1/f Noise Characterization in CMOS Transistors in 0.13μm Technology
Low-frequency noise has been studied on a set of n- and p-channel CMOS transistors fabricated in a 0.13μm technology. Noise measurements have been performed on transistors with different gate lengths operating under wide bias conditions, ranging from weak to strong inversion. Noise origin has been i...
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| creator | Citakovic, J. Stenberg, L.J. Andreani, P. |
| description | Low-frequency noise has been studied on a set of n- and p-channel CMOS transistors fabricated in a 0.13μm technology. Noise measurements have been performed on transistors with different gate lengths operating under wide bias conditions, ranging from weak to strong inversion. Noise origin has been identified for both type of devices, and the oxide trap density N t , the Hooge parameter α H and the Coulomb scattering parameter α s have been extracted. The experimental results are compared with simulations using the BSIM3v3 MOS model. |
| doi_str_mv | 10.1109/NORCHP.2006.329249 |
| format | Conference Proceeding |
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Noise measurements have been performed on transistors with different gate lengths operating under wide bias conditions, ranging from weak to strong inversion. Noise origin has been identified for both type of devices, and the oxide trap density N t , the Hooge parameter α H and the Coulomb scattering parameter α s have been extracted. The experimental results are compared with simulations using the BSIM3v3 MOS model.</description><identifier>ISBN: 1424407729</identifier><identifier>ISBN: 9781424407729</identifier><identifier>DOI: 10.1109/NORCHP.2006.329249</identifier><language>eng</language><publisher>IEEE</publisher><subject>Circuit noise ; CMOS technology ; Fluctuations ; Low-frequency noise ; MOSFETs ; Noise measurement ; Performance evaluation ; Scattering parameters ; Semiconductor device noise ; Voltage</subject><ispartof>2006 NORCHIP, 2006, p.81-84</ispartof><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4126952$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4126952$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Citakovic, J.</creatorcontrib><creatorcontrib>Stenberg, L.J.</creatorcontrib><creatorcontrib>Andreani, P.</creatorcontrib><title>1/f Noise Characterization in CMOS Transistors in 0.13μm Technology</title><title>2006 NORCHIP</title><addtitle>NORCHP</addtitle><description>Low-frequency noise has been studied on a set of n- and p-channel CMOS transistors fabricated in a 0.13μm technology. Noise measurements have been performed on transistors with different gate lengths operating under wide bias conditions, ranging from weak to strong inversion. Noise origin has been identified for both type of devices, and the oxide trap density N t , the Hooge parameter α H and the Coulomb scattering parameter α s have been extracted. The experimental results are compared with simulations using the BSIM3v3 MOS model.</description><subject>Circuit noise</subject><subject>CMOS technology</subject><subject>Fluctuations</subject><subject>Low-frequency noise</subject><subject>MOSFETs</subject><subject>Noise measurement</subject><subject>Performance evaluation</subject><subject>Scattering parameters</subject><subject>Semiconductor device noise</subject><subject>Voltage</subject><isbn>1424407729</isbn><isbn>9781424407729</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotjUtOwzAURS0hJKB0AzDxBpL6Pf_iIQqfIpUGQRhXjutQozZGdiZlbayha6II7uRIZ3AuIVfASgBmZsvmpZ4_l8iYKjkaFOaEXIBAIZjWaM7INOcPdhw3Uit5Tm5h1tNlDNnTemOTdaNP4cuOIQ40DLR-al5pm-yQQx5jyr_ueMUP3zvaercZ4ja-7y_JaW-32U__OSFv93dtPS8WzcNjfbMoAmg5Fth3TjrtEWylJTc914pp6ICDNUozBx4rYZWWbu0qv7aqQs95xxxTnUTLJ-T6rxu896vPFHY27VcCUBmJ_Af04Eh5</recordid><startdate>200611</startdate><enddate>200611</enddate><creator>Citakovic, J.</creator><creator>Stenberg, L.J.</creator><creator>Andreani, P.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200611</creationdate><title>1/f Noise Characterization in CMOS Transistors in 0.13μm Technology</title><author>Citakovic, J. ; Stenberg, L.J. ; Andreani, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-2fbc5c7e21a87539f376071b131a9670c1e284a675cdc8eda682e33b0c06b52a3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Circuit noise</topic><topic>CMOS technology</topic><topic>Fluctuations</topic><topic>Low-frequency noise</topic><topic>MOSFETs</topic><topic>Noise measurement</topic><topic>Performance evaluation</topic><topic>Scattering parameters</topic><topic>Semiconductor device noise</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Citakovic, J.</creatorcontrib><creatorcontrib>Stenberg, L.J.</creatorcontrib><creatorcontrib>Andreani, P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Citakovic, J.</au><au>Stenberg, L.J.</au><au>Andreani, P.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>1/f Noise Characterization in CMOS Transistors in 0.13μm Technology</atitle><btitle>2006 NORCHIP</btitle><stitle>NORCHP</stitle><date>2006-11</date><risdate>2006</risdate><spage>81</spage><epage>84</epage><pages>81-84</pages><isbn>1424407729</isbn><isbn>9781424407729</isbn><abstract>Low-frequency noise has been studied on a set of n- and p-channel CMOS transistors fabricated in a 0.13μm technology. Noise measurements have been performed on transistors with different gate lengths operating under wide bias conditions, ranging from weak to strong inversion. Noise origin has been identified for both type of devices, and the oxide trap density N t , the Hooge parameter α H and the Coulomb scattering parameter α s have been extracted. The experimental results are compared with simulations using the BSIM3v3 MOS model.</abstract><pub>IEEE</pub><doi>10.1109/NORCHP.2006.329249</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Circuit noise CMOS technology Fluctuations Low-frequency noise MOSFETs Noise measurement Performance evaluation Scattering parameters Semiconductor device noise Voltage |
| title | 1/f Noise Characterization in CMOS Transistors in 0.13μm Technology |
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