Suppression of lateral charge redistribution using advanced impurity trap memory for improving high temperature retention

For retention improvement in scaled SONOS-type nonvolatile memory, deep traps with controllable density were formed by adding metal impurities into gate oxide. We find that Ti additives create deep traps in silicon dioxide, with high electron capture efficiency Charge storage node changed from TiO 2...

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Bibliographische Detailangaben

Hauptverfasser:	Sunamura, H., Ikarashi, T., Morioka, A., Kotsuji, S., Oshida, M., Ikarashi, N., Fujieda, S., Watanabe, H.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Additives Dielectrics Electron traps Gold Hafnium Impurities Nonvolatile memory Silicon compounds SONOS devices Temperature
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