Novel 3D integration process for highly scalable Nano-Beam stacked-channels GAA (NBG) FinFETs with HfO2/TiN gate stack
Three- and four-level matrices of 15 times 70 nm Si Nano-Beams have been integrated with a novel CMOS gate-all-around process (GAA) down to 80 nm gate length. Thanks to this 3D-GAA extension of a Finfet process, a more than 5times higher current density per layout surface is achieved compared to pla...
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| creator | Ernst, T. Dupre, C. Isheden, C. Bernard, E. Ritzenthaler, R. Maffini-Alvaro, V. Barbe, J.C. De Crecy, F. Toffoli, A. Vizioz, C. Borel, S. Andrieu, F. Delaye, V. Lafond, D. Rabille, G. Hartmann, J.M. Rivoire, M. Guillaumot, B. Suhm, A. Rivallin, P. Faynot, O. Ghibaudo, G. Deleonibus, S. |
| description | Three- and four-level matrices of 15 times 70 nm Si Nano-Beams have been integrated with a novel CMOS gate-all-around process (GAA) down to 80 nm gate length. Thanks to this 3D-GAA extension of a Finfet process, a more than 5times higher current density per layout surface is achieved compared to planar transistors with the same gate stack (HfO 2 /TiN/Poly-Si). For the first time, several properties of this novel 3D architecture are explored: (i) HfO 2 /TiN gate stack is integrated, (ii) electrons and holes mobilities are measured on 150 beams matrices (3 levels) and compared to those of planar transistors (hi) a sub-100nm channel width is demonstrated and (iv) specific 3D integration challenges like zipping between nano-beams are discussed |
| doi_str_mv | 10.1109/IEDM.2006.346955 |
| format | Conference Proceeding |
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| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0163-1918 |
| ispartof | 2006 International Electron Devices Meeting, 2006, p.1-4 |
| issn | 0163-1918 2156-017X |
| language | eng |
| recordid | cdi_ieee_primary_4154390 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Charge carrier processes CMOS process Current density Electron beams Electron mobility FinFETs Hafnium oxide Time measurement Tin Transmission line matrix methods |
| title | Novel 3D integration process for highly scalable Nano-Beam stacked-channels GAA (NBG) FinFETs with HfO2/TiN gate stack |
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