1200-V Low-Loss IGBT Module With Low Noise Characteristics and High I/t Controllability
This paper presents the enhanced characteristics of a newly developed low-loss and low-noise 1200-V insulated gate bipolar transistor (IGBT) module. In order to realize low-noise emission, it is necessary not only to improve the reverse recovery characteristics of the free wheeling diode (FWD) but a...
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| Veröffentlicht in: | IEEE transactions on industry applications 2007-03, Vol.43 (2), p.513-519 |
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| container_title | IEEE transactions on industry applications |
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| creator | Onozawa, Y. Otsuki, M. Iwamuro, N. Miyashita, S. Miyasaka, T. Seki, Y. Matsumoto, T. |
| description | This paper presents the enhanced characteristics of a newly developed low-loss and low-noise 1200-V insulated gate bipolar transistor (IGBT) module. In order to realize low-noise emission, it is necessary not only to improve the reverse recovery characteristics of the free wheeling diode (FWD) but also to reduce the low-current turn-on dI C /dt of the IGBT. The new IGBTs with high turn-on dI C /dt controllability and low turn-on power dissipation have been successfully developed by the reduction of Miller capacitance resulting from an optimization of the surface. The 1200-V 450-A IGBT module utilizing the new IGBT and optimized FWD chips has been able to realize 30% reduction of the switching power dissipation when compared to the conventional IGBT module under the operating condition to set the same noise emission level |
| doi_str_mv | 10.1109/TIA.2006.890024 |
| format | Article |
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In order to realize low-noise emission, it is necessary not only to improve the reverse recovery characteristics of the free wheeling diode (FWD) but also to reduce the low-current turn-on dI C /dt of the IGBT. The new IGBTs with high turn-on dI C /dt controllability and low turn-on power dissipation have been successfully developed by the reduction of Miller capacitance resulting from an optimization of the surface. The 1200-V 450-A IGBT module utilizing the new IGBT and optimized FWD chips has been able to realize 30% reduction of the switching power dissipation when compared to the conventional IGBT module under the operating condition to set the same noise emission level</description><identifier>ISSN: 0093-9994</identifier><identifier>EISSN: 1939-9367</identifier><identifier>DOI: 10.1109/TIA.2006.890024</identifier><identifier>CODEN: ITIACR</identifier><language>eng</language><publisher>IEEE</publisher><subject>Capacitance ; Controllability ; Diodes ; Electric variables ; Electromagnetic interference ; Electromagnetic interference (EMI) noise ; Industry Applications Society ; Insulated gate bipolar transistors ; Miller capacitance ; Noise level ; Noise reduction ; Power dissipation ; reverse-recovery {d}V/{d}t ; turn-on {d}i/{d}t controllability</subject><ispartof>IEEE transactions on industry applications, 2007-03, Vol.43 (2), p.513-519</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1064-667221192a60f4046d91c2fd2ed5959783ba49e632bb2ad885cbac70281f8f723</citedby><cites>FETCH-LOGICAL-c1064-667221192a60f4046d91c2fd2ed5959783ba49e632bb2ad885cbac70281f8f723</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4132884$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54737</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4132884$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Onozawa, Y.</creatorcontrib><creatorcontrib>Otsuki, M.</creatorcontrib><creatorcontrib>Iwamuro, N.</creatorcontrib><creatorcontrib>Miyashita, S.</creatorcontrib><creatorcontrib>Miyasaka, T.</creatorcontrib><creatorcontrib>Seki, Y.</creatorcontrib><creatorcontrib>Matsumoto, T.</creatorcontrib><title>1200-V Low-Loss IGBT Module With Low Noise Characteristics and High I/t Controllability</title><title>IEEE transactions on industry applications</title><addtitle>TIA</addtitle><description>This paper presents the enhanced characteristics of a newly developed low-loss and low-noise 1200-V insulated gate bipolar transistor (IGBT) module. In order to realize low-noise emission, it is necessary not only to improve the reverse recovery characteristics of the free wheeling diode (FWD) but also to reduce the low-current turn-on dI C /dt of the IGBT. The new IGBTs with high turn-on dI C /dt controllability and low turn-on power dissipation have been successfully developed by the reduction of Miller capacitance resulting from an optimization of the surface. The 1200-V 450-A IGBT module utilizing the new IGBT and optimized FWD chips has been able to realize 30% reduction of the switching power dissipation when compared to the conventional IGBT module under the operating condition to set the same noise emission level</description><subject>Capacitance</subject><subject>Controllability</subject><subject>Diodes</subject><subject>Electric variables</subject><subject>Electromagnetic interference</subject><subject>Electromagnetic interference (EMI) noise</subject><subject>Industry Applications Society</subject><subject>Insulated gate bipolar transistors</subject><subject>Miller capacitance</subject><subject>Noise level</subject><subject>Noise reduction</subject><subject>Power dissipation</subject><subject>reverse-recovery {d}V/{d}t</subject><subject>turn-on {d}i/{d}t controllability</subject><issn>0093-9994</issn><issn>1939-9367</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kD1PwzAURS0EEqUwM7D4D7h9_ojjN5YI2kgBlkDHyEkcahQaZAeh_ntSFTG94b5zdXUIueWw4BxwWearhQDQC4MAQp2RGUeJDKVOz8kMACVDRHVJrmL8AOAq4WpGtnxi2Bsthh9WDDHSfH1f0qeh_e4d3fpxd0zo8-Cjo9nOBtuMLvg4-iZSu2_pxr_vaL4caTbsxzD0va1978fDNbnobB_dzd-dk9fHhzLbsOJlnWergjUctGJap0JwjsJq6BQo3SJvRNcK1yaYYGpkbRU6LUVdC9sakzS1bVIQhnemS4Wck-WptwnT-uC66iv4TxsOFYfq6KWavFRHL9XJy0TcnQjvnPv_VlwKY5T8Bd9wXAg</recordid><startdate>200703</startdate><enddate>200703</enddate><creator>Onozawa, Y.</creator><creator>Otsuki, M.</creator><creator>Iwamuro, N.</creator><creator>Miyashita, S.</creator><creator>Miyasaka, T.</creator><creator>Seki, Y.</creator><creator>Matsumoto, T.</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>200703</creationdate><title>1200-V Low-Loss IGBT Module With Low Noise Characteristics and High I/t Controllability</title><author>Onozawa, Y. ; Otsuki, M. ; Iwamuro, N. ; Miyashita, S. ; Miyasaka, T. ; Seki, Y. ; Matsumoto, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1064-667221192a60f4046d91c2fd2ed5959783ba49e632bb2ad885cbac70281f8f723</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Capacitance</topic><topic>Controllability</topic><topic>Diodes</topic><topic>Electric variables</topic><topic>Electromagnetic interference</topic><topic>Electromagnetic interference (EMI) noise</topic><topic>Industry Applications Society</topic><topic>Insulated gate bipolar transistors</topic><topic>Miller capacitance</topic><topic>Noise level</topic><topic>Noise reduction</topic><topic>Power dissipation</topic><topic>reverse-recovery {d}V/{d}t</topic><topic>turn-on {d}i/{d}t controllability</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Onozawa, Y.</creatorcontrib><creatorcontrib>Otsuki, M.</creatorcontrib><creatorcontrib>Iwamuro, N.</creatorcontrib><creatorcontrib>Miyashita, S.</creatorcontrib><creatorcontrib>Miyasaka, T.</creatorcontrib><creatorcontrib>Seki, Y.</creatorcontrib><creatorcontrib>Matsumoto, T.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE transactions on industry applications</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Onozawa, Y.</au><au>Otsuki, M.</au><au>Iwamuro, N.</au><au>Miyashita, S.</au><au>Miyasaka, T.</au><au>Seki, Y.</au><au>Matsumoto, T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>1200-V Low-Loss IGBT Module With Low Noise Characteristics and High I/t Controllability</atitle><jtitle>IEEE transactions on industry applications</jtitle><stitle>TIA</stitle><date>2007-03</date><risdate>2007</risdate><volume>43</volume><issue>2</issue><spage>513</spage><epage>519</epage><pages>513-519</pages><issn>0093-9994</issn><eissn>1939-9367</eissn><coden>ITIACR</coden><abstract>This paper presents the enhanced characteristics of a newly developed low-loss and low-noise 1200-V insulated gate bipolar transistor (IGBT) module. In order to realize low-noise emission, it is necessary not only to improve the reverse recovery characteristics of the free wheeling diode (FWD) but also to reduce the low-current turn-on dI C /dt of the IGBT. The new IGBTs with high turn-on dI C /dt controllability and low turn-on power dissipation have been successfully developed by the reduction of Miller capacitance resulting from an optimization of the surface. The 1200-V 450-A IGBT module utilizing the new IGBT and optimized FWD chips has been able to realize 30% reduction of the switching power dissipation when compared to the conventional IGBT module under the operating condition to set the same noise emission level</abstract><pub>IEEE</pub><doi>10.1109/TIA.2006.890024</doi><tpages>7</tpages></addata></record> |
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| subjects | Capacitance Controllability Diodes Electric variables Electromagnetic interference Electromagnetic interference (EMI) noise Industry Applications Society Insulated gate bipolar transistors Miller capacitance Noise level Noise reduction Power dissipation reverse-recovery {d}V/{d}t turn-on {d}i/{d}t controllability |
| title | 1200-V Low-Loss IGBT Module With Low Noise Characteristics and High I/t Controllability |
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