Multi-Gate MOSFET Design
In this paper, circuit design issues of emerging multi-gate field effect transistors (MuGFET) are discussed with special emphasis on the link between circuit design and technology. The influence of novel midgap gate electrode materials on digital circuits is presented and examples of the first basic...
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| creator | Knoblinger, G. Pacha, C. Kuttner, F. Marshall, A. Russ, C. Haibach, P. Patruno, P. Schulz, T. Arnim, K.V. Engelstaedter, J.P. Bertolissi, L. Xiong, W. Cleavelin, C.R. Schruefer, K. |
| description | In this paper, circuit design issues of emerging multi-gate field effect transistors (MuGFET) are discussed with special emphasis on the link between circuit design and technology. The influence of novel midgap gate electrode materials on digital circuits is presented and examples of the first basic analog building blocks realized with these advanced devices are shown. Furthermore the influence of new device specific effects on analog circuits, like self heating or output conductance improvement due to undoped body are discussed and RF and ESD issues are covered |
| doi_str_mv | 10.1109/ESSCIR.2006.307532 |
| format | Conference Proceeding |
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Furthermore the influence of new device specific effects on analog circuits, like self heating or output conductance improvement due to undoped body are discussed and RF and ESD issues are covered</description><subject>Analog circuits</subject><subject>Circuit synthesis</subject><subject>Conducting materials</subject><subject>Digital circuits</subject><subject>Electrodes</subject><subject>Electrostatic discharge</subject><subject>FETs</subject><subject>Heating</subject><subject>MOSFET circuits</subject><subject>Radio frequency</subject><issn>1930-8833</issn><issn>2643-1319</issn><isbn>9781424403035</isbn><isbn>1424403022</isbn><isbn>9781424403028</isbn><isbn>1424403030</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotjElLw0AYQAcXMNTcRS_9AxO_ZdajxFoLLQXTe5nMIpEq0sSD_96CPb3Dezwh7hEaRPCPi65rV28NAZiGwWqmC1GRUSyR0V-K2luHipQCBtZXokLPIJ1jvhH1OH4AAFqj0OtK3G1-DtMgl2HK8822e1ns5s95HN6_bsV1CYcx12fOxO4k21e53i5X7dNaDmj1JK13gRyoSIQxqUKUOFJS2rreYO6jK-UUxFS0cQwxBI6IqdeKNRLyTDz8b4ec8_77OHyG4-9egfcWNP8BLk479w</recordid><startdate>200609</startdate><enddate>200609</enddate><creator>Knoblinger, G.</creator><creator>Pacha, C.</creator><creator>Kuttner, F.</creator><creator>Marshall, A.</creator><creator>Russ, C.</creator><creator>Haibach, P.</creator><creator>Patruno, P.</creator><creator>Schulz, T.</creator><creator>Arnim, K.V.</creator><creator>Engelstaedter, J.P.</creator><creator>Bertolissi, L.</creator><creator>Xiong, W.</creator><creator>Cleavelin, C.R.</creator><creator>Schruefer, K.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200609</creationdate><title>Multi-Gate MOSFET Design</title><author>Knoblinger, G. ; Pacha, C. ; Kuttner, F. ; Marshall, A. ; Russ, C. ; Haibach, P. ; Patruno, P. ; Schulz, T. ; Arnim, K.V. ; Engelstaedter, J.P. ; Bertolissi, L. ; Xiong, W. ; Cleavelin, C.R. ; Schruefer, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-798a2804c221cd4f22d3c2d4578b61ebc8ffa28cdf56830caa3c11db54351213</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Analog circuits</topic><topic>Circuit synthesis</topic><topic>Conducting materials</topic><topic>Digital circuits</topic><topic>Electrodes</topic><topic>Electrostatic discharge</topic><topic>FETs</topic><topic>Heating</topic><topic>MOSFET circuits</topic><topic>Radio frequency</topic><toplevel>online_resources</toplevel><creatorcontrib>Knoblinger, G.</creatorcontrib><creatorcontrib>Pacha, C.</creatorcontrib><creatorcontrib>Kuttner, F.</creatorcontrib><creatorcontrib>Marshall, A.</creatorcontrib><creatorcontrib>Russ, C.</creatorcontrib><creatorcontrib>Haibach, P.</creatorcontrib><creatorcontrib>Patruno, P.</creatorcontrib><creatorcontrib>Schulz, T.</creatorcontrib><creatorcontrib>Arnim, K.V.</creatorcontrib><creatorcontrib>Engelstaedter, J.P.</creatorcontrib><creatorcontrib>Bertolissi, L.</creatorcontrib><creatorcontrib>Xiong, W.</creatorcontrib><creatorcontrib>Cleavelin, C.R.</creatorcontrib><creatorcontrib>Schruefer, K.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Knoblinger, G.</au><au>Pacha, C.</au><au>Kuttner, F.</au><au>Marshall, A.</au><au>Russ, C.</au><au>Haibach, P.</au><au>Patruno, P.</au><au>Schulz, T.</au><au>Arnim, K.V.</au><au>Engelstaedter, J.P.</au><au>Bertolissi, L.</au><au>Xiong, W.</au><au>Cleavelin, C.R.</au><au>Schruefer, K.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Multi-Gate MOSFET Design</atitle><btitle>2006 Proceedings of the 32nd European Solid-State Circuits Conference</btitle><stitle>ESSCIR</stitle><date>2006-09</date><risdate>2006</risdate><spage>66</spage><epage>69</epage><pages>66-69</pages><issn>1930-8833</issn><eissn>2643-1319</eissn><isbn>9781424403035</isbn><isbn>1424403022</isbn><isbn>9781424403028</isbn><isbn>1424403030</isbn><abstract>In this paper, circuit design issues of emerging multi-gate field effect transistors (MuGFET) are discussed with special emphasis on the link between circuit design and technology. The influence of novel midgap gate electrode materials on digital circuits is presented and examples of the first basic analog building blocks realized with these advanced devices are shown. Furthermore the influence of new device specific effects on analog circuits, like self heating or output conductance improvement due to undoped body are discussed and RF and ESD issues are covered</abstract><pub>IEEE</pub><doi>10.1109/ESSCIR.2006.307532</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 1930-8833 |
| ispartof | 2006 Proceedings of the 32nd European Solid-State Circuits Conference, 2006, p.66-69 |
| issn | 1930-8833 2643-1319 |
| language | eng |
| recordid | cdi_ieee_primary_4099705 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Analog circuits Circuit synthesis Conducting materials Digital circuits Electrodes Electrostatic discharge FETs Heating MOSFET circuits Radio frequency |
| title | Multi-Gate MOSFET Design |
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