Duong, Tam H., Berning, David W., Hefner, A. R., Smedley, Keyue M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Burst switching
DC-DC power converters
Diodes
Insulated gate bipolar transistors
MOSFETs
Silicon carbide
Stability
Switching converters
System testing
Voltage
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Berning, David W.
Hefner, A. R.
Smedley, Keyue M.
description This paper presents a test system developed for long-term stability characterization of 10 kV Silicon Carbide (SiC) power MOSFETs and SiC diodes under 20 kHz hard switching conditions. The system is designed to test a single power switch and a single power diode for continuous or burst switching conditions up to 5 kV and 5 A. The test system includes a 4.5 kV to 5 kV boost converter to emulate a 22.5 kW hard switching power converter. An additional DC-DC converter is used to recover the power processed by the boost converter. The design criteria, simulation, and construction of the test system are discussed in this paper and the system operation is demonstrated using various high voltage devices including 4.5 kV Silicon IGBTs, 10-kV SiC MOSFETs and 15 kV stacked silicon diodes.
doi_str_mv 10.1109/APEX.2007.357673
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fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4195876</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4195876</ieee_id><sourcerecordid>4195876</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-53b80230b53bea901445c63a3d28f10da2d551eacca5d7d6fde232877a368f9b3</originalsourceid><addsrcrecordid>eNotjktPwkAURic-EhHZm7iZH-Dgnbnz6pJUEBMSiTTGHZm2tzgGqLZF038vCa6-czYnH2O3EsZSQvIwWU7fxwrAjdE46_CMDZR2IKzV7pyNEuelVlqDk6gu2ECC9kIh6it23bafAAqdtAP2uqj3G5FRs-OrLuRxG7ueZ9R2fNW3He14VTd8Hjcf4q3edmFD9yebNfR9oH3R81VM-bL-pYY_0k8sqL1hl1XYtjT63yHLZtMsnYvFy9NzOlmImEAnDOb-eALyI1BIQGptCosBS-UrCWVQpTGSQlEEU7rSViUpVN65gNZXSY5DdnfKRiJafzVxF5p-rWVivLP4BwQLUIY</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Long-Term Stability Test System for High-Voltage, High-Frequency SiC Power Devices</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Duong, Tam H. ; Berning, David W. ; Hefner, A. R. ; Smedley, Keyue M.</creator><creatorcontrib>Duong, Tam H. ; Berning, David W. ; Hefner, A. R. ; Smedley, Keyue M.</creatorcontrib><description>This paper presents a test system developed for long-term stability characterization of 10 kV Silicon Carbide (SiC) power MOSFETs and SiC diodes under 20 kHz hard switching conditions. The system is designed to test a single power switch and a single power diode for continuous or burst switching conditions up to 5 kV and 5 A. The test system includes a 4.5 kV to 5 kV boost converter to emulate a 22.5 kW hard switching power converter. An additional DC-DC converter is used to recover the power processed by the boost converter. The design criteria, simulation, and construction of the test system are discussed in this paper and the system operation is demonstrated using various high voltage devices including 4.5 kV Silicon IGBTs, 10-kV SiC MOSFETs and 15 kV stacked silicon diodes.</description><identifier>ISSN: 1048-2334</identifier><identifier>ISBN: 9781424407132</identifier><identifier>ISBN: 1424407133</identifier><identifier>EISSN: 2470-6647</identifier><identifier>DOI: 10.1109/APEX.2007.357673</identifier><language>eng</language><publisher>IEEE</publisher><subject>Burst switching ; DC-DC power converters ; Diodes ; Insulated gate bipolar transistors ; MOSFETs ; Silicon carbide ; Stability ; Switching converters ; System testing ; Voltage</subject><ispartof>APEC 07 - Twenty-Second Annual IEEE Applied Power Electronics Conference and Exposition, 2007, p.1240-1246</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4195876$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4195876$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Duong, Tam H.</creatorcontrib><creatorcontrib>Berning, David W.</creatorcontrib><creatorcontrib>Hefner, A. R.</creatorcontrib><creatorcontrib>Smedley, Keyue M.</creatorcontrib><title>Long-Term Stability Test System for High-Voltage, High-Frequency SiC Power Devices</title><title>APEC 07 - Twenty-Second Annual IEEE Applied Power Electronics Conference and Exposition</title><addtitle>APEC</addtitle><description>This paper presents a test system developed for long-term stability characterization of 10 kV Silicon Carbide (SiC) power MOSFETs and SiC diodes under 20 kHz hard switching conditions. The system is designed to test a single power switch and a single power diode for continuous or burst switching conditions up to 5 kV and 5 A. The test system includes a 4.5 kV to 5 kV boost converter to emulate a 22.5 kW hard switching power converter. An additional DC-DC converter is used to recover the power processed by the boost converter. The design criteria, simulation, and construction of the test system are discussed in this paper and the system operation is demonstrated using various high voltage devices including 4.5 kV Silicon IGBTs, 10-kV SiC MOSFETs and 15 kV stacked silicon diodes.</description><subject>Burst switching</subject><subject>DC-DC power converters</subject><subject>Diodes</subject><subject>Insulated gate bipolar transistors</subject><subject>MOSFETs</subject><subject>Silicon carbide</subject><subject>Stability</subject><subject>Switching converters</subject><subject>System testing</subject><subject>Voltage</subject><issn>1048-2334</issn><issn>2470-6647</issn><isbn>9781424407132</isbn><isbn>1424407133</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotjktPwkAURic-EhHZm7iZH-Dgnbnz6pJUEBMSiTTGHZm2tzgGqLZF038vCa6-czYnH2O3EsZSQvIwWU7fxwrAjdE46_CMDZR2IKzV7pyNEuelVlqDk6gu2ECC9kIh6it23bafAAqdtAP2uqj3G5FRs-OrLuRxG7ueZ9R2fNW3He14VTd8Hjcf4q3edmFD9yebNfR9oH3R81VM-bL-pYY_0k8sqL1hl1XYtjT63yHLZtMsnYvFy9NzOlmImEAnDOb-eALyI1BIQGptCosBS-UrCWVQpTGSQlEEU7rSViUpVN65gNZXSY5DdnfKRiJafzVxF5p-rWVivLP4BwQLUIY</recordid><startdate>200702</startdate><enddate>200702</enddate><creator>Duong, Tam H.</creator><creator>Berning, David W.</creator><creator>Hefner, A. R.</creator><creator>Smedley, Keyue M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200702</creationdate><title>Long-Term Stability Test System for High-Voltage, High-Frequency SiC Power Devices</title><author>Duong, Tam H. ; Berning, David W. ; Hefner, A. R. ; Smedley, Keyue M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-53b80230b53bea901445c63a3d28f10da2d551eacca5d7d6fde232877a368f9b3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Burst switching</topic><topic>DC-DC power converters</topic><topic>Diodes</topic><topic>Insulated gate bipolar transistors</topic><topic>MOSFETs</topic><topic>Silicon carbide</topic><topic>Stability</topic><topic>Switching converters</topic><topic>System testing</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Duong, Tam H.</creatorcontrib><creatorcontrib>Berning, David W.</creatorcontrib><creatorcontrib>Hefner, A. R.</creatorcontrib><creatorcontrib>Smedley, Keyue M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Duong, Tam H.</au><au>Berning, David W.</au><au>Hefner, A. R.</au><au>Smedley, Keyue M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Long-Term Stability Test System for High-Voltage, High-Frequency SiC Power Devices</atitle><btitle>APEC 07 - Twenty-Second Annual IEEE Applied Power Electronics Conference and Exposition</btitle><stitle>APEC</stitle><date>2007-02</date><risdate>2007</risdate><spage>1240</spage><epage>1246</epage><pages>1240-1246</pages><issn>1048-2334</issn><eissn>2470-6647</eissn><isbn>9781424407132</isbn><isbn>1424407133</isbn><abstract>This paper presents a test system developed for long-term stability characterization of 10 kV Silicon Carbide (SiC) power MOSFETs and SiC diodes under 20 kHz hard switching conditions. The system is designed to test a single power switch and a single power diode for continuous or burst switching conditions up to 5 kV and 5 A. The test system includes a 4.5 kV to 5 kV boost converter to emulate a 22.5 kW hard switching power converter. An additional DC-DC converter is used to recover the power processed by the boost converter. The design criteria, simulation, and construction of the test system are discussed in this paper and the system operation is demonstrated using various high voltage devices including 4.5 kV Silicon IGBTs, 10-kV SiC MOSFETs and 15 kV stacked silicon diodes.</abstract><pub>IEEE</pub><doi>10.1109/APEX.2007.357673</doi><tpages>7</tpages></addata></record>
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2470-6647
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Burst switching
DC-DC power converters
Diodes
Insulated gate bipolar transistors
MOSFETs
Silicon carbide
Stability
Switching converters
System testing
Voltage
title Long-Term Stability Test System for High-Voltage, High-Frequency SiC Power Devices
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-04T02%3A44%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Long-Term%20Stability%20Test%20System%20for%20High-Voltage,%20High-Frequency%20SiC%20Power%20Devices&rft.btitle=APEC%2007%20-%20Twenty-Second%20Annual%20IEEE%20Applied%20Power%20Electronics%20Conference%20and%20Exposition&rft.au=Duong,%20Tam%20H.&rft.date=2007-02&rft.spage=1240&rft.epage=1246&rft.pages=1240-1246&rft.issn=1048-2334&rft.eissn=2470-6647&rft.isbn=9781424407132&rft.isbn_list=1424407133&rft_id=info:doi/10.1109/APEX.2007.357673&rft_dat=%3Cieee_6IE%3E4195876%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4195876&rfr_iscdi=true