GaBi Liquid Metal Alloy Ion Source for the Production of Ions of Interest in Microelectronics Research

In this work a Ga 38 Bi 62 alloy liquid metal ion source has been studied, which allows to implant in the case of a silicon substrate shallow donor ions (Bi) as well as acceptors (Ga) in the sub micron range without changing the source. A detailed analysis of the mass spectra as a function of emissi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Bischoff, L., Pilz, W., Ganetsos, Th, Forbes, R., Akhmadaliev, Ch
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Bismuth Educational technology Inorganic materials Ion beams Ion sources Iron Materials science and technology Microelectronics Physics Production
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