Novel 3D integration process for highly scalable Nano-Beam stacked-channels GAA (NBG) FinFETs with HfO2/TiN gate stack

Three- and four-level matrices of 15 times 70 nm Si Nano-Beams have been integrated with a novel CMOS gate-all-around process (GAA) down to 80 nm gate length. Thanks to this 3D-GAA extension of a Finfet process, a more than 5times higher current density per layout surface is achieved compared to pla...

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Bibliographische Detailangaben

Hauptverfasser:	Ernst, T., Dupre, C., Isheden, C., Bernard, E., Ritzenthaler, R., Maffini-Alvaro, V., Barbe, J.C., De Crecy, F., Toffoli, A., Vizioz, C., Borel, S., Andrieu, F., Delaye, V., Lafond, D., Rabille, G., Hartmann, J.M., Rivoire, M., Guillaumot, B., Suhm, A., Rivallin, P., Faynot, O., Ghibaudo, G., Deleonibus, S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Charge carrier processes CMOS process Current density Electron beams Electron mobility FinFETs Hafnium oxide Time measurement Tin Transmission line matrix methods
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