On the giant optical anisotropy observed in M-plane GaN/AlGaN quantum wells by crystal-field effect

Optical polarizations of GaN/AlGaN wurtzite quantum wells in various orientations are studied using an arbitrarily-oriented [hkil] Hamiltonian potential matrix. The optical matrix elements in the wurtzite quantum wells are calculated using the k-p finite difference scheme. The results reveal the pre...

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Hauptverfasser: Chen, C.N., Yarn, K.F., Chang, S.H., Hung, M.L.
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description Optical polarizations of GaN/AlGaN wurtzite quantum wells in various orientations are studied using an arbitrarily-oriented [hkil] Hamiltonian potential matrix. The optical matrix elements in the wurtzite quantum wells are calculated using the k-p finite difference scheme. The results reveal the presence of giant in-plane optical anisotropy (polarized normal to [0001]) in the M-plane (i.e. the (10 1macr 0)-oriented layer plane) GaN/Al 0.2 Ga 0.8 N quantum well due to the positive crystal-field split energy effect (DeltaCR > 0). Presented theoretical results are consistent with the photoluminescence measurements presented in the literature
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subjects Aluminum gallium nitride
Anisotropic magnetoresistance
Chromium
Educational institutions
Finite difference methods
Gallium nitride
Geometrical optics
Lattices
Optical polarization
Physics
title On the giant optical anisotropy observed in M-plane GaN/AlGaN quantum wells by crystal-field effect
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