X-Band SiGe-MMIC Low Noise Amplifier Using Low Parasitic Capacitance Via Holes for Emitter Grounding

An X-band SiGe-MMIC single-ended two-stage low noise amplifier (LNA) using low parasitic capacitance via holes for the emitter grounding is described. In order to obtain low impedance emitter/source ground of a silicon based single-ended amplifier, we have developed via holes which can be fabricated...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Nakajima, K., Yoshida, Y., Ueda, H., Nishino, T., Fukumoto, H., Suematsu, N.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Conductivity Epitaxial layers Gain Grounding Impedance Low-noise amplifiers Noise figure Parasitic capacitance Silicon Substrates
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