A Zinc Oxide modified Porous Silicon humidity sensor

In this paper, a relative humidity sensor based on zinc oxide modified porous silicon was discussed. The porous silicon was prepared by electrochemical etching process first. Then the sol-gel precursor of Zinc Oxide was applied to the PS substrates and annealed at 450 degC. By this technique, it is...

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Hauptverfasser:	Tao Jiang, Xiaofeng Zhou, Jian Zhang, Yanling Shi, Tianxing Luo
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing Conductivity measurement Delay Electric variables measurement Etching Humidity measurement humidity sensor modified Porous Silicon Semiconductor films Silicon sol-gel Substrates Zinc oxide
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creator	Tao Jiang Xiaofeng Zhou Jian Zhang Yanling Shi Tianxing Luo
description	In this paper, a relative humidity sensor based on zinc oxide modified porous silicon was discussed. The porous silicon was prepared by electrochemical etching process first. Then the sol-gel precursor of Zinc Oxide was applied to the PS substrates and annealed at 450 degC. By this technique, it is possible to obtain a uniform zinc oxide film on the porous silicon substrates. The electrical conductivities of the porous silicon and zinc oxide/porous silicon structures under different humidity levels were measured. It is indicated that the modification of the porous silicon by sol-gel zinc oxide increase the sensitivity and shorten the response time to the relative humidity
doi_str_mv	10.1109/ICIA.2006.305909
format	Conference Proceeding
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It is indicated that the modification of the porous silicon by sol-gel zinc oxide increase the sensitivity and shorten the response time to the relative humidity</description><subject>Annealing</subject><subject>Conductivity measurement</subject><subject>Delay</subject><subject>Electric variables measurement</subject><subject>Etching</subject><subject>Humidity measurement</subject><subject>humidity sensor</subject><subject>modified Porous Silicon</subject><subject>Semiconductor films</subject><subject>Silicon</subject><subject>sol-gel</subject><subject>Substrates</subject><subject>Zinc oxide</subject><isbn>9781424405282</isbn><isbn>1424405289</isbn><isbn>1424405297</isbn><isbn>9781424405299</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1j8FKxDAURSMiqGP3gpv8QOt7ycukWZaiTmFgBHXjZkjbBJ9MW2lmwPl7B9S7OZzNgSvELUKBCO6-qZuqUADLQoNx4M7ENZIiAqOcPReZs-W_l-pSZCl9wmnaGVTLK0GVfOexk5tv7oMcpp4jh14-T_N0SPKFd9xNo_w4DNzz_ihTGNM034iL6HcpZH9ciLfHh9d6la83T01drXNGa_Y5tUCaPEaNykcdnW6RXAsxxtZ2sSs9eAQEMB1hsD1iaZGotQbAKev1Qtz9djmEsP2aefDzcUtw-kRK_wANBUSw</recordid><startdate>200608</startdate><enddate>200608</enddate><creator>Tao Jiang</creator><creator>Xiaofeng Zhou</creator><creator>Jian Zhang</creator><creator>Yanling Shi</creator><creator>Tianxing Luo</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200608</creationdate><title>A Zinc Oxide modified Porous Silicon humidity sensor</title><author>Tao Jiang ; Xiaofeng Zhou ; Jian Zhang ; Yanling Shi ; Tianxing Luo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-4b0434a1f312af3f93b149b0fffb7cfc8a0a101005c41e7d1187144b7500927a3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Annealing</topic><topic>Conductivity measurement</topic><topic>Delay</topic><topic>Electric variables measurement</topic><topic>Etching</topic><topic>Humidity measurement</topic><topic>humidity sensor</topic><topic>modified Porous Silicon</topic><topic>Semiconductor films</topic><topic>Silicon</topic><topic>sol-gel</topic><topic>Substrates</topic><topic>Zinc oxide</topic><toplevel>online_resources</toplevel><creatorcontrib>Tao Jiang</creatorcontrib><creatorcontrib>Xiaofeng Zhou</creatorcontrib><creatorcontrib>Jian Zhang</creatorcontrib><creatorcontrib>Yanling Shi</creatorcontrib><creatorcontrib>Tianxing Luo</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tao Jiang</au><au>Xiaofeng Zhou</au><au>Jian Zhang</au><au>Yanling Shi</au><au>Tianxing Luo</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A Zinc Oxide modified Porous Silicon humidity sensor</atitle><btitle>2006 IEEE International Conference on Information Acquisition</btitle><stitle>ICIA</stitle><date>2006-08</date><risdate>2006</risdate><spage>1158</spage><epage>1162</epage><pages>1158-1162</pages><isbn>9781424405282</isbn><isbn>1424405289</isbn><eisbn>1424405297</eisbn><eisbn>9781424405299</eisbn><abstract>In this paper, a relative humidity sensor based on zinc oxide modified porous silicon was discussed. 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identifier	ISBN: 9781424405282
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source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Annealing Conductivity measurement Delay Electric variables measurement Etching Humidity measurement humidity sensor modified Porous Silicon Semiconductor films Silicon sol-gel Substrates Zinc oxide
title	A Zinc Oxide modified Porous Silicon humidity sensor
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