High Performance, Low Complexity Vertical PNP BJT Optimization for a 0.24 μm SiGe BiCMOS Technology

An isolated vertical PNP BJT with f T of 28 GHz and f MAX of 26 GHz available as a modular component in a 0.24 μm SiGe BiCMOS technology is described. This paper presents, to the authors' knowledge, the highest f T ever published for a homojunction PNP device, as well as for a modular PNP in a...

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Hauptverfasser:	Voegeli, B., Gray, P., Dahlstrom, M., Feilchenfeld, N., Rainey, B., Previti-Kelly, R., St Onge, S., Joseph, A., Dunn, J.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	BiCMOS integrated circuits CMOS process CMOS technology Fabrication Germanium silicon alloys Heterojunction bipolar transistors Implants Isolation technology Silicon carbide Silicon germanium
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Zusammenfassung:	An isolated vertical PNP BJT with f T of 28 GHz and f MAX of 26 GHz available as a modular component in a 0.24 μm SiGe BiCMOS technology is described. This paper presents, to the authors' knowledge, the highest f T ever published for a homojunction PNP device, as well as for a modular PNP in a BiCMOS technology. The VPNP device is fabricated using a low complexity integration scheme and is optimized to complement the high breakdown SiGe NPN HBT
DOI:	10.1109/SMIC.2007.322774