InGaP-Plus - A major advance in GaAs HBT Technology

InGaP-Plus, a manufacturable GaAs BiFET process has been developed at ANADIGICS for high volume production of ICs for the wireless and broadband businesses. The epitaxial structure is such that the HBT and pHEMT devices can be optimized independently, without compromise, for the application at hand....

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Bibliographische Detailangaben
Hauptverfasser:	Gupta, A., Peatman, B., Shokrani, M., Krystek, W., Arell, T.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	BiCMOS BiCMOS integrated circuits BiFET Cost function device integration FET FETs GaAs Gallium arsenide HBT Heterojunction bipolar transistors High power amplifiers InGaP Low-noise amplifiers manufacturable Manufacturing processes pHEMT PHEMTs Switches
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