GaBi Liquid Metal Alloy Ion Source for the Production of Ions of Interest in Microelectronics Research

GaBi Liquid Metal Alloy Ion Source for the Production of Ions of Interest in Microelectronics Research

In this work a Ga 38 Bi 62 alloy liquid metal ion source has been studied, which allows to implant in the case of a silicon substrate shallow donor ions (Bi) as well as acceptors (Ga) in the sub micron range without changing the source. A detailed analysis of the mass spectra as a function of emissi...

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Bibliographische Detailangaben
Hauptverfasser: Bischoff, L., Pilz, W., Ganetsos, Th, Forbes, R., Akhmadaliev, Ch
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bismuth
Educational technology
Inorganic materials
Ion beams
Ion sources
Iron
Materials science and technology
Microelectronics
Physics
Production
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Beschreibung
Zusammenfassung:In this work a Ga 38 Bi 62 alloy liquid metal ion source has been studied, which allows to implant in the case of a silicon substrate shallow donor ions (Bi) as well as acceptors (Ga) in the sub micron range without changing the source. A detailed analysis of the mass spectra as a function of emission current, obtained from this source, was used to investigate the mechanism for the production of single and double-charged ions. Moreover, the intensity of cluster ions extracted by the source, as a function of emission current is represented. Theoretical modeling supports the experimental results
ISSN:2164-2370
DOI:10.1109/IVNC.2006.335338