Novel Single Polysilicon EEPROM Cell With Dual Work Function Floating Gate

A novel single polysilicon electrically erasable programmable read-only memory cell with dual work function floating-gate (DWFG) structure is presented in this letter. The floating gate of the proposed DWFG cell is doped with p+ on the source side and n+ on the drain side. For DWFG devices, the floa...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE electron device letters 2007-02, Vol.28 (2), p.151-153
Hauptverfasser:	NA, Kee-Yeol, KIM, Yeong-Seuk
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Channel hot electron (CHE) programming Channel hot electron injection Channels Current measurement Design. Technologies. Operation analysis. Testing Devices Drains dual work function floating gate (DWFG) Electric potential Electronics EPROM Exact sciences and technology Floating structures Functional programming Gates high programming speed Integrated circuits Integrated circuits by function (including memories and processors) Logic programming Nonvolatile memory Programming Programming profession PROM Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicides single polysilicon electrically erasable programmable read-only memory (EEPROM) standard logic process Voltage Work functions
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!