Current Density-Voltage and Capacitance-Voltage Characteristics of Pulsed Laser Deposited Nitrogen-Doped n-Carbon/p-Silicon Diode

The current density-voltage (J-V) and capacitance-voltage (C-V) characteristics of a p-n heterojunction device are studied. The device was fabricated by depositing nitrogen (N) doped carbon (C) thin film on/p-type silicon substrate by pulsed laser deposition (PLD) technique at room temperature. Camp...

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Bibliographische Detailangaben

Hauptverfasser:	Islam, M.Z., Mominuzzaman, S.M., Soga, T., Jimbo, T.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Capacitance-voltage characteristics Carbon Diodes Heterojunctions Nitrogen Nitrogen doping Optical pulses Pulsed laser deposition Semiconductor thin films Silicon Sputtering Thin film devices
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